Page 283 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF6665
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-SH

Package: DirectFET? Isometric SH

Stock85,140
IRF6655TR1
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-SH

Package: DirectFET? Isometric SH

Stock3,840
IRF6645
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-SJ

Package: DirectFET? Isometric SJ

Stock6,560
IRF6644TR1
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-MN

Package: DirectFET? Isometric MN

Stock5,664
IRF6644
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-MN

Package: DirectFET? Isometric MN

Stock61,140
IRF6633TR1
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET-MP

Package: DirectFET? Isometric MP

Stock16,812
IRF6633ATRPBF
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET-MU

Package: DirectFET? Isometric MU

Stock15,756
IRF6614TR1
Infineon Technologies

MOSFET N-CH 40V DIRECTFET-ST

Package: DirectFET? Isometric ST

Stock5,744
IRF6614
Infineon Technologies

MOSFET N-CH 40V DIRECTFET-ST

Package: DirectFET? Isometric ST

Stock7,744
IRF6613TR1
Infineon Technologies

MOSFET N-CH 40V DIRECTFET-MT

Package: DirectFET? Isometric MT

Stock2,000
IRF1405ZL-7PPBF
Infineon Technologies

MOSFET N-CH 55V 150A TO263CA-7

Package: TO-263-7 (Straight Leads)

Stock2,704
IRFH5303TRPBF
Infineon Technologies

MOSFET N-CH 30V 82A 8-PQFN

Package: 8-PowerVDFN

Stock2,384
IRFH5207TRPBF
Infineon Technologies

MOSFET N-CH 75V 13A 8-PQFN

Package: 8-PowerVDFN

Stock367,128
IRFH5106TRPBF
Infineon Technologies

MOSFET N-CH 60V 21A 8-PQFN

Package: 8-PowerVDFN

Stock61,512
IRF9393PBF
Infineon Technologies

MOSFET P-CH 30V 9.2A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,888
IRF9388PBF
Infineon Technologies

MOSFET P-CH 30V 12A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,264
IRF9335PBF
Infineon Technologies

MOSFET P-CH 30V 5.4A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,408
IRF9333PBF
Infineon Technologies

MOSFET P-CH 30V 9.2A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,672
IRF9328PBF
Infineon Technologies

MOSFET P-CH 30V 12A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,656
IRF9321PBF
Infineon Technologies

MOSFET P-CH 30V 15A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,152

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6665	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-SH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SH Package / Case: DirectFET? Isometric SH	Package: DirectFET? Isometric SH	Stock85,140	MOSFET (Metal Oxide)	100V	4.2A (Ta), 19A (Tc)	10V	5V @ 250µA	13nC @ 10V	530pF @ 25V	±20V	-	2.2W (Ta), 42W (Tc)	62 mOhm @ 5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SH	DirectFET? Isometric SH
IRF6655TR1	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-SH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SH Package / Case: DirectFET? Isometric SH	Package: DirectFET? Isometric SH	Stock3,840	MOSFET (Metal Oxide)	100V	4.2A (Ta), 19A (Tc)	10V	4.8V @ 25µA	11.7nC @ 10V	530pF @ 25V	±20V	-	2.2W (Ta), 42W (Tc)	62 mOhm @ 5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SH	DirectFET? Isometric SH
IRF6645	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-SJ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SJ Package / Case: DirectFET? Isometric SJ	Package: DirectFET? Isometric SJ	Stock6,560	MOSFET (Metal Oxide)	100V	5.7A (Ta), 25A (Tc)	10V	4.9V @ 50µA	20nC @ 10V	890pF @ 25V	±20V	-	3W (Ta), 42W (Tc)	35 mOhm @ 5.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SJ	DirectFET? Isometric SJ
IRF6644TR1	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-MN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MN Package / Case: DirectFET? Isometric MN	Package: DirectFET? Isometric MN	Stock5,664	MOSFET (Metal Oxide)	100V	10.3A (Ta), 60A (Tc)	10V	4.8V @ 150µA	47nC @ 10V	2210pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	13 mOhm @ 10.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN	DirectFET? Isometric MN
IRF6644	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-MN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MN Package / Case: DirectFET? Isometric MN	Package: DirectFET? Isometric MN	Stock61,140	MOSFET (Metal Oxide)	100V	10.3A (Ta), 60A (Tc)	10V	4.8V @ 150µA	47nC @ 10V	2210pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	13 mOhm @ 10.3A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN	DirectFET? Isometric MN
IRF6633TR1	Infineon Technologies	MOSFET N-CH 20V 16A DIRECTFET-MP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MP Package / Case: DirectFET? Isometric MP	Package: DirectFET? Isometric MP	Stock16,812	MOSFET (Metal Oxide)	20V	16A (Ta), 59A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 4.5V	1250pF @ 10V	±20V	-	2.3W (Ta), 42W (Tc)	5.6 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MP	DirectFET? Isometric MP
IRF6633ATRPBF	Infineon Technologies	MOSFET N-CH 20V 16A DIRECTFET-MU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MU Package / Case: DirectFET? Isometric MU	Package: DirectFET? Isometric MU	Stock15,756	MOSFET (Metal Oxide)	20V	16A (Ta), 69A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 4.5V	1410pF @ 10V	±20V	-	2.3W (Ta), 42W (Tc)	5.6 mOhm @ 16A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MU	DirectFET? Isometric MU
IRF6614TR1	Infineon Technologies	MOSFET N-CH 40V DIRECTFET-ST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock5,744	MOSFET (Metal Oxide)	40V	12.7A (Ta), 55A (Tc)	4.5V, 10V	2.25V @ 250µA	29nC @ 4.5V	2560pF @ 20V	±20V	-	2.1W (Ta), 42W (Tc)	8.3 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRF6614	Infineon Technologies	MOSFET N-CH 40V DIRECTFET-ST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock7,744	MOSFET (Metal Oxide)	40V	12.7A (Ta), 55A (Tc)	4.5V, 10V	2.25V @ 250µA	29nC @ 4.5V	2560pF @ 20V	±20V	-	2.1W (Ta), 42W (Tc)	8.3 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
IRF6613TR1	Infineon Technologies	MOSFET N-CH 40V DIRECTFET-MT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	Package: DirectFET? Isometric MT	Stock2,000	MOSFET (Metal Oxide)	40V	23A (Ta), 150A (Tc)	4.5V, 10V	2.25V @ 250µA	63nC @ 4.5V	5950pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	3.4 mOhm @ 23A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT	DirectFET? Isometric MT
IRF1405ZL-7PPBF	Infineon Technologies	MOSFET N-CH 55V 150A TO263CA-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-263CA-7 Package / Case: TO-263-7 (Straight Leads)	Package: TO-263-7 (Straight Leads)	Stock2,704	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 150µA	230nC @ 10V	5360pF @ 25V	±20V	-	230W (Tc)	4.9 mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-263CA-7	TO-263-7 (Straight Leads)
IRFH5303TRPBF	Infineon Technologies	MOSFET N-CH 30V 82A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 49A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,384	MOSFET (Metal Oxide)	30V	23A (Ta), 82A (Tc)	4.5V, 10V	2.35V @ 50µA	41nC @ 10V	2190pF @ 15V	±20V	-	3.6W (Ta), 46W (Tc)	4.2 mOhm @ 49A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
IRFH5207TRPBF	Infineon Technologies	MOSFET N-CH 75V 13A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock367,128	MOSFET (Metal Oxide)	75V	13A (Ta), 71A (Tc)	10V	4V @ 100µA	59nC @ 10V	2474pF @ 25V	±20V	-	3.6W (Ta), 105W (Tc)	9.6 mOhm @ 43A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
IRFH5106TRPBF	Infineon Technologies	MOSFET N-CH 60V 21A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 114W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock61,512	MOSFET (Metal Oxide)	60V	21A (Ta), 100A (Tc)	10V	4V @ 250µA	75nC @ 10V	3090pF @ 25V	±20V	-	3.6W (Ta), 114W (Tc)	5.6 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerVDFN
IRF9393PBF	Infineon Technologies	MOSFET P-CH 30V 9.2A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9.2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,888	MOSFET (Metal Oxide)	30V	9.2A (Ta)	10V, 20V	2.4V @ 25µA	38nC @ 10V	1110pF @ 25V	±25V	-	2.5W (Ta)	13.3 mOhm @ 9.2A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9388PBF	Infineon Technologies	MOSFET P-CH 30V 12A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,264	MOSFET (Metal Oxide)	30V	12A (Ta)	10V, 20V	2.4V @ 25µA	52nC @ 10V	1680pF @ 25V	±25V	-	2.5W (Ta)	8.5 mOhm @ 12A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9335PBF	Infineon Technologies	MOSFET P-CH 30V 5.4A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,408	MOSFET (Metal Oxide)	30V	5.4A (Ta)	4.5V, 10V	2.4V @ 10µA	14nC @ 10V	386pF @ 25V	±20V	-	2.5W (Ta)	59 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9333PBF	Infineon Technologies	MOSFET P-CH 30V 9.2A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 19.4 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,672	MOSFET (Metal Oxide)	30V	9.2A (Ta)	4.5V, 10V	2.4V @ 25µA	38nC @ 10V	1110pF @ 25V	±20V	-	2.5W (Ta)	19.4 mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9328PBF	Infineon Technologies	MOSFET P-CH 30V 12A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,656	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.4V @ 25µA	52nC @ 10V	1680pF @ 25V	±20V	-	2.5W (Ta)	11.9 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9321PBF	Infineon Technologies	MOSFET P-CH 30V 15A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,152	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.4V @ 50µA	98nC @ 10V	2590pF @ 25V	±20V	-	2.5W (Ta)	7.2 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9317PBF	Infineon Technologies	MOSFET P-CH 30V 16A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,552	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	2.4V @ 50µA	92nC @ 10V	2820pF @ 15V	±20V	-	2.5W (Ta)	6.6 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF6794MTRPBF	Infineon Technologies	MOSFET N-CH 25V DIRECTFET MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock2,224	MOSFET (Metal Oxide)	25V	32A (Ta), 200A (Tc)	4.5V, 10V	2.35V @ 100µA	47nC @ 4.5V	4420pF @ 13V	±20V	Schottky Diode (Body)	2.8W (Ta), 100W (Tc)	1.7 mOhm @ 32A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF6706S2TRPBF	Infineon Technologies	MOSFET N-CH 25V DIRECTFET S1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET? Isometric S1	Package: DirectFET? Isometric S1	Stock7,536	MOSFET (Metal Oxide)	25V	17A (Ta), 63A (Tc)	4.5V, 10V	2.35V @ 25µA	20nC @ 4.5V	1810pF @ 13V	±20V	-	1.8W (Ta), 26W (Tc)	3.8 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET S1	DirectFET? Isometric S1
IRF6201PBF	Infineon Technologies	MOSFET N-CH 20V 27A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8555pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 2.45 mOhm @ 27A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,072	MOSFET (Metal Oxide)	20V	27A (Ta)	2.5V, 4.5V	1.1V @ 100µA	195nC @ 4.5V	8555pF @ 16V	±12V	-	2.5W (Ta)	2.45 mOhm @ 27A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLR024ZTRPBF	Infineon Technologies	MOSFET N-CH 55V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock42,120	MOSFET (Metal Oxide)	55V	16A (Tc)	4.5V, 10V	3V @ 250µA	9.9nC @ 5V	380pF @ 25V	±16V	-	35W (Tc)	58 mOhm @ 9.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS4228TRLPBF	Infineon Technologies	MOSFET N-CH 150V 83A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock51,600	MOSFET (Metal Oxide)	150V	83A (Tc)	10V	5V @ 250µA	107nC @ 10V	4530pF @ 25V	±30V	-	330W (Tc)	15 mOhm @ 33A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF8113GTRPBF	Infineon Technologies	MOSFET N-CH 30V 17.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock660,228	MOSFET (Metal Oxide)	30V	17.2A (Ta)	4.5V, 10V	2.2V @ 250µA	36nC @ 4.5V	2910pF @ 15V	±20V	-	2.5W (Ta)	5.6 mOhm @ 17.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7821GTRPBF	Infineon Technologies	MOSFET N-CH 30V 13.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock89,664	MOSFET (Metal Oxide)	30V	13.6A (Ta)	4.5V, 10V	1V @ 250µA	14nC @ 4.5V	1010pF @ 15V	±20V	-	2.5W (Ta)	9.1 mOhm @ 13A, 10V	-55°C ~ 155°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)