Page 100 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRFR3910PBF
Infineon Technologies

MOSFET N-CH 100V 16A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock617,964
IRFR5505PBF
Infineon Technologies

MOSFET P-CH 55V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,656
IRFL4315PBF
Infineon Technologies

MOSFET N-CH 150V 2.6A SOT223

Package: TO-261-4, TO-261AA

Stock6,336
IPB65R420CFD
Infineon Technologies

MOSFET N-CH 650V 8.7A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,056
IRFR220NPBF
Infineon Technologies

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,184
BSC017N04NS G
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

Package: 8-PowerTDFN

Stock240,000
IRF1018ESTRLPBF
Infineon Technologies

MOSFET N-CH 60V 79A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock545,556
IRF7204PBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock32,040
IRF7205PBF
Infineon Technologies

MOSFET P-CH 30V 4.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock249,876
IRLL024NPBF
Infineon Technologies

MOSFET N-CH 55V 3.1A SOT223

Package: TO-261-4, TO-261AA

Stock56,976
IPB65R660CFD
Infineon Technologies

MOSFET N-CH 650V 6A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
IRFR120NPBF
Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock428,208
SPB04N60C3
Infineon Technologies

MOSFET N-CH 650V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock61,776
BSC014N03MS G
Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

Package: 8-PowerTDFN

Stock37,152
IPB60R600C6
Infineon Technologies

MOSFET N-CH 600V 7.3A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,120
BSZ018NE2LSI
Infineon Technologies

MOSFET N-CH 25V 22A TSDSON-8

Package: 8-PowerTDFN

Stock130,260
BSO201SP H
Infineon Technologies

MOSFET P-CH 20V 12A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock144,060
IRF7452TRPBF
Infineon Technologies

MOSFET N-CH 100V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock36,000
IRFR48ZTRLPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock182,400
IPU60R2K1CEBKMA1
Infineon Technologies

MOSFET N-CH 600V TO-251-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock14,610

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3910PBF	Infineon Technologies	MOSFET N-CH 100V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock617,964	MOSFET (Metal Oxide)	100V	16A (Tc)	10V	4V @ 250µA	44nC @ 10V	640pF @ 25V	±20V	-	79W (Tc)	115 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5505PBF	Infineon Technologies	MOSFET P-CH 55V 18A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,656	MOSFET (Metal Oxide)	55V	18A (Tc)	10V	4V @ 250µA	32nC @ 10V	650pF @ 25V	±20V	-	57W (Tc)	110 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFL4315PBF	Infineon Technologies	MOSFET N-CH 150V 2.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,336	MOSFET (Metal Oxide)	150V	2.6A (Ta)	10V	5V @ 250µA	19nC @ 10V	420pF @ 25V	±30V	-	2.8W (Ta)	185 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPB65R420CFD	Infineon Technologies	MOSFET N-CH 650V 8.7A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,056	MOSFET (Metal Oxide)	650V	8.7A (Tc)	10V	4.5V @ 340µA	32nC @ 10V	870pF @ 100V	±20V	-	83.3W (Tc)	420 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR220NPBF	Infineon Technologies	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,184	MOSFET (Metal Oxide)	200V	5A (Tc)	10V	4V @ 250µA	23nC @ 10V	300pF @ 25V	±20V	-	43W (Tc)	600 mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC017N04NS G	Infineon Technologies	MOSFET N-CH 40V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock240,000	MOSFET (Metal Oxide)	40V	30A (Ta), 100A (Tc)	10V	4V @ 85µA	108nC @ 10V	8800pF @ 20V	±20V	-	2.5W (Ta), 139W (Tc)	1.7 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRF1018ESTRLPBF	Infineon Technologies	MOSFET N-CH 60V 79A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock545,556	MOSFET (Metal Oxide)	60V	79A (Tc)	10V	4V @ 100µA	69nC @ 10V	2290pF @ 50V	±20V	-	110W (Tc)	8.4 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7204PBF	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock32,040	MOSFET (Metal Oxide)	20V	5.3A (Ta)	4.5V, 10V	2.5V @ 250µA	25nC @ 10V	860pF @ 10V	±12V	-	2.5W (Tc)	60 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7205PBF	Infineon Technologies	MOSFET P-CH 30V 4.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock249,876	MOSFET (Metal Oxide)	30V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	40nC @ 10V	870pF @ 10V	±20V	-	2.5W (Tc)	70 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLL024NPBF	Infineon Technologies	MOSFET N-CH 55V 3.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock56,976	MOSFET (Metal Oxide)	55V	3.1A (Ta)	4V, 10V	2V @ 250µA	15.6nC @ 5V	510pF @ 25V	±16V	-	1W (Ta)	65 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPB65R660CFD	Infineon Technologies	MOSFET N-CH 650V 6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	650V	6A (Tc)	10V	4.5V @ 200µA	22nC @ 10V	615pF @ 100V	±20V	-	62.5W (Tc)	660 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR120NPBF	Infineon Technologies	MOSFET N-CH 100V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock428,208	MOSFET (Metal Oxide)	100V	9.4A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	48W (Tc)	210 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SPB04N60C3	Infineon Technologies	MOSFET N-CH 650V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock61,776	MOSFET (Metal Oxide)	650V	4.5A (Tc)	10V	3.9V @ 200µA	25nC @ 10V	490pF @ 25V	±20V	-	50W (Tc)	950 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC014N03MS G	Infineon Technologies	MOSFET N-CH 30V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock37,152	MOSFET (Metal Oxide)	30V	30A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	173nC @ 10V	13000pF @ 15V	±20V	-	2.5W (Ta), 139W (Tc)	1.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPB60R600C6	Infineon Technologies	MOSFET N-CH 600V 7.3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,120	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	3.5V @ 200µA	20.5nC @ 10V	440pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSZ018NE2LSI	Infineon Technologies	MOSFET N-CH 25V 22A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock130,260	MOSFET (Metal Oxide)	25V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	36nC @ 10V	2500pF @ 12V	±20V	-	2.1W (Ta), 69W (Tc)	1.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
BSO201SP H	Infineon Technologies	MOSFET P-CH 20V 12A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock144,060	MOSFET (Metal Oxide)	20V	12A (Ta)	2.5V, 4.5V	1.2V @ 250µA	88nC @ 4.5V	9600pF @ 15V	±12V	-	1.6W (Ta)	8 mOhm @ 14.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRF7452TRPBF	Infineon Technologies	MOSFET N-CH 100V 4.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock36,000	MOSFET (Metal Oxide)	100V	4.5A (Ta)	10V	5.5V @ 250µA	50nC @ 10V	930pF @ 25V	±30V	-	2.5W (Ta)	60 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR48ZTRLPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock182,400	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 50µA	60nC @ 10V	1720pF @ 25V	±20V	-	91W (Tc)	11 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU60R2K1CEBKMA1	Infineon Technologies	MOSFET N-CH 600V TO-251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock14,610	MOSFET (Metal Oxide)	600V	2.3A (Tc)	10V	3.5V @ 60µA	6.7nC @ 10V	140pF @ 100V	±20V	-	22W (Tc)	2.1 Ohm @ 760mA, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPU50R2K0CEBKMA1	Infineon Technologies	MOSFET N-CH 500V 2.4A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock14,046	MOSFET (Metal Oxide)	500V	2.4A (Tc)	13V	3.5V @ 50µA	6nC @ 10V	124pF @ 100V	±20V	-	22W (Tc)	2 Ohm @ 600mA, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IRFH7932TRPBF	Infineon Technologies	MOSFET N-CH 30V 24A PQFN56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock354,984	MOSFET (Metal Oxide)	30V	24A (Ta), 104A (Tc)	4.5V, 10V	2.35V @ 100µA	51nC @ 4.5V	4270pF @ 15V	±20V	-	3.4W (Ta)	3.3 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
AUIRF7640S2TR	Infineon Technologies	MOSFET N-CH 60V 77A DIRECTFET-S2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET SB Package / Case: DirectFET? Isometric SB	Package: DirectFET? Isometric SB	Stock39,138	MOSFET (Metal Oxide)	60V	5.8A (Ta), 21A (Tc)	10V	5V @ 25µA	11nC @ 10V	450pF @ 25V	±20V	-	2.4W (Ta), 30W (Tc)	36 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET SB	DirectFET? Isometric SB
IRFR7446TRPBF	Infineon Technologies	MOSFET N-CH 40V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock72,600	MOSFET (Metal Oxide)	40V	56A (Tc)	6V, 10V	3.9V @ 100µA	130nC @ 10V	3150pF @ 25V	±20V	-	98W (Tc)	3.9 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSO130P03S H	Infineon Technologies	MOSFET P-CH 30V 9.2A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock21,720	MOSFET (Metal Oxide)	30V	9.2A (Ta)	10V	2.2V @ 140µA	81nC @ 10V	3520pF @ 25V	±25V	-	1.56W (Ta)	13 mOhm @ 11.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	P-DSO-8	8-SOIC (0.154", 3.90mm Width)
BSZ0901NS	Infineon Technologies	MOSFET N-CH 30V S308 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,804	MOSFET (Metal Oxide)	30V	22A (Ta), 40A (Tc)	4.5V, 10V	2.2V @ 250µA	45nC @ 10V	2850pF @ 15V	±20V	-	2.1W (Ta), 50W (Tc)	2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IRFR4105ZTRPBF	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,192	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	27nC @ 10V	740pF @ 25V	±20V	-	48W (Tc)	24.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ035N03MS G	Infineon Technologies	MOSFET N-CH 30V 40A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock164,616	MOSFET (Metal Oxide)	30V	18A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	74nC @ 10V	5700pF @ 15V	±20V	-	2.1W (Ta), 69W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN