Page 103 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IPA50R140CP
Infineon Technologies

MOSFET N-CH 500V 23A TO220-3

Package: TO-220-3 Full Pack

Stock53,868
IRFS7730PBF
Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,496
IPW60R160C6
Infineon Technologies

MOSFET N-CH 600V 23.8A TO247

Package: TO-247-3

Stock6,592
IRFS7534-7PPBF
Infineon Technologies

MOSFET N CH 60V 240A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock7,116
IRFB3006PBF
Infineon Technologies

MOSFET N-CH 60V 195A TO-220AB

Package: TO-220-3

Stock219,084
SPW15N60C3
Infineon Technologies

MOSFET N-CH 650V 15A TO-247

Package: TO-247-3

Stock121,836
AUIRF2907Z
Infineon Technologies

MOSFET N-CH 75V 75A TO220AB

Package: TO-220-3

Stock17,076
IRFB4110GPBF
Infineon Technologies

MOSFET N-CH 100V 120A TO220AB

Package: TO-220-3

Stock6,544
IRFI4110GPBF
Infineon Technologies

MOSFET N-CH 100V 72A TO220AB

Package: TO-220-3 Full Pack

Stock17,118
SPW11N60C3
Infineon Technologies

MOSFET N-CH 650V 11A TO-247

Package: TO-247-3

Stock99,624
IPP60R199CPXKSA1
Infineon Technologies

MOSFET N-CH 650V 16A TO220-3

Package: TO-220-3

Stock8,196
IPA60R199CPXKSA1
Infineon Technologies

MOSFET N-CH 650V 16A TO220-3

Package: TO-220-3 Full Pack

Stock20,598
IPW60R190E6
Infineon Technologies

MOSFET N-CH 600V 20.2A TO247

Package: TO-247-3

Stock6,684
IPA60R160C6
Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-FP

Package: TO-220-3 Full Pack

Stock20,928
IPP60R160C6
Infineon Technologies

MOSFET N-CH 600V 23.8A TO220

Package: TO-220-3

Stock37,932
SPP15N60C3XKSA1
Infineon Technologies

MOSFET N-CH 650V 15A TO-220

Package: TO-220-3

Stock6,456
IRFS7534PBF
Infineon Technologies

MOSFET N CH 60V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,520
IRF2804SPBF
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock117,264
IRFI3306GPBF
Infineon Technologies

MOSFET N-CH 60V 71A TO220

Package: TO-220-3 Full Pack

Stock6,672
IRFB3006GPBF
Infineon Technologies

MOSFET N-CH 60V 195A TO220AB

Package: TO-220-3

Stock6,768

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPA50R140CP	Infineon Technologies	MOSFET N-CH 500V 23A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock53,868	MOSFET (Metal Oxide)	500V	23A (Tc)	10V	3.5V @ 930µA	64nC @ 10V	2540pF @ 100V	±20V	-	34W (Tc)	140 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRFS7730PBF	Infineon Technologies	MOSFET N-CH 75V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,496	MOSFET (Metal Oxide)	75V	195A (Tc)	6V, 10V	3.7V @ 250µA	407nC @ 10V	13660pF @ 25V	±20V	-	375W (Tc)	2.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPW60R160C6	Infineon Technologies	MOSFET N-CH 600V 23.8A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,592	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	3.5V @ 750µA	75nC @ 10V	1660pF @ 100V	±20V	-	176W (Tc)	160 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRFS7534-7PPBF	Infineon Technologies	MOSFET N CH 60V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,116	MOSFET (Metal Oxide)	60V	240A (Tc)	6V, 10V	3.7V @ 250µA	300nC @ 10V	9990pF @ 25V	±20V	-	290W (Tc)	1.95 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
IRFB3006PBF	Infineon Technologies	MOSFET N-CH 60V 195A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock219,084	MOSFET (Metal Oxide)	60V	195A (Tc)	10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	±20V	-	375W (Tc)	2.5 mOhm @ 170A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPW15N60C3	Infineon Technologies	MOSFET N-CH 650V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock121,836	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	3.9V @ 675µA	63nC @ 10V	1660pF @ 25V	±20V	-	156W (Tc)	280 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AUIRF2907Z	Infineon Technologies	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,076	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 250µA	270nC @ 10V	7500pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB4110GPBF	Infineon Technologies	MOSFET N-CH 100V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,544	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 250µA	210nC @ 10V	9620pF @ 50V	±20V	-	370W (Tc)	4.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFI4110GPBF	Infineon Technologies	MOSFET N-CH 100V 72A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,118	MOSFET (Metal Oxide)	100V	72A (Tc)	10V	4V @ 250µA	290nC @ 10V	9540pF @ 50V	±20V	-	61W (Tc)	4.5 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
SPW11N60C3	Infineon Technologies	MOSFET N-CH 650V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock99,624	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	3.9V @ 500µA	60nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPP60R199CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 16A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock8,196	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	3.5V @ 660µA	43nC @ 10V	1520pF @ 100V	±20V	-	139W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA60R199CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 16A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,598	MOSFET (Metal Oxide)	650V	16A (Tc)	10V	3.5V @ 1.1mA	43nC @ 10V	1520pF @ 100V	±20V	-	34W (Tc)	199 mOhm @ 9.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPW60R190E6	Infineon Technologies	MOSFET N-CH 600V 20.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,684	MOSFET (Metal Oxide)	600V	20.2A (Tc)	10V	3.5V @ 630µA	63nC @ 10V	1400pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPA60R160C6	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,928	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	3.5V @ 750µA	75nC @ 10V	1660pF @ 100V	±20V	-	34W (Tc)	160 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPP60R160C6	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock37,932	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	3.5V @ 750µA	75nC @ 10V	1660pF @ 100V	±20V	-	176W (Tc)	160 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
SPP15N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 15A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,456	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	3.9V @ 675µA	63nC @ 10V	1660pF @ 25V	±20V	-	156W (Tc)	280 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFS7534PBF	Infineon Technologies	MOSFET N CH 60V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,520	MOSFET (Metal Oxide)	60V	195A (Tc)	6V, 10V	3.7V @ 250µA	279nC @ 10V	10034pF @ 25V	±20V	-	294W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2804SPBF	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock117,264	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	240nC @ 10V	6450pF @ 25V	±20V	-	300W (Tc)	2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFI3306GPBF	Infineon Technologies	MOSFET N-CH 60V 71A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,672	MOSFET (Metal Oxide)	60V	71A (Tc)	10V	4V @ 150µA	135nC @ 10V	4685pF @ 50V	±20V	-	46W (Tc)	4.2 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack
IRFB3006GPBF	Infineon Technologies	MOSFET N-CH 60V 195A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,768	MOSFET (Metal Oxide)	60V	195A (Tc)	10V	4V @ 250µA	300nC @ 10V	8970pF @ 50V	±20V	-	375W (Tc)	2.5 mOhm @ 170A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFS3206PBF	Infineon Technologies	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock588,156	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6540pF @ 50V	±20V	-	300W (Tc)	3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFP3415PBF	Infineon Technologies	MOSFET N-CH 150V 43A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock56,352	MOSFET (Metal Oxide)	150V	43A (Tc)	10V	4V @ 250µA	200nC @ 10V	2400pF @ 25V	±20V	-	200W (Tc)	42 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRLS4030TRL7PP	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock16,758	MOSFET (Metal Oxide)	100V	190A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11490pF @ 50V	±16V	-	370W (Tc)	3.9 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPP65R190E6XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,456	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	3.5V @ 730µA	73nC @ 10V	1620pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA65R190CFD	Infineon Technologies	MOSFET N-CH 650V 17.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,364	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	4.5V @ 730µA	68nC @ 10V	1850pF @ 100V	±20V	-	34W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRF1607PBF	Infineon Technologies	MOSFET N-CH 75V 142A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 142A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock56,190	MOSFET (Metal Oxide)	75V	142A (Tc)	10V	4V @ 250µA	320nC @ 10V	7750pF @ 25V	±20V	-	380W (Tc)	7.5 mOhm @ 85A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFI4228PBF	Infineon Technologies	MOSFET N-CH 150V 34A TO-220AB FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,892	MOSFET (Metal Oxide)	150V	34A (Tc)	10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	±30V	-	46W (Tc)	16 mOhm @ 20A, 10V	-40°C ~ 150°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFS4410ZPBF	Infineon Technologies	MOSFET N-CH 100V 97A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock396,936	MOSFET (Metal Oxide)	100V	97A (Tc)	10V	4V @ 150µA	120nC @ 10V	4820pF @ 50V	±20V	-	230W (Tc)	9 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB