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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 84W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,624 |
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MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 3.5V @ 280µA | 30nC @ 10V | 930pF @ 500V | ±20V | - | 84W (Tc) | 360 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock4,784 |
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MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 3.5V @ 50µA | 9nC @ 10V | 175pF @ 500V | ±20V | - | 24W (Tc) | 2 Ohm @ 940mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,760 |
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MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 3.5V @ 50µA | 9nC @ 10V | 175pF @ 500V | ±20V | - | 24W (Tc) | 2 Ohm @ 940mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,840 |
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MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | ±20V | - | 18W (Tc) | 3.3 Ohm @ 590mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 800mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock6,944 |
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MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5V @ 40µA | 7.5nC @ 10V | 150pF @ 500V | ±20V | - | 22W (Tc) | 2.4 Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 800mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,448 |
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MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5V @ 40µA | 7.5nC @ 10V | 150pF @ 500V | ±20V | - | 22W (Tc) | 2.4 Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,048 |
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MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 3.5V @ 170µA | 20nC @ 10V | 570pF @ 500V | ±20V | - | 60W (Tc) | 600 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL_30/40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-34
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,880 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2V @ 90µA | 140nC @ 10V | 8250pF @ 25V | ±16V | - | 150W (Tc) | 1.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 51W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,984 |
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MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 3.5V @ 140µA | 17nC @ 10V | 460pF @ 500V | ±20V | - | 51W (Tc) | 750 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,632 |
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MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 3.5V @ 110µA | 15nC @ 10V | 350pF @ 500V | ±20V | - | 45W (Tc) | 900 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 53µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,288 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 53µA | 66nC @ 10V | 5260pF @ 25V | ±20V | - | 94W (Tc) | 3.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,528 |
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MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 3.5V @ 80µA | 11nC @ 10V | 300pF @ 500V | ±20V | - | 37W (Tc) | 1.2 Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,896 |
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MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3.5V @ 700µA | 10nC @ 10V | 250pF @ 500V | ±20V | Super Junction | 32W (Tc) | 1.4 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 3.9A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,216 |
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MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 3.9V @ 240µA | 23nC @ 10V | 570pF @ 100V | ±20V | - | 63W (Tc) | 1.4 Ohm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,592 |
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MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 3.5V @ 50µA | 9nC @ 10V | 175pF @ 500V | ±20V | - | 24W (Tc) | 2 Ohm @ 940mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,968 |
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MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | ±16V | - | 94W (Tc) | 12 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 19A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,472 |
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MOSFET (Metal Oxide) | 40V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 25nC @ 10V | 1800pF @ 20V | ±20V | - | 2.1W (Ta), 52W (Tc) | 3.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 800mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,944 |
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MOSFET (Metal Oxide) | 800V | 2.5A (Tc) | 10V | 3.5V @ 40µA | 7.5nC @ 10V | 150pF @ 500V | ±20V | - | 22W (Tc) | 2.4 Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,744 |
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MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | ±20V | - | 18W (Tc) | 3.3 Ohm @ 590mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 17µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,416 |
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MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 2V @ 17µA | 29nC @ 10V | 1560pF @ 25V | ±16V | - | 48W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,696 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 35nC @ 10V | 2800pF @ 15V | ±20V | - | 2.1W (Ta), 50W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 550V 7.6A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,448 |
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MOSFET (Metal Oxide) | 550V | 7.6A (Tc) | 13V | 3.5V @ 200µA | 18.7nC @ 10V | 433pF @ 100V | ±20V | - | 57W (Tc) | 500 mOhm @ 2.3A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 6A PQFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
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Package: 6-PowerVDFN |
Stock17,016 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta), 13A (Tc) | 4.5V, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | ±20V | - | 2.1W (Ta) | 37 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 34V 9A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 34V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,928 |
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MOSFET (Metal Oxide) | 34V | 9A (Ta), 36A (Tc) | 4.5V, 10V | 2V @ 250µA | 17nC @ 10V | 1310pF @ 15V | ±20V | - | 2.1W (Ta), 25W (Tc) | 12 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock67,404 |
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MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | - | 192W (Tc) | 165 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 29A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 143µA
- Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 214W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,616 |
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MOSFET (Metal Oxide) | 60V | 29A (Ta), 120A (Tc) | 6V, 10V | 2.8V @ 143µA | 106nC @ 10V | 7800pF @ 30V | ±20V | - | 3W (Ta), 214W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N CH 60V 173A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,248 |
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MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | - | 230W (Tc) | 3.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 71A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,568 |
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MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 1V @ 250µA | 76nC @ 4.5V | 3720pF @ 25V | ±16V | - | 3.8W (Ta), 200W (Tc) | 5.5 mOhm @ 71A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |