Page 174 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF6893MTRPBF
Infineon Technologies

MOSFET N-CH 25V 29A MX

Package: DirectFET? Isometric MX

Stock6,224
IPP60R385CPXKSA1
Infineon Technologies

MOSFET N-CH 650V 9A TO-220

Package: TO-220-3

Stock2,624
IPI60R385CPXKSA1
Infineon Technologies

MOSFET N-CH 650V 9A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,296
IPP120N04S401AKSA1
Infineon Technologies

MOSFET N-CH 40V 120A TO220-3-1

Package: TO-220-3

Stock6,592
IPP100N08S2L07AKSA1
Infineon Technologies

MOSFET N-CH 75V 100A TO220-3

Package: TO-220-3

Stock5,104
IPB120N10S405ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,232
IPD60R180C7ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,240
IPB240N04S41R0ATMA1
Infineon Technologies

MOSFET N-CH TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock6,080
IPB120N08S404ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,568
AUIRFZ44VZSTRL
Infineon Technologies

MOSFET N-CH 60V 57A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,568
IPC173N10N3X1SA1
Infineon Technologies

MOSFET N-CH 100V BARE DIE

Package: Die

Stock2,640
IRF6637TRPBF
Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

Package: DirectFET? Isometric MP

Stock13,260
IPB80N08S207ATMA1
Infineon Technologies

MOSFET N-CH 75V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,280
IPP80N04S303AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

Package: TO-220-3

Stock4,080
AUIRL7736M2TR
Infineon Technologies

MOSFET N-CH 40V 112A DIRECTFET

Package: DirectFET? Isometric M4

Stock6,400
AUIRF7736M2TR
Infineon Technologies

MOSFET N-CH 40V 179A DIRECTFET

Package: DirectFET? Isometric M4

Stock5,264
AUIRFZ48N
Infineon Technologies

MOSFET N CH 55V 69A TO-220AB

Package: TO-220-3

Stock3,392
IRFB7746PBF
Infineon Technologies

MOSFET N-CH 75V 59A TO220

Package: TO-220-3

Stock4,000
IPC60R280E6X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock7,296
IPB80N04S204ATMA2
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,048

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6893MTRPBF	Infineon Technologies	MOSFET N-CH 25V 29A MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 13V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 29A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock6,224	MOSFET (Metal Oxide)	25V	29A (Ta), 168A (Tc)	4.5V, 10V	2.1V @ 100µA	38nC @ 4.5V	3480pF @ 13V	±16V	-	2.1W (Ta), 69W (Tc)	1.6 mOhm @ 29A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IPP60R385CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,624	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	3.5V @ 340µA	22nC @ 10V	790pF @ 100V	±20V	-	83W (Tc)	385 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPI60R385CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 9A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,296	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	3.5V @ 340µA	22nC @ 10V	790pF @ 100V	±20V	-	83W (Tc)	385 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPP120N04S401AKSA1	Infineon Technologies	MOSFET N-CH 40V 120A TO220-3-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,592	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 140µA	176nC @ 10V	14000pF @ 25V	±20V	-	188W (Tc)	1.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP100N08S2L07AKSA1	Infineon Technologies	MOSFET N-CH 75V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock5,104	MOSFET (Metal Oxide)	75V	100A (Tc)	4.5V, 10V	2V @ 250µA	246nC @ 10V	5400pF @ 25V	±20V	-	300W (Tc)	6.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPB120N10S405ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,232	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	3.5V @ 120µA	91nC @ 10V	6540pF @ 25V	±20V	-	190W (Tc)	5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD60R180C7ATMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,240	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 260µA	24nC @ 10V	1080pF @ 400V	±20V	-	68W (Tc)	180 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB240N04S41R0ATMA1	Infineon Technologies	MOSFET N-CH TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 221nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17682pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,080	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	4V @ 180µA	221nC @ 10V	17682pF @ 25V	±20V	-	231W (Tc)	1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab)
IPB120N08S404ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 120µA	95nC @ 10V	6450pF @ 25V	±20V	-	179W (Tc)	4.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFZ44VZSTRL	Infineon Technologies	MOSFET N-CH 60V 57A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,568	MOSFET (Metal Oxide)	60V	57A (Tc)	10V	4V @ 250µA	65nC @ 10V	1690pF @ 25V	±20V	-	92W (Tc)	12 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPC173N10N3X1SA1	Infineon Technologies	MOSFET N-CH 100V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	Package: Die	Stock2,640	MOSFET (Metal Oxide)	100V	1A (Tj)	10V	3.5V @ 150µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
IRF6637TRPBF	Infineon Technologies	MOSFET N-CH 30V 14A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 14A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MP Package / Case: DirectFET? Isometric MP	Package: DirectFET? Isometric MP	Stock13,260	MOSFET (Metal Oxide)	30V	14A (Ta), 59A (Tc)	4.5V, 10V	2.35V @ 250µA	17nC @ 4.5V	1330pF @ 15V	±20V	-	2.3W (Ta), 42W (Tc)	7.7 mOhm @ 14A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MP	DirectFET? Isometric MP
IPB80N08S207ATMA1	Infineon Technologies	MOSFET N-CH 75V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,280	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	180nC @ 10V	4700pF @ 25V	±20V	-	300W (Tc)	7.1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP80N04S303AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,080	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 120µA	110nC @ 10V	7300pF @ 25V	±20V	-	188W (Tc)	3.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AUIRL7736M2TR	Infineon Technologies	MOSFET N-CH 40V 112A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5055pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? M4 Package / Case: DirectFET? Isometric M4	Package: DirectFET? Isometric M4	Stock6,400	MOSFET (Metal Oxide)	40V	179A (Tc)	4.5V, 10V	2.5V @ 150µA	78nC @ 4.5V	5055pF @ 25V	±16V	-	2.5W (Ta), 63W (Tc)	3 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET? M4	DirectFET? Isometric M4
AUIRF7736M2TR	Infineon Technologies	MOSFET N-CH 40V 179A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4267pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? M4 Package / Case: DirectFET? Isometric M4	Package: DirectFET? Isometric M4	Stock5,264	MOSFET (Metal Oxide)	40V	22A (Ta), 108A (Tc)	10V	4V @ 150µA	108nC @ 10V	4267pF @ 25V	±20V	-	2.5W (Ta), 63W (Tc)	3 mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET? M4	DirectFET? Isometric M4
AUIRFZ48N	Infineon Technologies	MOSFET N CH 55V 69A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,392	MOSFET (Metal Oxide)	55V	69A (Tc)	10V	4V @ 100µA	63nC @ 10V	1900pF @ 25V	±20V	-	160W (Tc)	14 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB7746PBF	Infineon Technologies	MOSFET N-CH 75V 59A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3049pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,000	MOSFET (Metal Oxide)	75V	59A (Tc)	6V, 10V	3.7V @ 100µA	83nC @ 10V	3049pF @ 25V	±20V	-	99W (Tc)	10.6 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPC60R280E6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,296	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB80N04S204ATMA2	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,048	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	170nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	3.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA040N06NXKSA1	Infineon Technologies	MOSFET N-CH 60V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 69A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,480	MOSFET (Metal Oxide)	60V	69A (Tc)	6V, 10V	3.3V @ 50µA	44nC @ 10V	3375pF @ 30V	±20V	-	36W (Tc)	4 mOhm @ 69A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPC90R800C3X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,624	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP100N06S2L05AKSA2	Infineon Technologies	MOSFET N-CH 55V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,552	MOSFET (Metal Oxide)	55V	100A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	5660pF @ 25V	±20V	-	300W (Tc)	4.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP50R299CPHKSA1	Infineon Technologies	MOSFET N-CH 550V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,816	MOSFET (Metal Oxide)	550V	12A (Tc)	10V	3.5V @ 440µA	31nC @ 10V	1190pF @ 100V	±20V	-	104W (Tc)	299 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPA50R299CPXKSA1	Infineon Technologies	MOSFET N-CH 550V 12A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,280	MOSFET (Metal Oxide)	550V	12A (Tc)	10V	3.5V @ 440µA	31nC @ 10V	1190pF @ 100V	±20V	-	104W (Tc)	299 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRF6892STRPBF	Infineon Technologies	MOSFET N CH 25V 28A S3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 125A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 13V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 28A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? S3C Package / Case: DirectFET? Isometric S3C	Package: DirectFET? Isometric S3C	Stock57,600	MOSFET (Metal Oxide)	25V	28A (Ta), 125A (Tc)	4.5V, 10V	2.1V @ 50µA	25nC @ 4.5V	2510pF @ 13V	±16V	-	2.1W (Ta), 42W (Tc)	1.7 mOhm @ 28A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? S3C	DirectFET? Isometric S3C
AUIRF6215	Infineon Technologies	MOSFET P-CH 150V 13A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,068	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	110W (Tc)	290 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRF6215STRL	Infineon Technologies	MOSFET P-CH 150V 13A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,928	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	3.8W (Ta), 110W (Tc)	290 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB