Page 266 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF7700GTRPBF
Infineon Technologies

MOSFET P-CH 20V 8.6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock4,640
IRF6785MTR1PBF
Infineon Technologies

MOSFET N-CH 200V 3.4A DIRECTFET

Package: DirectFET? Isometric MZ

Stock4,144
IRF6775MTR1PBF
Infineon Technologies

MOSFET N-CH 150V 4.9A DIRECTFET

Package: DirectFET? Isometric MZ

Stock21,120
IRF6727MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

Package: DirectFET? Isometric MX

Stock3,184
IRF6726MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

Package: DirectFET? Isometric MT

Stock18,132
IRF6725MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 28A DIRECTFET

Package: DirectFET? Isometric MX

Stock6,656
IRF6724MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

Package: DirectFET? Isometric MX

Stock6,512
IRF6722STR1PBF
Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

Package: DirectFET? Isometric ST

Stock2,000
IRF6722MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

Package: DirectFET? Isometric MP

Stock3,744
IRF6721STR1PBF
Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

Package: DirectFET? Isometric SQ

Stock6,432
IRF6716MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 39A DIRECTFET

Package: DirectFET? Isometric MX

Stock4,240
IRF6715MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 34A DIRECTFET

Package: DirectFET? Isometric MX

Stock2,256
IRF6714MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 29A DIRECTFET

Package: DirectFET? Isometric MX

Stock7,472
IRF6712STR1PBF
Infineon Technologies

MOSFET N-CH 25V 17A DIRECTFET

Package: DirectFET? Isometric SQ

Stock2,000
IRF6710S2TR1PBF
Infineon Technologies

MOSFET N-CH 25V 12A DIRECTFET

Package: DirectFET? Isometric S1

Stock52,068
IRF6674TR1PBF
Infineon Technologies

MOSFET N-CH 60V 13.4A DIRECTFET

Package: DirectFET? Isometric MZ

Stock4,432
64-2096PBF
Infineon Technologies

MOSFET N-CH 75V 160A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock66,000
IRLU8721-701PBF
Infineon Technologies

MOSFET N-CH 30V 65A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,000
IRLU3114ZPBF
Infineon Technologies

MOSFET N-CH 40V 42A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock18,288
IRFU3806PBF
Infineon Technologies

MOSFET N-CH 60V 43A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock180,744

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7700GTRPBF	Infineon Technologies	MOSFET P-CH 20V 8.6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock4,640	MOSFET (Metal Oxide)	20V	8.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	89nC @ 5V	4300pF @ 15V	±12V	-	1.5W (Ta)	15 mOhm @ 8.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF6785MTR1PBF	Infineon Technologies	MOSFET N-CH 200V 3.4A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock4,144	MOSFET (Metal Oxide)	200V	3.4A (Ta), 19A (Tc)	10V	5V @ 100µA	36nC @ 10V	1500pF @ 25V	±20V	-	2.8W (Ta), 57W (Tc)	100 mOhm @ 4.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
IRF6775MTR1PBF	Infineon Technologies	MOSFET N-CH 150V 4.9A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1411pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 5.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock21,120	MOSFET (Metal Oxide)	150V	4.9A (Ta), 28A (Tc)	10V	5V @ 100µA	36nC @ 10V	1411pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	56 mOhm @ 5.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
IRF6727MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock3,184	MOSFET (Metal Oxide)	30V	32A (Ta), 180A (Tc)	4.5V, 10V	2.35V @ 100µA	74nC @ 4.5V	6190pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	1.7 mOhm @ 32A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6726MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock18,132	MOSFET (Metal Oxide)	30V	32A (Ta), 180A (Tc)	4.5V, 10V	2.35V @ 150µA	77nC @ 4.5V	6140pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	1.7 mOhm @ 32A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRF6725MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 28A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock6,656	MOSFET (Metal Oxide)	30V	28A (Ta), 170A (Tc)	4.5V, 10V	2.35V @ 100µA	54nC @ 4.5V	4700pF @ 15V	±20V	-	2.8W (Ta), 100W (Tc)	2.2 mOhm @ 28A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6724MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock6,512	MOSFET (Metal Oxide)	30V	27A (Ta), 150A (Tc)	4.5V, 10V	2.35V @ 100µA	54nC @ 4.5V	4404pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.5 mOhm @ 27A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6722STR1PBF	Infineon Technologies	MOSFET N-CH 30V 13A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock2,000	MOSFET (Metal Oxide)	30V	13A (Ta), 58A (Tc)	4.5V, 10V	2.4V @ 50µA	17nC @ 4.5V	1320pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	7.3 mOhm @ 13A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRF6722MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 13A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 13A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MP Package / Case: DirectFET? Isometric MP	Package: DirectFET? Isometric MP	Stock3,744	MOSFET (Metal Oxide)	30V	13A (Ta), 56A (Tc)	4.5V, 10V	2.4V @ 50µA	17nC @ 4.5V	1300pF @ 15V	±20V	-	2.3W (Ta), 42W (Tc)	7.7 mOhm @ 13A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MP	DirectFET? Isometric MP
IRF6721STR1PBF	Infineon Technologies	MOSFET N-CH 30V 14A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock6,432	MOSFET (Metal Oxide)	30V	14A (Ta), 60A (Tc)	4.5V, 10V	2.4V @ 25µA	17nC @ 4.5V	1430pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	7.3 mOhm @ 14A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
IRF6716MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 39A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock4,240	MOSFET (Metal Oxide)	25V	39A (Ta), 180A (Tc)	4.5V, 10V	2.4V @ 100µA	59nC @ 4.5V	5150pF @ 13V	±20V	-	3.6W (Ta), 78W (Tc)	1.6 mOhm @ 40A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6715MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 34A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock2,256	MOSFET (Metal Oxide)	25V	34A (Ta), 180A (Tc)	4.5V, 10V	2.4V @ 100µA	59nC @ 4.5V	5340pF @ 13V	±20V	-	2.8W (Ta), 78W (Tc)	1.6 mOhm @ 34A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6714MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 29A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock7,472	MOSFET (Metal Oxide)	25V	29A (Ta), 166A (Tc)	4.5V, 10V	2.4V @ 100µA	44nC @ 4.5V	3890pF @ 13V	±20V	-	2.8W (Ta), 89W (Tc)	2.1 mOhm @ 29A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6712STR1PBF	Infineon Technologies	MOSFET N-CH 25V 17A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock2,000	MOSFET (Metal Oxide)	25V	17A (Ta), 68A (Tc)	4.5V, 10V	2.4V @ 50µA	18nC @ 4.5V	1570pF @ 13V	±20V	-	2.2W (Ta), 36W (Tc)	4.9 mOhm @ 17A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
IRF6710S2TR1PBF	Infineon Technologies	MOSFET N-CH 25V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET? Isometric S1	Package: DirectFET? Isometric S1	Stock52,068	MOSFET (Metal Oxide)	25V	12A (Ta), 37A (Tc)	4.5V, 10V	2.4V @ 25µA	13nC @ 4.5V	1190pF @ 13V	±20V	-	1.8W (Ta), 15W (Tc)	5.9 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET S1	DirectFET? Isometric S1
IRF6674TR1PBF	Infineon Technologies	MOSFET N-CH 60V 13.4A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock4,432	MOSFET (Metal Oxide)	60V	13.4A (Ta), 67A (Tc)	10V	4.9V @ 100µA	36nC @ 10V	1350pF @ 25V	±20V	-	3.6W (Ta), 89W (Tc)	11 mOhm @ 13.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
64-2096PBF	Infineon Technologies	MOSFET N-CH 75V 160A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock66,000	MOSFET (Metal Oxide)	75V	160A (Tc)	10V	4V @ 250µA	260nC @ 10V	7580pF @ 25V	±20V	-	300W (Tc)	3.8 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRLU8721-701PBF	Infineon Technologies	MOSFET N-CH 30V 65A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,000	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	2.35V @ 25µA	13nC @ 4.5V	1030pF @ 15V	±20V	-	65W (Tc)	8.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLU3114ZPBF	Infineon Technologies	MOSFET N-CH 40V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock18,288	MOSFET (Metal Oxide)	40V	42A (Tc)	4.5V, 10V	2.5V @ 100µA	56nC @ 4.5V	3810pF @ 25V	±16V	-	140W (Tc)	4.9 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFU3806PBF	Infineon Technologies	MOSFET N-CH 60V 43A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock180,744	MOSFET (Metal Oxide)	60V	43A (Tc)	10V	4V @ 50µA	30nC @ 10V	1150pF @ 50V	±20V	-	71W (Tc)	15.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFU2607ZPBF	Infineon Technologies	MOSFET N-CH 75V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,872	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 50µA	51nC @ 10V	1440pF @ 25V	±20V	-	110W (Tc)	22 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFU2307ZPBF	Infineon Technologies	MOSFET N-CH 75V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock44,400	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 100µA	75nC @ 10V	2190pF @ 25V	±20V	-	110W (Tc)	16 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFU1018EPBF	Infineon Technologies	MOSFET N-CH 60V 56A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,000	MOSFET (Metal Oxide)	60V	56A (Tc)	10V	4V @ 100µA	69nC @ 10V	2290pF @ 50V	±20V	-	110W (Tc)	8.4 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFSL4410PBF	Infineon Technologies	MOSFET N-CH 100V 88A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,640	MOSFET (Metal Oxide)	100V	88A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	200W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4227PBF	Infineon Technologies	MOSFET N-CH 200V 62A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,736	MOSFET (Metal Oxide)	200V	62A (Tc)	10V	5V @ 250µA	98nC @ 10V	4600pF @ 25V	±30V	-	330W (Tc)	26 mOhm @ 46A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF2903ZLPBF	Infineon Technologies	MOSFET N-CH 30V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,224	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 150µA	240nC @ 10V	6320pF @ 25V	±20V	-	231W (Tc)	2.4 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
64-2105PBF	Infineon Technologies	MOSFET N-CH 40V 120A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,168	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 250µA	150nC @ 10V	4340pF @ 25V	±20V	-	200W (Tc)	3.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF1018ESLPBF	Infineon Technologies	MOSFET N-CH 60V 79A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock541,200	MOSFET (Metal Oxide)	60V	79A (Tc)	10V	4V @ 100µA	69nC @ 10V	2290pF @ 50V	±20V	-	110W (Tc)	8.4 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA