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Infineon Technologies |
MOSFET N-CH 80V 18A/90A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 97µA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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Package: - |
Stock17,175 |
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MOSFET (Metal Oxide) | 80 V | 18A (Ta), 90A (Tc) | 10V | 3.5V @ 97µA | 73 nC @ 10 V | 5700 pF @ 40 V | ±20V | - | 2.2W (Ta), 78W (Tc) | 4.4mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
650V FET COOLMOS TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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Package: - |
Stock630 |
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MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | 7149 pF @ 400 V | ±20V | - | 305W (Tc) | 29mOhm @ 35.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 80V 200A HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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Package: - |
Stock1,536 |
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MOSFET (Metal Oxide) | 80 V | 200A (Tc) | 6V, 10V | 3.8V @ 130µA | 110 nC @ 10 V | 7670 pF @ 40 V | ±20V | - | 200W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 600V 16A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-344
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock43,782 |
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MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 4.5V @ 240µA | 23 nC @ 10 V | 1015 pF @ 400 V | ±20V | - | 64W (Tc) | 210mOhm @ 4.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-344 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock1,482 |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 243µA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 21A (Ta), 190A (Tc) | 8V, 10V | 4.6V @ 243µA | 93 nC @ 10 V | 7300 pF @ 75 V | ±20V | - | 3.8W (Ta), 319W (Tc) | 3.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | 512 pF @ 100 V | ±20V | - | 29W (Tc) | 520mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET_)40V 60V)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-53
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,628 |
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MOSFET (Metal Oxide) | 60 V | 310A (Tj) | 4.5V, 10V | 2.2V @ 130µA | 160 nC @ 10 V | 11400 pF @ 30 V | ±20V | - | 188W (Tc) | 1.1mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-53 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 730µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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Package: - |
Stock804 |
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MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 700µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Stock1,998 |
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MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | 2660 pF @ 100 V | ±20V | - | 278W (Tc) | 99mOhm @ 18.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,398 |
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MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 3.5V @ 320µA | 39 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 31W (Tc) | 380mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 77.5A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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Package: - |
Stock39 |
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MOSFET (Metal Oxide) | 600 V | 77.5A (Tc) | 10V | 3.5V @ 2.96mA | 290 nC @ 10 V | 6530 pF @ 10 V | ±20V | - | 481W (Tc) | 41mOhm @ 44.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
SIC_DISCRETE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock1,488 |
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MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 32W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 300A HDSOP-16-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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Package: - |
Stock6,846 |
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MOSFET (Metal Oxide) | 80 V | 300A (Tj) | 6V, 10V | 3.8V @ 230µA | 187 nC @ 10 V | 13178 pF @ 40 V | ±20V | - | 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-WSON-8-2
- Package / Case: 8-PowerWDFN
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Package: - |
Stock123 |
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MOSFET (Metal Oxide) | 100 V | 171A (Tc) | 6V, 10V | 3.8V @ 115µA | 88 nC @ 10 V | 6500 pF @ 50 V | ±20V | - | 188W (Tc) | 3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WSON-8-2 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock35,664 |
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MOSFET (Metal Oxide) | 200 V | 15.2A (Tc) | 10V | 4V @ 30µA | 11.6 nC @ 10 V | 920 pF @ 100 V | ±20V | - | 62.5W (Tc) | 90mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 25A/110A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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Package: - |
Stock29,688 |
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MOSFET (Metal Oxide) | 25 V | 25A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 23 nC @ 10 V | 1700 pF @ 12 V | ±20V | - | 2.5W (Ta), 48W (Tc) | 2.4mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 75V 17A 5X6 PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 75 V | 17A (Ta), 100A (Tc) | - | 4V @ 150µA | 98 nC @ 10 V | 4290 pF @ 25 V | - | - | - | 5.9mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 3.5V @ 140µA | 15 nC @ 10 V | 478 pF @ 400 V | ±20V | - | 52W (Tc) | 1.2Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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Package: - |
Stock5,520 |
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SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 600V 13A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-2
- Package / Case: 8-PowerSFN
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 12V | 4.5V @ 790µA | 83 nC @ 12 V | 3127 pF @ 300 V | ±20V | - | 245W (Tc) | 40mOhm @ 13A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
TRENCH >=100V PG-HSOF-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 181µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 143A (Tc) | 8V, 10V | 4.6V @ 181µA | 69 nC @ 10 V | 5300 pF @ 75 V | ±20V | - | 250W (Tc) | 5.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
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Infineon Technologies |
TRENCH 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.8V @ 280µA | 223 nC @ 10 V | 16900 pF @ 40 V | ±20V | - | 375W (Tc) | 2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Stock10,407 |
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MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 4V @ 270µA | 87 nC @ 10 V | 7100 pF @ 100 V | ±20V | - | 300W (Tc) | 11mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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