Page 176 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRFH5025TRPBF
Infineon Technologies

MOSFET N-CH 250V 3.8A PQFN56

Package: 8-VQFN

Stock5,200
IRF1503PBF
Infineon Technologies

MOSFET N-CH 30V 75A TO-220AB

Package: TO-220-3

Stock2,000
IPI120N06S402AKSA1
Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,016
AUIRFS3607TRL
Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,248
SPI12N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 11.6A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,800
IPI65R280E6XKSA1
Infineon Technologies

MOSFET N-CH 650V 13.8A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,632
SPP07N60S5XKSA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock5,744
SPP07N60S5HKSA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock3,792
IPB042N10N3GE8187ATMA1
Infineon Technologies

MOSFET N-CH 100V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,944
IPI120N06S402AKSA2
Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,792
IPP65R280C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

Package: TO-220-3

Stock5,184
IPP65R280E6
Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

Package: TO-220-3

Stock401,304
IPB60R180C7ATMA1
Infineon Technologies

MOSFET N-CH 600V TO263-3

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock5,216
IPB120N06S4H1ATMA2
Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,488
IPP50R250CPXKSA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock7,248
IRFS33N15DTRLP
Infineon Technologies

MOSFET N-CH 150V 33A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,788
IRFB7787PBF
Infineon Technologies

MOSFET N-CH 75V 83A TO220

Package: TO-220-3

Stock6,576
SPP07N65C3XKSA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock7,776
SPA07N65C3XKSA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO-220

Package: TO-220-3 Full Pack

Stock3,008
IPL60R185C7AUMA1
Infineon Technologies

MOSFET N-CH 600V 13A 4VSON

Package: 4-PowerTSFN

Stock4,832

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH5025TRPBF	Infineon Technologies	MOSFET N-CH 250V 3.8A PQFN56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN Package / Case: 8-VQFN	Package: 8-VQFN	Stock5,200	MOSFET (Metal Oxide)	250V	3.8A (Ta)	10V	5V @ 150µA	56nC @ 10V	2150pF @ 50V	±20V	-	3.6W (Ta), 8.3W (Tc)	100 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN	8-VQFN
IRF1503PBF	Infineon Technologies	MOSFET N-CH 30V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 250µA	200nC @ 10V	5730pF @ 25V	±20V	-	330W (Tc)	3.3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI120N06S402AKSA1	Infineon Technologies	MOSFET N-CH 60V 120A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,016	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 140µA	195nC @ 10V	15750pF @ 25V	±20V	-	188W (Tc)	2.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRFS3607TRL	Infineon Technologies	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,248	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 100µA	84nC @ 10V	3070pF @ 50V	±20V	-	140W (Tc)	9 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPI12N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 11.6A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,800	MOSFET (Metal Oxide)	560V	11.6A (Tc)	10V	3.9V @ 500µA	49nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R280E6XKSA1	Infineon Technologies	MOSFET N-CH 650V 13.8A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,632	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SPP07N60S5XKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,744	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPP07N60S5HKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,792	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB042N10N3GE8187ATMA1	Infineon Technologies	MOSFET N-CH 100V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,944	MOSFET (Metal Oxide)	100V	100A (Tc)	6V, 10V	3.5V @ 150µA	117nC @ 10V	8410pF @ 50V	±20V	-	214W (Tc)	4.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI120N06S402AKSA2	Infineon Technologies	MOSFET N-CH 60V 120A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,792	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 140µA	195nC @ 10V	15750pF @ 25V	±20V	-	188W (Tc)	2.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IPP65R280C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 13.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,184	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPP65R280E6	Infineon Technologies	MOSFET N-CH 650V 13.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock401,304	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPB60R180C7ATMA1	Infineon Technologies	MOSFET N-CH 600V TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock5,216	MOSFET (Metal Oxide)	650V	13A (Tc)	10V	4V @ 260µA	24nC @ 10V	1080pF @ 400V	±20V	-	68W (Tc)	130 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
IPB120N06S4H1ATMA2	Infineon Technologies	MOSFET N-CH 60V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,488	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 200µA	270nC @ 10V	21900pF @ 25V	±20V	-	250W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP50R250CPXKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,248	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFS33N15DTRLP	Infineon Technologies	MOSFET N-CH 150V 33A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,788	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5.5V @ 250µA	90nC @ 10V	2020pF @ 25V	±30V	-	3.8W (Ta), 170W (Tc)	56 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFB7787PBF	Infineon Technologies	MOSFET N-CH 75V 83A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,576	MOSFET (Metal Oxide)	75V	76A (Tc)	6V, 10V	3.7V @ 100µA	109nC @ 10V	4020pF @ 25V	±20V	-	125W (Tc)	8.4 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPP07N65C3XKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,776	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPA07N65C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,008	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	32W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220FP	TO-220-3 Full Pack
IPL60R185C7AUMA1	Infineon Technologies	MOSFET N-CH 600V 13A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 5.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock4,832	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 260µA	24nC @ 10V	1080pF @ 400V	±20V	-	77W (Tc)	185 mOhm @ 5.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IPP120N08S404AKSA1	Infineon Technologies	MOSFET N-CH TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,568	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 120µA	95nC @ 10V	6450pF @ 25V	±20V	-	179W (Tc)	4.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPP12N50C3XKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,968	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFS41N15DTRLP	Infineon Technologies	MOSFET N-CH 150V 41A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,100	MOSFET (Metal Oxide)	150V	41A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2520pF @ 25V	±30V	-	3.1W (Ta)	45 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFB3407ZPBF	Infineon Technologies	MOSFET N-CH 75V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,984	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 150µA	110nC @ 10V	4750pF @ 50V	±20V	-	230W (Tc)	6.4 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRF3315STRL	Infineon Technologies	MOSFET N-CH 150V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,020	MOSFET (Metal Oxide)	150V	21A (Tc)	10V	4V @ 250µA	95nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 94W (Tc)	82 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R310CFDAATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,432	MOSFET (Metal Oxide)	650V	11.4A (Tc)	10V	4.5V @ 440µA	41nC @ 10V	1110pF @ 100V	±20V	-	104.2W (Tc)	310 mOhm @ 4.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRL3705Z	Infineon Technologies	MOSFET N-CH 55V 86A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,936	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	3V @ 250µA	60nC @ 5V	2880pF @ 25V	±16V	-	130W (Tc)	8 mOhm @ 52A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPB16N50C3	Infineon Technologies	MOSFET N-CH 560V 16A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	560V	16A (Tc)	10V	3.9V @ 675µA	66nC @ 10V	1600pF @ 25V	±20V	-	160W (Tc)	280 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB