Page 204 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRFR18N15DTR
Infineon Technologies

MOSFET N-CH 150V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,600
IRFR18N15DTRL
Infineon Technologies

MOSFET N-CH 150V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,256
IRFR13N20DTRR
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,128
IRFR13N20DTR
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24,000
IRFR13N20DTRL
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,464
IRFR1205TRR
Infineon Technologies

MOSFET N-CH 55V 44A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,088
IRFR1205TRL
Infineon Technologies

MOSFET N-CH 55V 44A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,504
IRFR024NTRR
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,584
IRFL1006TR
Infineon Technologies

MOSFET N-CH 60V 1.6A SOT223

Package: TO-261-4, TO-261AA

Stock5,200
IRFL024NTR
Infineon Technologies

MOSFET N-CH 55V 2.8A SOT223

Package: TO-261-4, TO-261AA

Stock92,436
IRFI9Z34N
Infineon Technologies

MOSFET P-CH 55V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock8,448
IRFI9Z24N
Infineon Technologies

MOSFET P-CH 55V 9.5A TO-220FP

Package: TO-220-3 Full Pack

Stock3,696
IRFI9530N
Infineon Technologies

MOSFET P-CH 100V 7.7A TO-220FP

Package: TO-220-3 Full Pack

Stock2,672
IRFI4905
Infineon Technologies

MOSFET P-CH 55V 41A TO-220FP

Package: TO-220-3 Full Pack

Stock12,132
IRFI2807
Infineon Technologies

MOSFET N-CH 75V 40A TO220FP

Package: TO-220-3 Full Pack

Stock5,824
IRFBL3315
Infineon Technologies

MOSFET N-CH 150V 21A SUPER D2PAK

Package: Super D2-Pak

Stock7,456
IRF9Z34NSTRR
Infineon Technologies

MOSFET P-CH 55V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
IRF9Z24NSTRR
Infineon Technologies

MOSFET P-CH 55V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,000
IRF9Z24NSTRL
Infineon Technologies

MOSFET P-CH 55V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,024
IRF9540NSTRR
Infineon Technologies

MOSFET P-CH 100V 23A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,400

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR18N15DTR	Infineon Technologies	MOSFET N-CH 150V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,600	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	±30V	-	110W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR18N15DTRL	Infineon Technologies	MOSFET N-CH 150V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,256	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	±30V	-	110W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTRR	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,128	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTR	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,000	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTRL	Infineon Technologies	MOSFET N-CH 200V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,464	MOSFET (Metal Oxide)	200V	13A (Tc)	10V	5.5V @ 250µA	38nC @ 10V	830pF @ 25V	±30V	-	110W (Tc)	235 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1205TRR	Infineon Technologies	MOSFET N-CH 55V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,088	MOSFET (Metal Oxide)	55V	44A (Tc)	10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	±20V	-	107W (Tc)	27 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1205TRL	Infineon Technologies	MOSFET N-CH 55V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,504	MOSFET (Metal Oxide)	55V	44A (Tc)	10V	4V @ 250µA	65nC @ 10V	1300pF @ 25V	±20V	-	107W (Tc)	27 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR024NTRR	Infineon Technologies	MOSFET N-CH 55V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,584	MOSFET (Metal Oxide)	55V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	370pF @ 25V	±20V	-	45W (Tc)	75 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFL1006TR	Infineon Technologies	MOSFET N-CH 60V 1.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,200	MOSFET (Metal Oxide)	60V	1.6A (Ta)	10V	4V @ 250µA	8nC @ 10V	160pF @ 25V	±20V	-	1W (Ta)	220 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL024NTR	Infineon Technologies	MOSFET N-CH 55V 2.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock92,436	MOSFET (Metal Oxide)	55V	2.8A (Ta)	10V	4V @ 250µA	18.3nC @ 10V	400pF @ 25V	±20V	-	1W (Ta)	75 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFI9Z34N	Infineon Technologies	MOSFET P-CH 55V 14A TO-220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,448	MOSFET (Metal Oxide)	55V	14A (Tc)	10V	4V @ 250µA	35nC @ 10V	620pF @ 25V	±20V	-	37W (Tc)	100 mOhm @ 7.8A, 10V	-	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFI9Z24N	Infineon Technologies	MOSFET P-CH 55V 9.5A TO-220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.4A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,696	MOSFET (Metal Oxide)	55V	9.5A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	29W (Tc)	175 mOhm @ 5.4A, 10V	-	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFI9530N	Infineon Technologies	MOSFET P-CH 100V 7.7A TO-220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,672	MOSFET (Metal Oxide)	100V	7.7A (Ta)	-	4V @ 250µA	38nC @ 10V	860pF @ 25V	-	-	-	300 mOhm @ 4.6A, 10V	-	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFI4905	Infineon Technologies	MOSFET P-CH 55V 41A TO-220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 22A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,132	MOSFET (Metal Oxide)	55V	41A (Tc)	10V	4V @ 250µA	180nC @ 10V	3400pF @ 25V	±20V	-	63W (Tc)	20 mOhm @ 22A, 10V	-	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFI2807	Infineon Technologies	MOSFET N-CH 75V 40A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,824	MOSFET (Metal Oxide)	75V	40A (Tc)	10V	4V @ 250µA	150nC @ 10V	3400pF @ 25V	±20V	-	48W (Tc)	13 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRFBL3315	Infineon Technologies	MOSFET N-CH 150V 21A SUPER D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SUPER D2-PAK Package / Case: Super D2-Pak	Package: Super D2-Pak	Stock7,456	MOSFET (Metal Oxide)	150V	21A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	SUPER D2-PAK	Super D2-Pak
IRF9Z34NSTRR	Infineon Technologies	MOSFET P-CH 55V 19A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	55V	19A (Tc)	10V	4V @ 250µA	35nC @ 10V	620pF @ 25V	±20V	-	3.8W (Ta), 68W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z24NSTRR	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,000	MOSFET (Metal Oxide)	55V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 45W (Tc)	175 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z24NSTRL	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,024	MOSFET (Metal Oxide)	55V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 45W (Tc)	175 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9540NSTRR	Infineon Technologies	MOSFET P-CH 100V 23A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,400	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 250µA	97nC @ 10V	1300pF @ 25V	±20V	-	3.8W (Ta), 140W (Tc)	117 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9530NSTRR	Infineon Technologies	MOSFET P-CH 100V 14A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,520	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	200 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520NSTRR	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,912	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	480 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520NSTRL	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,060	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 48W (Tc)	480 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9410TR	Infineon Technologies	MOSFET N-CH 30V 7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock97,908	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	550pF @ 25V	±20V	-	2.5W (Ta)	30 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7811TR	Infineon Technologies	MOSFET N-CH 28V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,696	MOSFET (Metal Oxide)	28V	14A (Ta)	4.5V	1V @ 250µA	23nC @ 5V	1800pF @ 16V	±12V	-	3.5W (Ta)	11 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7809TR	Infineon Technologies	MOSFET N-CH 30V 17.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,568	MOSFET (Metal Oxide)	30V	17.6A (Ta)	4.5V	1V @ 250µA	86nC @ 5V	7300pF @ 16V	±12V	-	3.5W (Ta)	7.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7809ATR	Infineon Technologies	MOSFET N-CH 30V 14.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock40,728	MOSFET (Metal Oxide)	30V	14.5A (Ta)	4.5V	1V @ 250µA	75nC @ 5V	7300pF @ 16V	±12V	-	2.5W (Ta)	8.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7807D2TR	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock46,200	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	1V @ 250µA	17nC @ 5V	-	±12V	Schottky Diode (Isolated)	2.5W (Tc)	25 mOhm @ 7A, 4.5V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)