Page 260 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF7494PBF
Infineon Technologies

MOSFET N-CH 150V 5.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,392
IRFR220NCPBF
Infineon Technologies

MOSFET N-CH 200V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,808
IRLR8721PBF
Infineon Technologies

MOSFET N-CH 30V 65A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,296
IRLR4343-701PBF
Infineon Technologies

MOSFET N-CH 55V 26A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,040
IRF7524D1PBF
Infineon Technologies

MOSFET P-CH 20V 1.7A MICRO-8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock2,048
IRF6215L-103PBF
Infineon Technologies

MOSFET P-CH 150V 13A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,192
IRF7854PBF
Infineon Technologies

MOSFET N-CH 80V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,688
IRFR5505CPBF
Infineon Technologies

MOSFET P-CH 55V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,928
IRFR3303CPBF
Infineon Technologies

MOSFET N-CH 30V 33A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,544
IRLR3410CPBF
Infineon Technologies

MOSFET N-CH 100V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,760
IRL3716SPBF
Infineon Technologies

MOSFET N-CH 20V 180A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,592
IRFR6215CPBF
Infineon Technologies

MOSFET P-CH 150V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,056
IRFU3709Z-701P
Infineon Technologies

MOSFET N-CH 30V 86A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,944
IRL3713SPBF
Infineon Technologies

MOSFET N-CH 30V 260A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,124
IRF7459PBF
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,608
IRF8707PBF
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock13,620
IRFU4104-701PBF
Infineon Technologies

MOSFET N-CH 40V 42A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,920
IRLR7811WCPBF
Infineon Technologies

MOSFET N-CH 30V 64A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock570,024
IRFR5305CPBF
Infineon Technologies

MOSFET P-CH 55V 31A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,216
IRLR7807ZCPBF
Infineon Technologies

MOSFET N-CH 30V 43A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7494PBF	Infineon Technologies	MOSFET N-CH 150V 5.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1783pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,392	MOSFET (Metal Oxide)	150V	5.1A (Ta)	10V	4V @ 250µA	53nC @ 10V	1783pF @ 25V	±20V	-	2.5W (Ta)	44 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR220NCPBF	Infineon Technologies	MOSFET N-CH 200V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,808	MOSFET (Metal Oxide)	200V	5A (Ta)	10V	4V @ 250µA	23nC @ 10V	300pF @ 25V	±20V	-	43W (Tc)	600 mOhm @ 2.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8721PBF	Infineon Technologies	MOSFET N-CH 30V 65A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,296	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	2.35V @ 25µA	13nC @ 4.5V	1030pF @ 15V	±20V	-	65W (Tc)	8.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR4343-701PBF	Infineon Technologies	MOSFET N-CH 55V 26A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,040	MOSFET (Metal Oxide)	55V	26A (Tc)	4.5V, 10V	1V @ 250µA	42nC @ 10V	740pF @ 50V	±20V	-	79W (Tc)	50 mOhm @ 4.7A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7524D1PBF	Infineon Technologies	MOSFET P-CH 20V 1.7A MICRO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock2,048	MOSFET (Metal Oxide)	20V	1.7A (Ta)	2.7V, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	270 mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF6215L-103PBF	Infineon Technologies	MOSFET P-CH 150V 13A TO-262 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,192	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	3.8W (Ta), 110W (Tc)	290 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7854PBF	Infineon Technologies	MOSFET N-CH 80V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,688	MOSFET (Metal Oxide)	80V	10A (Ta)	10V	4.9V @ 100µA	41nC @ 10V	1620pF @ 25V	±20V	-	2.5W (Ta)	13.4 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR5505CPBF	Infineon Technologies	MOSFET P-CH 55V 18A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	55V	18A (Tc)	10V	4V @ 250µA	32nC @ 10V	650pF @ 25V	±20V	-	57W (Tc)	110 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3303CPBF	Infineon Technologies	MOSFET N-CH 30V 33A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,544	MOSFET (Metal Oxide)	30V	33A (Tc)	10V	4V @ 250µA	29nC @ 10V	750pF @ 25V	±20V	-	57W (Tc)	31 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3410CPBF	Infineon Technologies	MOSFET N-CH 100V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,760	MOSFET (Metal Oxide)	100V	17A (Tc)	-	2V @ 250µA	34nC @ 5V	800pF @ 25V	-	-	-	105 mOhm @ 10A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL3716SPBF	Infineon Technologies	MOSFET N-CH 20V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,592	MOSFET (Metal Oxide)	20V	180A (Tc)	4.5V, 10V	3V @ 250µA	79nC @ 4.5V	5090pF @ 10V	±20V	-	210W (Tc)	4 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR6215CPBF	Infineon Technologies	MOSFET P-CH 150V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,056	MOSFET (Metal Oxide)	150V	13A (Tc)	-	4V @ 250µA	66nC @ 10V	860pF @ 25V	-	-	110W (Tc)	295 mOhm @ 6.6A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU3709Z-701P	Infineon Technologies	MOSFET N-CH 30V 86A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,944	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.25V @ 250µA	26nC @ 4.5V	2330pF @ 15V	±20V	-	79W (Tc)	6.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRL3713SPBF	Infineon Technologies	MOSFET N-CH 30V 260A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,124	MOSFET (Metal Oxide)	30V	260A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 4.5V	5890pF @ 15V	±20V	-	330W (Tc)	3 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7459PBF	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,608	MOSFET (Metal Oxide)	20V	12A (Ta)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2480pF @ 10V	±12V	-	2.5W (Ta)	9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF8707PBF	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock13,620	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.35V @ 25µA	9.3nC @ 4.5V	760pF @ 15V	±20V	-	2.5W (Ta)	11.9 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFU4104-701PBF	Infineon Technologies	MOSFET N-CH 40V 42A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,920	MOSFET (Metal Oxide)	40V	42A (Tc)	10V	4V @ 250µA	89nC @ 10V	2950pF @ 25V	±20V	-	140W (Tc)	5.5 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRLR7811WCPBF	Infineon Technologies	MOSFET N-CH 30V 64A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock570,024	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	2.5V @ 250µA	31nC @ 4.5V	2260pF @ 15V	±12V	-	71W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5305CPBF	Infineon Technologies	MOSFET P-CH 55V 31A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,216	MOSFET (Metal Oxide)	55V	31A (Tc)	10V	4V @ 250µA	63nC @ 10V	1200pF @ 25V	±20V	-	110W (Tc)	65 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR7807ZCPBF	Infineon Technologies	MOSFET N-CH 30V 43A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	30V	43A (Tc)	4.5V, 10V	2.25V @ 250µA	11nC @ 4.5V	780pF @ 15V	±20V	-	40W (Tc)	13.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR120NCPBF	Infineon Technologies	MOSFET N-CH 100V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,896	MOSFET (Metal Oxide)	100V	9.4A (Ta)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	48W (Tc)	210 mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7534D1PBF	Infineon Technologies	MOSFET P-CH 20V 4.3A MICRO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock2,592	MOSFET (Metal Oxide)	20V	4.3A (Ta)	2.5V, 4.5V	1.2V @ 250µA	15nC @ 5V	1066pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	55 mOhm @ 4.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRFR3706CPBF	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,888	MOSFET (Metal Oxide)	20V	75A (Tc)	2.8V, 10V	2V @ 250µA	35nC @ 4.5V	2410pF @ 10V	±12V	-	88W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD135N03LGXT	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,480	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.2V @ 250µA	10nC @ 10V	1000pF @ 15V	±20V	-	31W (Tc)	13.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD105N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 35A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,328	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	14nC @ 10V	1500pF @ 15V	±20V	-	38W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC100N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 44A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,376	MOSFET (Metal Oxide)	30V	13A (Ta), 44A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 10V	1500pF @ 15V	±20V	-	2.5W (Ta), 30W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPP04CN10NG	Infineon Technologies	MOSFET N-CH 100V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,936	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	4V @ 250µA	210nC @ 10V	13800pF @ 50V	±20V	-	300W (Tc)	4.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRF7663TRPBF	Infineon Technologies	MOSFET P-CH 20V 8.2A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock4,896	MOSFET (Metal Oxide)	20V	8.2A (Ta)	2.5V, 4.5V	1.2V @ 250µA	45nC @ 5V	2520pF @ 10V	±12V	-	1.8W (Ta)	20 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)