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Infineon Technologies |
MOSFET N-CH 25V 9.9A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
|
Package: 6-PowerVDFN |
Stock482,568 |
|
MOSFET (Metal Oxide) | 25V | 9.9A (Ta), 21A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | ±20V | - | 2.1W (Ta) | 13 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 250V 190MA SOT89
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock6,992 |
|
MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | ±20V | - | 1W (Ta) | 12 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 75V 2.5A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSOP6-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,392 |
|
MOSFET (Metal Oxide) | 75V | 2.5A (Ta) | 4.5V, 10V | 1.8V @ 218µA | 13.1nC @ 10V | 315pF @ 25V | ±20V | - | 2W (Ta) | 150 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 240V 260MA SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89-4-2
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock6,192 |
|
MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 4.5V, 10V | 1.8V @ 108µA | 5.5nC @ 10V | 97pF @ 25V | ±20V | - | 1W (Ta) | 6 Ohm @ 260mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89-4-2 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 600V 90MA SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock3,440 |
|
MOSFET (Metal Oxide) | 600V | 90mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 5.8nC @ 10V | 131pF @ 25V | ±20V | - | 1W (Ta) | 45 Ohm @ 90mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 75V 2.3A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock3,264 |
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MOSFET (Metal Oxide) | 75V | 2.3A (Ta) | 4.5V, 10V | 1.8V @ 218µA | 13.1nC @ 10V | 315pF @ 25V | ±20V | - | 1.8W (Ta) | 160 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock4,480 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock4,272 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock3,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock6,784 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO-252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,904 |
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MOSFET (Metal Oxide) | 650V | 2.6A (Tc) | 10V | 3.5V @ 40µA | 4.6nC @ 10V | 93pF @ 100V | ±20V | - | 29W (Tc) | 3.4 Ohm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR P-CH BARE DIE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock7,936 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V SAWN BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
|
Package: Die |
Stock5,184 |
|
MOSFET (Metal Oxide) | 30V | 2A (Tj) | 10V | 2.2V @ 250µA | - | - | - | - | - | 50 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock4,640 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT363
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,552 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | ±20V | - | 500mW (Ta) | 140 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-TSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,944 |
|
MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 2.3V @ 13µA | 0.6nC @ 10V | 20.9pF @ 25V | ±20V | - | 500mW (Ta) | 6 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Vgs(th) (Max) @ Id: 0.95V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,504 |
|
MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 0.95V @ 3.7µA | 0.6nC @ 2.5V | 180pF @ 10V | ±8V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-TSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-VSSOP, SC-88, SOT-363
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock4,736 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | ±12V | - | 500mW (Ta) | 140 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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|
Infineon Technologies |
MOSFET N-CH 30V 1.4A SOT363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-VSSOP, SC-88, SOT-363
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock4,560 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 94pF @ 15V | ±20V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
|
|
Infineon Technologies |
SMALL SIGNAL+P-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock5,632 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET N-CH 55V 540MA SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock7,568 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Vgs(th) (Max) @ Id: 0.75V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock2,000 |
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MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 0.75V @ 3.7µA | 0.6nC @ 2.5V | 180pF @ 10V | ±8V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,856 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.3V @ 26µA | 1.5nC @ 10V | 56pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,296 |
|
- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 280MA SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock2,448 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 1.4V @ 26µA | 1.5nC @ 10V | 43pF @ 25V | ±20V | - | 500mW (Ta) | 3.5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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|
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,248 |
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MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 1.8V @ 26µA | 1.5nC @ 10V | 45pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Infineon Technologies |
MOSFET N-CH 700V 31.2A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 277.8W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock5,824 |
|
MOSFET (Metal Oxide) | 700V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | - | 277.8W (Tc) | 110 mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220FP-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,568 |
|
MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 4.5V @ 1.21mA | 70nC @ 10V | 3330pF @ 100V | ±20V | - | 34W (Tc) | 99 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |