Page 282 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF7811WGTRPBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock39,336
IRF7524D1GTRPBF
Infineon Technologies

MOSFET P-CH 20V 1.7A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock111,348
IRF7424GTRPBF
Infineon Technologies

MOSFET P-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock206,868
IRF7413ZGTRPBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,920
IRF7413GTRPBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock94,800
IRF7406GTRPBF
Infineon Technologies

MOSFET P-CH 30V 6.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock141,936
IRF7220GTRPBF
Infineon Technologies

MOSFET P-CH 14V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,984
IRF6798MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 37A DIRECTFET-MX

Package: DirectFET? Isometric MX

Stock16,800
IRF6711STR1PBF
Infineon Technologies

MOSFET N-CH 25V 19A DIRECTFET-SQ

Package: DirectFET? Isometric SQ

Stock2,688
IRF6709S2TR1PBF
Infineon Technologies

MOSFET N-CH 25V 12A DIRECTFET-S1

Package: DirectFET? Isometric S1

Stock9,696
IRF1405ZSTRL7PP
Infineon Technologies

MOSFET N-CH 55V 150A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock6,608
IRLU8729-701PBF
Infineon Technologies

MOSFET N-CH 30V 58A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,960
IRLU8726PBF
Infineon Technologies

MOSFET N-CH 30V 86A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock253,524
IRLB3036GPBF
Infineon Technologies

MOSFET N-CH 60V 195A TO-220AB

Package: TO-220-3

Stock434,940
IRFSL4229PBF
Infineon Technologies

MOSFET N-CH 250V 45A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock33,000
IRFB4310ZGPBF
Infineon Technologies

MOSFET N-CH 100V 120A TO-220AB

Package: TO-220-3

Stock45,360
IRFB4310GPBF
Infineon Technologies

MOSFET N-CH 100V 130A TO-220AB

Package: TO-220-3

Stock103,464
IRFB3077GPBF
Infineon Technologies

MOSFET N-CH 75V 120A TO-220AB

Package: TO-220-3

Stock7,968
IRF9204PBF
Infineon Technologies

MOSFET P-CH 40V 74A TO-220AB

Package: TO-220-3

Stock7,120
IPD600N25N3GBTMA1
Infineon Technologies

MOSFET N-CH 250V 25A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,896

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7811WGTRPBF	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock39,336	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V	1V @ 250µA	33nC @ 5V	2335pF @ 16V	±12V	-	3.1W (Ta)	12 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7524D1GTRPBF	Infineon Technologies	MOSFET P-CH 20V 1.7A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-uSMD Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock111,348	MOSFET (Metal Oxide)	20V	1.7A (Ta)	2.7V, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	270 mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-uSMD	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF7424GTRPBF	Infineon Technologies	MOSFET P-CH 30V 11A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock206,868	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	110nC @ 10V	4030pF @ 25V	±20V	-	2.5W (Ta)	13.5 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7413ZGTRPBF	Infineon Technologies	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,920	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.25V @ 25µA	14nC @ 4.5V	1210pF @ 15V	±20V	-	2.5W (Ta)	10 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7413GTRPBF	Infineon Technologies	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock94,800	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	3V @ 250µA	79nC @ 10V	1800pF @ 25V	±20V	-	2.5W (Ta)	11 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7406GTRPBF	Infineon Technologies	MOSFET P-CH 30V 6.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock141,936	MOSFET (Metal Oxide)	30V	5.8A (Ta)	4.5V, 10V	1V @ 250µA	59nC @ 10V	1100pF @ 25V	±20V	-	2.5W (Ta)	45 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7220GTRPBF	Infineon Technologies	MOSFET P-CH 14V 11A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,984	MOSFET (Metal Oxide)	14V	11A (Ta)	2.5V, 4.5V	600mV @ 250µA	125nC @ 5V	8075pF @ 10V	±12V	-	2.5W (Ta)	12 mOhm @ 11A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF6798MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 37A DIRECTFET-MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 13V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 37A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock16,800	MOSFET (Metal Oxide)	25V	37A (Ta), 197A (Tc)	4.5V, 10V	2.35V @ 150µA	75nC @ 4.5V	6560pF @ 13V	±20V	Schottky Diode (Body)	2.8W (Ta), 78W (Tc)	1.3 mOhm @ 37A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6711STR1PBF	Infineon Technologies	MOSFET N-CH 25V 19A DIRECTFET-SQ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock2,688	MOSFET (Metal Oxide)	25V	19A (Ta), 84A (Tc)	4.5V, 10V	2.35V @ 25µA	20nC @ 4.5V	1810pF @ 13V	±20V	-	2.2W (Ta), 42W (Tc)	3.8 mOhm @ 19A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
IRF6709S2TR1PBF	Infineon Technologies	MOSFET N-CH 25V 12A DIRECTFET-S1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET? Isometric S1	Package: DirectFET? Isometric S1	Stock9,696	MOSFET (Metal Oxide)	25V	12A (Ta), 39A (Tc)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1010pF @ 13V	±20V	-	1.8W (Ta), 21W (Tc)	7.8 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET S1	DirectFET? Isometric S1
IRF1405ZSTRL7PP	Infineon Technologies	MOSFET N-CH 55V 150A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,608	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 150µA	230nC @ 10V	5360pF @ 25V	±20V	-	230W (Tc)	4.9 mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRLU8729-701PBF	Infineon Technologies	MOSFET N-CH 30V 58A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,960	MOSFET (Metal Oxide)	30V	58A (Tc)	4.5V, 10V	2.35V @ 25µA	16nC @ 4.5V	1350pF @ 15V	±20V	-	55W (Tc)	8.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLU8726PBF	Infineon Technologies	MOSFET N-CH 30V 86A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock253,524	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.35V @ 50µA	23nC @ 4.5V	2150pF @ 15V	±20V	-	75W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRLB3036GPBF	Infineon Technologies	MOSFET N-CH 60V 195A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock434,940	MOSFET (Metal Oxide)	60V	195A (Tc)	4.5V, 10V	2.5V @ 250µA	140nC @ 4.5V	11210pF @ 50V	±16V	-	380W (Tc)	2.4 mOhm @ 165A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFSL4229PBF	Infineon Technologies	MOSFET N-CH 250V 45A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock33,000	MOSFET (Metal Oxide)	250V	45A (Tc)	10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	±30V	-	330W (Tc)	48 mOhm @ 26A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFB4310ZGPBF	Infineon Technologies	MOSFET N-CH 100V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock45,360	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6860pF @ 50V	±20V	-	250W (Tc)	6 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB4310GPBF	Infineon Technologies	MOSFET N-CH 100V 130A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4V @ 250µA	250nC @ 10V	7670pF @ 50V	±20V	-	300W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB3077GPBF	Infineon Technologies	MOSFET N-CH 75V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,968	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	220nC @ 10V	9400pF @ 50V	±20V	-	370W (Tc)	3.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9204PBF	Infineon Technologies	MOSFET P-CH 40V 74A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7676pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,120	MOSFET (Metal Oxide)	40V	56A (Ta)	4.5V, 10V	3V @ 100µA	224nC @ 10V	7676pF @ 25V	±20V	-	143W (Tc)	16 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD600N25N3GBTMA1	Infineon Technologies	MOSFET N-CH 250V 25A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,896	MOSFET (Metal Oxide)	250V	25A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD110N12N3GBUMA1	Infineon Technologies	MOSFET N-CH 120V 75A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,552	MOSFET (Metal Oxide)	120V	75A (Tc)	10V	4V @ 83µA	65nC @ 10V	4310pF @ 60V	±20V	-	136W (Tc)	11 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB60R600CPATMA1	Infineon Technologies	MOSFET N-CH 600V 6.1A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,288	MOSFET (Metal Oxide)	600V	6.1A (Tc)	10V	3.5V @ 220µA	27nC @ 10V	550pF @ 100V	±20V	-	60W (Tc)	600 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB034N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,048	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 93µA	130nC @ 10V	11000pF @ 30V	±20V	-	167W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPB021N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,304	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 196µA	275nC @ 10V	23000pF @ 30V	±20V	-	250W (Tc)	2.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPD30N03S2L07GBTMA1	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,688	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 85µA	68nC @ 10V	2530pF @ 25V	±20V	-	136W (Tc)	6.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPS118N10N G	Infineon Technologies	MOSFET N-CH 100V 75A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,320	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4V @ 83µA	65nC @ 10V	4320pF @ 50V	±20V	-	125W (Tc)	11.8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
IPP90N06S4L04AKSA1	Infineon Technologies	MOSFET N-CH 60V 90A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,496	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.2V @ 90µA	170nC @ 10V	13000pF @ 25V	±16V	-	150W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP90N06S404AKSA1	Infineon Technologies	MOSFET N-CH 60V 90A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,296	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4V @ 90µA	128nC @ 10V	10400pF @ 25V	±20V	-	150W (Tc)	4 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3