Page 269 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

BSS131L6327HTSA1
Infineon Technologies

MOSFET N-CH 240V .11A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,272
IRF7703TRPBF
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock4,256
IRF7702TRPBF
Infineon Technologies

MOSFET P-CH 12V 8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,904
IRF6720S2TR1PBF
Infineon Technologies

MOSFET N-CH 30V 11A DIRECTFET

Package: DirectFET? Isometric S1

Stock2,736
IRF6633ATR1PBF
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET

Package: DirectFET? Isometric MU

Stock2,928
IRF6795MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 32A DIRECTFET

Package: DirectFET? Isometric MX

Stock24,000
IRF6713STR1PBF
Infineon Technologies

MOSFET N-CH 25V 22A DIRECTFET

Package: DirectFET? Isometric SQ

Stock2,320
IRF6797MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 36A DIRECTFET

Package: DirectFET? Isometric MX

Stock6,624
IRF7705GTRPBF
Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock7,488
IRF7704GTRPBF
Infineon Technologies

MOSFET P-CH 40V 4.6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock7,936
IRF7707GTRPBF
Infineon Technologies

MOSFET P-CH 20V 7A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,584
IRF7706GTRPBF
Infineon Technologies

MOSFET P-CH 30V 7A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,392
IRFS4010PBF
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,840
IRFS4010-7PPBF
Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock9,600
BS7067N06LS3G
Infineon Technologies

MOSFET N-CH 60V 20A TSDSON-8

Package: 8-PowerVDFN

Stock4,352
IRF6710S2TRPBF
Infineon Technologies

MOSFET N-CH 25V 12A DIRECTFET

Package: DirectFET? Isometric S1

Stock63,216
IRF6722MTRPBF
Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

Package: DirectFET? Isometric MP

Stock5,136
IRF6722STRPBF
Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

Package: DirectFET? Isometric ST

Stock4,864
IRF6100PBF
Infineon Technologies

MOSFET P-CH 20V 5.1A FLIPFET

Package: 4-FlipFet?

Stock7,968
IRFR3418TRPBF
Infineon Technologies

MOSFET N-CH 80V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,152

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS131L6327HTSA1	Infineon Technologies	MOSFET N-CH 240V .11A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,272	MOSFET (Metal Oxide)	240V	110mA (Ta)	4.5V, 10V	1.8V @ 56µA	3.1nC @ 10V	77pF @ 25V	±20V	-	360mW (Ta)	14 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRF7703TRPBF	Infineon Technologies	MOSFET P-CH 40V 6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock4,256	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	3V @ 250µA	62nC @ 4.5V	5220pF @ 25V	±20V	-	1.5W (Ta)	28 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7702TRPBF	Infineon Technologies	MOSFET P-CH 12V 8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,904	MOSFET (Metal Oxide)	12V	8A (Tc)	1.8V, 4.5V	1.2V @ 250µA	81nC @ 4.5V	3470pF @ 10V	±8V	-	1.5W (Tc)	14 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF6720S2TR1PBF	Infineon Technologies	MOSFET N-CH 30V 11A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET? Isometric S1	Package: DirectFET? Isometric S1	Stock2,736	MOSFET (Metal Oxide)	30V	11A (Ta), 35A (Tc)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1140pF @ 15V	±20V	-	1.7W (Ta), 17W (Tc)	8 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET S1	DirectFET? Isometric S1
IRF6633ATR1PBF	Infineon Technologies	MOSFET N-CH 20V 16A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MU Package / Case: DirectFET? Isometric MU	Package: DirectFET? Isometric MU	Stock2,928	MOSFET (Metal Oxide)	20V	16A (Ta), 69A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 4.5V	1410pF @ 10V	±20V	-	2.3W (Ta), 42W (Tc)	5.6 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MU	DirectFET? Isometric MU
IRF6795MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock24,000	MOSFET (Metal Oxide)	25V	32A (Ta), 160A (Tc)	4.5V, 10V	2.35V @ 100µA	53nC @ 4.5V	4280pF @ 13V	±20V	-	2.8W (Ta), 75W (Tc)	1.8 mOhm @ 32A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6713STR1PBF	Infineon Technologies	MOSFET N-CH 25V 22A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock2,320	MOSFET (Metal Oxide)	25V	22A (Ta), 95A (Tc)	4.5V, 10V	2.4V @ 50µA	32nC @ 4.5V	2880pF @ 13V	±20V	-	2.2W (Ta), 42W (Tc)	3 mOhm @ 22A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
IRF6797MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 36A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 38A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock6,624	MOSFET (Metal Oxide)	25V	36A (Ta), 210A (Tc)	4.5V, 10V	2.35V @ 150µA	68nC @ 4.5V	5790pF @ 13V	±20V	-	2.8W (Ta), 89W (Tc)	1.4 mOhm @ 38A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF7705GTRPBF	Infineon Technologies	MOSFET P-CH 30V 8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock7,488	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	2.5V @ 250µA	88nC @ 10V	2774pF @ 25V	±20V	-	1.5W (Ta)	18 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7704GTRPBF	Infineon Technologies	MOSFET P-CH 40V 4.6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock7,936	MOSFET (Metal Oxide)	40V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 4.5V	3150pF @ 25V	±20V	-	1.5W (Ta)	46 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7707GTRPBF	Infineon Technologies	MOSFET P-CH 20V 7A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,584	MOSFET (Metal Oxide)	20V	7A (Ta)	2.5V, 4.5V	1.2V @ 250µA	47nC @ 4.5V	2361pF @ 15V	±12V	-	1.5W (Ta)	22 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF7706GTRPBF	Infineon Technologies	MOSFET P-CH 30V 7A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.51W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,392	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	2211pF @ 25V	±20V	-	1.51W (Ta)	22 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRFS4010PBF	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,840	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 250µA	215nC @ 10V	9575pF @ 50V	±20V	-	375W (Tc)	4.7 mOhm @ 106A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4010-7PPBF	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9830pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock9,600	MOSFET (Metal Oxide)	100V	190A (Tc)	10V	4V @ 250µA	230nC @ 10V	9830pF @ 50V	±20V	-	380W (Tc)	4 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BS7067N06LS3G	Infineon Technologies	MOSFET N-CH 60V 20A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,352	MOSFET (Metal Oxide)	60V	14A (Ta), 20A (Tc)	4.5V, 10V	2.2V @ 35µA	62nC @ 10V	4800pF @ 30V	±20V	-	2.1W (Ta), 78W (Tc)	6.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerVDFN
IRF6710S2TRPBF	Infineon Technologies	MOSFET N-CH 25V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET? Isometric S1	Package: DirectFET? Isometric S1	Stock63,216	MOSFET (Metal Oxide)	25V	12A (Ta), 37A (Tc)	4.5V, 10V	2.4V @ 25µA	13nC @ 4.5V	1190pF @ 13V	±20V	-	1.8W (Ta), 15W (Tc)	5.9 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET S1	DirectFET? Isometric S1
IRF6722MTRPBF	Infineon Technologies	MOSFET N-CH 30V 13A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 13A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MP Package / Case: DirectFET? Isometric MP	Package: DirectFET? Isometric MP	Stock5,136	MOSFET (Metal Oxide)	30V	13A (Ta), 56A (Tc)	4.5V, 10V	2.4V @ 50µA	17nC @ 4.5V	1300pF @ 15V	±20V	-	2.3W (Ta), 42W (Tc)	7.7 mOhm @ 13A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MP	DirectFET? Isometric MP
IRF6722STRPBF	Infineon Technologies	MOSFET N-CH 30V 13A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock4,864	MOSFET (Metal Oxide)	30V	13A (Ta), 58A (Tc)	4.5V, 10V	2.4V @ 50µA	17nC @ 4.5V	1320pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	7.3 mOhm @ 13A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRF6100PBF	Infineon Technologies	MOSFET P-CH 20V 5.1A FLIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-FlipFet? Package / Case: 4-FlipFet?	Package: 4-FlipFet?	Stock7,968	MOSFET (Metal Oxide)	20V	5.1A (Ta)	2.5V, 4.5V	1.2V @ 250µA	21nC @ 5V	1230pF @ 15V	±12V	-	2.2W (Ta)	65 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-FlipFet?	4-FlipFet?
IRFR3418TRPBF	Infineon Technologies	MOSFET N-CH 80V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,152	MOSFET (Metal Oxide)	80V	70A (Tc)	10V	5.5V @ 250µA	94nC @ 10V	3510pF @ 25V	±20V	-	3.8W (Ta), 140W (Tc)	14 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF2804STRR7PP	Infineon Technologies	MOSFET N-CH 40V 160A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,824	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	4V @ 250µA	260nC @ 10V	6930pF @ 25V	±20V	-	330W (Tc)	1.6 mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRFR3412TRPBF	Infineon Technologies	MOSFET N-CH 100V 48A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,096	MOSFET (Metal Oxide)	100V	48A (Tc)	10V	5.5V @ 250µA	89nC @ 10V	3430pF @ 25V	±20V	-	140W (Tc)	25 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR12N25DTRPBF	Infineon Technologies	MOSFET N-CH 250V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock121,200	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	5V @ 250µA	35nC @ 10V	810pF @ 25V	±30V	-	144W (Tc)	260 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707ZCTRLP	Infineon Technologies	MOSFET N-CH 30V 56A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,712	MOSFET (Metal Oxide)	30V	56A (Tc)	4.5V, 10V	2.25V @ 25µA	14nC @ 4.5V	1150pF @ 15V	±20V	-	50W (Tc)	9.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF6607TR1	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock14,196	MOSFET (Metal Oxide)	30V	27A (Ta), 94A (Tc)	4.5V, 7V	2V @ 250µA	75nC @ 4.5V	6930pF @ 15V	±12V	-	3.6W (Ta), 42W (Tc)	3.3 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRF6603TR1	Infineon Technologies	MOSFET N-CH 30V 27A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V Vgs (Max): +20V, -12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock13,524	MOSFET (Metal Oxide)	30V	27A (Ta), 92A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 4.5V	6590pF @ 15V	+20V, -12V	-	3.6W (Ta), 42W (Tc)	3.4 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRLR3715TRPBF	Infineon Technologies	MOSFET N-CH 20V 54A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock12,360	MOSFET (Metal Oxide)	20V	54A (Tc)	4.5V, 10V	3V @ 250µA	17nC @ 4.5V	1060pF @ 10V	±20V	-	3.8W (Ta), 71W (Tc)	14 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR024ZTRLPBF	Infineon Technologies	MOSFET N-CH 55V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock35,940	MOSFET (Metal Oxide)	55V	16A (Tc)	4.5V, 10V	3V @ 250µA	9.9nC @ 5V	380pF @ 25V	±16V	-	35W (Tc)	58 mOhm @ 9.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63