Infineon Technologies Products - Transistors - FETs, MOSFETs - Arrays

SIC 2N-CH 1200V AG-EASY1B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
• Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 40mA
• Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

LOW POWER EASY

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 170A
• Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
• Power - Max: 20mW
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

MOSFET 2N-CH 1200V 25A

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 25A
• Rds On (Max) @ Id, Vgs: 32.3mOhm @ 25A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

MOSFET 2N-CH 20V 10A 8SO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET 2N-CH 40V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 22µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
• Power - Max: 54W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

SIC 2N-CH 2000V AG-62MMHB

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 2000V (2kV)
• Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
• Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MMHB

MOSFET 2N-CH 30V 6.7A WISON-8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8.5A (Ta)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V, 7.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 15V, 900pF @ 15V
• Power - Max: 700mW (Ta), 860mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-WISON-8

SIC 4N-CH 1200V AG-EASY3B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
• Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 224mA
• Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY3B

MOSFET 2N-CH 20V 4.5A PQFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
• Power - Max: 1.5W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-PowerVDFN
• Supplier Device Package: 6-PQFN Dual (2x2)

MOSFET 2N-CH 40V 65A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
• Power - Max: 3.8W (Ta), 50W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

MOSFET 2N-CH 30V 13A/28A PQFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A, 28A
• Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
• Power - Max: 2.4W, 3.4W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 18-PowerVQFN
• Supplier Device Package: PQFN (5x6)

MOSFET 2N-CH 60V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 28µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
• Power - Max: 65W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

MOSFET 2P-CH 30V 3.6A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.6A
• Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

SIC 2N-CH 1200V AG-62MMHB

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
• Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
• Vgs(th) (Max) @ Id: 5.15V @ 224mA
• Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MMHB

SIC 1200V AG-EASY1B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B

MOSFET N-CH

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

MOSFET 2N-CH 30V 4.8A WISON-8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V
• Power - Max: 700mW (Ta), 860mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-WISON-8

MOSFET 2P-CH 30V 4.9A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A
• Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

SIC 2N-CH 1200V 45A AG-EASY1B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 45A
• Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B

MOSFET 2N-CH 60V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
• Power - Max: 50W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

MOSFET

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

SIC 6N-CH 1200V 62.5A

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc)
• Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 28mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

MOSFET 2N-CH 40V 60A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id: 3V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
• Power - Max: 52W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-57

SIC 2N-CH 1200V AG-EASY2BM-2

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
• Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
• Vgs(th) (Max) @ Id: 5.55V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2BM-2