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Infineon Technologies |
MOSFET N-CH 75V 87A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 52A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock970,368 |
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MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 3.7V @ 100µA | 122nC @ 10V | 4650pF @ 25V | ±20V | - | 143W (Tc) | 7.3 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 85A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 51A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,752 |
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MOSFET (Metal Oxide) | 75V | 85A (Tc) | 6V, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | ±20V | - | 140W (Tc) | 6.7 mOhm @ 51A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 76A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,068 |
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MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | ±20V | - | 125W (Tc) | 8.4 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
TRANSISTOR N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,832 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 173A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,912 |
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MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | - | 230W (Tc) | 3.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock6,544 |
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MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | ±20V | - | 33W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock43,656 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 230W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,344 |
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MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 5730pF @ 25V | ±20V | - | 200W (Tc) | 3.3 mOhm @ 140A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 900V 5.7A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,432 |
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MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | ±20V | - | 89W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock83,772 |
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MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 5.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3 Isolated Tab
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Package: TO-220-3 Isolated Tab |
Stock4,848 |
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MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 85nC @ 10V | 1600pF @ 100V | ±20V | - | 34W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 100V 160A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock5,248 |
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MOSFET (Metal Oxide) | 100V | 160A (Tc) | 6V, 10V | 3.5V @ 160µA | 117nC @ 10V | 8410pF @ 50V | ±20V | - | 214W (Tc) | 3.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,800 |
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MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 250µA | 187nC @ 10V | 3660pF @ 25V | ±20V | - | 300W (Tc) | 8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 160A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 83nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 148A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,328 |
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MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 2.35V @ 150µA | 83nC @ 4.5V | 8020pF @ 25V | ±20V | - | 195W (Tc) | 1.95 mOhm @ 148A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,952 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.5V @ 120µA | 91nC @ 10V | 6540pF @ 25V | ±20V | - | 190W (Tc) | 5.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 33A TO220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-5
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
|
Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Stock5,440 |
|
MOSFET (Metal Oxide) | 55V | 33A (Tc) | 4.5V, 10V | 2V @ 90µA | 90nC @ 10V | 1730pF @ 25V | ±20V | Temperature Sensing Diode | 120W (Tc) | 18 mOhm @ 12A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-5 | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
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Infineon Technologies |
MOSFET N-CH TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,096 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 120µA | 95nC @ 10V | 6450pF @ 25V | ±20V | - | 179W (Tc) | 4.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 223µA
- Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,008 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 223µA | 167nC @ 10V | 11550pF @ 25V | ±20V | - | 278W (Tc) | 2.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock3,536 |
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MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4700pF @ 25V | ±20V | - | 300W (Tc) | 7.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock28,800 |
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MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 4 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 33A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,392 |
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MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | - | 144W (Tc) | 42 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 550V 17A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,112 |
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MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 3.5V @ 660µA | 45nC @ 10V | 1800pF @ 100V | ±20V | - | 139W (Tc) | 199 mOhm @ 9.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,552 |
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MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 4.5V @ 750µA | 44nC @ 10V | 2080pF @ 100V | ±20V | - | 176W (Tc) | 160 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 84A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,600 |
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MOSFET (Metal Oxide) | 60V | 84A (Tc) | 6V, 10V | 3.3V @ 75µA | 66nC @ 10V | 5125pF @ 30V | ±20V | - | 38W (Tc) | 2.9 mOhm @ 84A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO262-3-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,824 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 140µA | 176nC @ 10V | 14000pF @ 25V | ±20V | - | 188W (Tc) | 1.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,104 |
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MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 79A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,384 |
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MOSFET (Metal Oxide) | 60V | 79A (Tc) | - | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | - | - | 110W (Tc) | 8.4 mOhm @ 47A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,248 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | ±20V | - | 214W (Tc) | 2.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |