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Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Stock119,100 |
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MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | ±20V | - | 1.8W (Ta) | 35 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 15A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 15A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? SQ
- Package / Case: DirectFET? Isometric SQ
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Package: DirectFET? Isometric SQ |
Stock15,072 |
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MOSFET (Metal Oxide) | 25V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 17nC @ 4.5V | 1450pF @ 13V | ±20V | - | 2.2W (Ta), 34W (Tc) | 6.3 mOhm @ 15A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock117,240 |
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MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 3.1W (Ta), 120W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock139,536 |
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MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1996pF @ 10V | ±20V | - | 87W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 2.6A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock7,088 |
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MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 4.5V, 10V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | ±20V | - | 1.8W (Ta) | 90 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 650V 9A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,264 |
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MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | ±20V | - | 83W (Tc) | 385 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,640 |
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MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | ±20V | Depletion Mode | 1.8W (Ta) | 1.8 Ohm @ 660mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 95A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock110,532 |
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MOSFET (Metal Oxide) | 30V | 20A (Ta), 95A (Tc) | 4.5V, 10V | 2V @ 50µA | 28nC @ 5V | 3660pF @ 15V | ±20V | - | 2.8W (Ta), 62.5W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 6.2A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 34.5 mOhm @ 7.6A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MZ
- Package / Case: DirectFET? Isometric MZ
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Package: DirectFET? Isometric MZ |
Stock47,880 |
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MOSFET (Metal Oxide) | 150V | 6.2A (Ta), 35A (Tc) | 10V | 4.9V @ 150µA | 55nC @ 10V | 2340pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 34.5 mOhm @ 7.6A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MZ | DirectFET? Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock8,436 |
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MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4460pF @ 25V | ±30V | - | 350W (Tc) | 15 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock5,296 |
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MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | ±30V | - | 330W (Tc) | 15 mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3,408 |
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MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | ±20V | - | 230W (Tc) | 5.8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 4.6A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 59.9 mOhm @ 5.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MZ
- Package / Case: DirectFET? Isometric MZ
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Package: DirectFET? Isometric MZ |
Stock7,312 |
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MOSFET (Metal Oxide) | 200V | 4.6A (Ta), 26A (Tc) | 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 59.9 mOhm @ 5.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MZ | DirectFET? Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 25V 15A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 15A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? SQ
- Package / Case: DirectFET? Isometric SQ
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Package: DirectFET? Isometric SQ |
Stock53,760 |
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MOSFET (Metal Oxide) | 25V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 17nC @ 4.5V | 1450pF @ 13V | ±20V | - | 2.2W (Ta), 34W (Tc) | 6.3 mOhm @ 15A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? ST
- Package / Case: DirectFET? Isometric ST
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Package: DirectFET? Isometric ST |
Stock9,648 |
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MOSFET (Metal Oxide) | 20V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17nC @ 4.5V | 1360pF @ 10V | ±20V | - | 1.4W (Ta), 42W (Tc) | 5.7 mOhm @ 15A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
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Infineon Technologies |
MOSFET N-CH 150V 78A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock69,036 |
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MOSFET (Metal Oxide) | 150V | 78A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 4530pF @ 25V | ±30V | - | 310W (Tc) | 15.5 mOhm @ 33A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 24V 429A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 19V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock17,016 |
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MOSFET (Metal Oxide) | 24V | 240A (Tc) | 10V | 4V @ 250µA | 252nC @ 10V | 7700pF @ 19V | ±20V | - | 300W (Tc) | 1 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET P-CH 60V 18.6A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,109,232 |
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MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | ±20V | - | 80W (Tc) | 130 mOhm @ 13.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 8.83A 3TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6.2V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 6.2V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock21,036 |
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MOSFET (Metal Oxide) | 60V | 8.83A (Ta) | 6.2V | 4V @ 250µA | 13nC @ 10V | 420pF @ 25V | ±20V | - | 42W (Tc) | 300 mOhm @ 10A, 6.2V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock420,000 |
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MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 4V @ 1mA | 31.5nC @ 10V | 530pF @ 25V | ±20V | - | 40W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,032 |
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MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3.9V @ 240µA | 26nC @ 10V | 570pF @ 25V | ±20V | - | 63W (Tc) | 1.3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock625,404 |
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MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 5.5V @ 200µA | 22.9nC @ 10V | 580pF @ 25V | ±20V | - | 50W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,880 |
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MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 5.5V @ 135µA | 16nC @ 10V | 420pF @ 25V | ±20V | - | 38W (Tc) | 1.4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 2A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,528 |
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MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.9V @ 120µA | 16nC @ 10V | 290pF @ 100V | ±20V | - | 42W (Tc) | 2.7 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,072 |
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MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 5.5V @ 80µA | 9.5nC @ 10V | 240pF @ 25V | ±20V | - | 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 0.8A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 11W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,152 |
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MOSFET (Metal Oxide) | 650V | 800mA (Tc) | 10V | 3.9V @ 250µA | 5nC @ 10V | 100pF @ 25V | ±20V | - | 11W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock534,000 |
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MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 14 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 20A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,016 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5.5V @ 1mA | 103nC @ 10V | 3000pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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