Page 203 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF7807D1TR
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,448
IRF7468TR
Infineon Technologies

MOSFET N-CH 40V 9.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,056,672
IRF7467TR
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,544
IRF7466TR
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,280
IRF7464TR
Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock209,808
IRF7463TR
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,320
IRF7460TR
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock44,028
IRF7459TR
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock13,260
IRF7458TR
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock140,040
IRF7457TR
Infineon Technologies

MOSFET N-CH 20V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,864
IRF7452TR
Infineon Technologies

MOSFET N-CH 100V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,240
IRF7422D2TR
Infineon Technologies

MOSFET P-CH 20V 4.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,512
IRF7421D1TR
Infineon Technologies

MOSFET N-CH 30V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock176,580
IRF7413ATR
Infineon Technologies

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,560
IRF7402TR
Infineon Technologies

MOSFET N-CH 20V 6.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock579,600
IRF7353D2
Infineon Technologies

MOSFET N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock38,724
IRF7324D1TR
Infineon Technologies

MOSFET P-CH 20V 2.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock48,000
IRF7322D1TR
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,916
IRF7322D1
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,576
IRF7233TR
Infineon Technologies

MOSFET P-CH 12V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock930,372

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7807D1TR	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,448	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	17nC @ 5V	-	±12V	Schottky Diode (Isolated)	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7468TR	Infineon Technologies	MOSFET N-CH 40V 9.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,056,672	MOSFET (Metal Oxide)	40V	9.4A (Ta)	4.5V, 10V	2V @ 250µA	34nC @ 4.5V	2460pF @ 20V	±12V	-	2.5W (Ta)	15.5 mOhm @ 9.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7467TR	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,544	MOSFET (Metal Oxide)	30V	11A (Ta)	2.8V, 10V	2V @ 250µA	32nC @ 4.5V	2530pF @ 15V	±12V	-	2.5W (Ta)	12 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7466TR	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,280	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	23nC @ 4.5V	2100pF @ 15V	±20V	-	2.5W (Ta)	12.5 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7464TR	Infineon Technologies	MOSFET N-CH 200V 1.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock209,808	MOSFET (Metal Oxide)	200V	1.2A (Ta)	10V	5.5V @ 250µA	14nC @ 10V	280pF @ 25V	±30V	-	2.5W (Ta)	730 mOhm @ 720mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7463TR	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,320	MOSFET (Metal Oxide)	30V	14A (Ta)	2.7V, 10V	2V @ 250µA	51nC @ 4.5V	3150pF @ 15V	±12V	-	2.5W (Ta)	8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7460TR	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock44,028	MOSFET (Metal Oxide)	20V	12A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	2050pF @ 10V	±20V	-	2.5W (Ta)	10 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7459TR	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock13,260	MOSFET (Metal Oxide)	20V	12A (Ta)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2480pF @ 10V	±12V	-	2.5W (Ta)	9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7458TR	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 16V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 16V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock140,040	MOSFET (Metal Oxide)	30V	14A (Ta)	10V, 16V	4V @ 250µA	59nC @ 10V	2410pF @ 15V	±30V	-	2.5W (Ta)	8 mOhm @ 14A, 16V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7457TR	Infineon Technologies	MOSFET N-CH 20V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,864	MOSFET (Metal Oxide)	20V	15A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	3100pF @ 10V	±20V	-	2.5W (Ta)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7452TR	Infineon Technologies	MOSFET N-CH 100V 4.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,240	MOSFET (Metal Oxide)	100V	4.5A (Ta)	10V	5.5V @ 250µA	50nC @ 10V	930pF @ 25V	±30V	-	2.5W (Ta)	60 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7422D2TR	Infineon Technologies	MOSFET P-CH 20V 4.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,512	MOSFET (Metal Oxide)	20V	4.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	90 mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7421D1TR	Infineon Technologies	MOSFET N-CH 30V 5.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock176,580	MOSFET (Metal Oxide)	30V	5.8A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	510pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	35 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7413ATR	Infineon Technologies	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,560	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	1V @ 250µA	79nC @ 10V	1800pF @ 25V	±20V	-	2.5W (Ta)	13.5 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7402TR	Infineon Technologies	MOSFET N-CH 20V 6.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock579,600	MOSFET (Metal Oxide)	20V	6.8A (Ta)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	650pF @ 15V	±12V	-	2.5W (Ta)	35 mOhm @ 4.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7353D2	Infineon Technologies	MOSFET N-CH 30V 6.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock38,724	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	29 mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7324D1TR	Infineon Technologies	MOSFET P-CH 20V 2.2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock48,000	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.7V, 4.5V	700mV @ 250µA	7.8nC @ 4.5V	260pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	270 mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7322D1TR	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,916	MOSFET (Metal Oxide)	20V	5.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	62 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7322D1	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,576	MOSFET (Metal Oxide)	20V	5.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	62 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7233TR	Infineon Technologies	MOSFET P-CH 12V 9.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock930,372	MOSFET (Metal Oxide)	12V	9.5A (Ta)	2.5V, 4.5V	600mV @ 250µA	74nC @ 5V	6000pF @ 10V	±12V	-	2.5W (Ta)	20 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7207TR	Infineon Technologies	MOSFET P-CH 20V 5.4A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,489,764	MOSFET (Metal Oxide)	20V	5.4A (Tc)	2.7V, 4.5V	700mV @ 250µA	22nC @ 4.5V	780pF @ 15V	±12V	-	2.5W (Tc)	60 mOhm @ 5.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF520NSTRR	Infineon Technologies	MOSFET N-CH 100V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,464	MOSFET (Metal Oxide)	100V	9.7A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	200 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF520NSTRL	Infineon Technologies	MOSFET N-CH 100V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,376	MOSFET (Metal Oxide)	100V	9.7A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	200 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF520NL	Infineon Technologies	MOSFET N-CH 100V 9.7A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,456	MOSFET (Metal Oxide)	100V	9.7A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	200 mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF4905STRR	Infineon Technologies	MOSFET P-CH 55V 74A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,944	MOSFET (Metal Oxide)	55V	74A (Tc)	10V	4V @ 250µA	180nC @ 10V	3400pF @ 25V	±20V	-	3.8W (Ta), 200W (Tc)	20 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3708STRR	Infineon Technologies	MOSFET N-CH 30V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,344	MOSFET (Metal Oxide)	30V	62A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3708STRL	Infineon Technologies	MOSFET N-CH 30V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,744	MOSFET (Metal Oxide)	30V	62A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3708S	Infineon Technologies	MOSFET N-CH 30V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,528	MOSFET (Metal Oxide)	30V	62A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB