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Infineon Technologies |
MOSFET N-CH 30V 8.7A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
|
Package: 6-PowerVDFN |
Stock74,274 |
|
MOSFET (Metal Oxide) | 30V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | ±12V | - | 2.1W (Ta) | 15.5 mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 20V 5.6A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock4,360,272 |
|
MOSFET (Metal Oxide) | 20V | 5.6A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 16nC @ 5V | 1079pF @ 10V | ±12V | - | 2W (Ta) | 50 mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 3.2A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock5,085,492 |
|
MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | ±20V | - | 1.7W (Ta) | 100 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 25V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 8.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock36,000 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 2.5V, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1010pF @ 25V | ±12V | - | 2W (Ta) | 17.5 mOhm @ 8.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock23,184 |
|
MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | ±20V | - | 1W (Ta) | 12 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET P-CH 30V 2.4A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock1,238,496 |
|
MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | ±20V | - | 1.7W (Ta) | 180 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 500V 1.7A PG-TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock26,328 |
|
MOSFET (Metal Oxide) | 500V | 1.7A (Tc) | 13V | 3.5V @ 30µA | 4.3nC @ 10V | 84pF @ 100V | ±20V | - | 18W (Tc) | 3 Ohm @ 400mA, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 3.2A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock1,606,284 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 7nC @ 4.5V | 300pF @ 15V | ±12V | - | 1.7W (Ta) | 100 mOhm @ 2.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 86 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock994,272 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 11.4nC @ 4.5V | 594pF @ 15V | ±20V | - | 2W (Ta) | 86 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock922,908 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | ±20V | - | 1.25W (Ta) | 98 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 3.7A SC-59
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1447pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock254,736 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 2.5V | 750mV @ 30µA | 4.7nC @ 2.5V | 1447pF @ 10V | ±8V | - | 500mW (Ta) | 23 mOhm @ 3.7A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 3.8A SC-59
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 3.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,248 |
|
MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 2.5V, 4.5V | 1.2V @ 30µA | 8.8nC @ 4.5V | 1147pF @ 10V | ±12V | - | 500mW (Ta) | 21 mOhm @ 3.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 8.8A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (2x2)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock703,284 |
|
MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 19A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | ±20V | - | 2.1W (Ta) | 16 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (2x2) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 30V 5.8A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock72,000 |
|
MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 2.4V @ 25µA | 12nC @ 10V | 595pF @ 25V | ±20V | - | 2W (Ta) | 40 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 250V 140MA SC-59-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 1V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Tc)
- Rds On (Max) @ Id, Vgs: 11 Ohm @ 140mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock99,792 |
|
MOSFET (Metal Oxide) | 250V | 140mA (Ta) | 2.8V, 10V | 1V @ 130µA | 4.8nC @ 10V | 109pF @ 25V | ±20V | - | 500mW (Tc) | 11 Ohm @ 140mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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|
Infineon Technologies |
MOSFET P-CH 20V 6.9A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
|
Package: SOT-23-6 |
Stock454,224 |
|
MOSFET (Metal Oxide) | 20V | 6.9A (Ta) | 2.5V, 4.5V | 1.1V @ 10µA | 12nC @ 4.5V | 905pF @ 10V | ±12V | - | 2W (Ta) | 32 mOhm @ 6.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock81,972 |
|
MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 1.6V @ 8µA | 2.1nC @ 5V | 28pF @ 25V | ±20V | Depletion Mode | 500mW (Ta) | 500 Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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|
Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock436,980 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 633pF @ 10V | ±12V | - | 1.3W (Ta) | 65 mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A SOT-23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock939,084 |
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MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | ±12V | - | 1.25W (Ta) | 45 mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 0.76A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock693,024 |
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MOSFET (Metal Oxide) | 30V | 760mA (Ta) | 4.5V, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | ±20V | - | 540mW (Ta) | 600 mOhm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 0.78A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock234,204 |
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MOSFET (Metal Oxide) | 20V | 780mA (Ta) | 2.7V, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.5V | 97pF @ 15V | ±12V | - | 540mW (Ta) | 600 mOhm @ 610mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock910,800 |
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MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | ±12V | - | 540mW (Ta) | 250 mOhm @ 930mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 1.2A SOT-23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 910mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock504,420 |
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MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | ±20V | - | 540mW (Ta) | 250 mOhm @ 910mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A SOT-23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 388pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,637,308 |
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MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | 388pF @ 25V | ±20V | - | 1.3W (Ta) | 64 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock29,886 |
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MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 2.4V @ 26µA | 1.4nC @ 5V | 39pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 3.5 Ohm @ 160mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 5.3A SOT-23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 382pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,169,552 |
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MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 2.3V @ 25µA | 2.6nC @ 4.5V | 382pF @ 15V | ±20V | - | 1.3W (Ta) | 27 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 4.1A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 5µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 16V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3?/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,549,424 |
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MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 2.5V, 4.5V | 1.1V @ 5µA | 3.5nC @ 4.5V | 290pF @ 16V | ±12V | - | 1.3W (Ta) | 46 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 25V 5.8A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,650,780 |
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MOSFET (Metal Oxide) | 25V | 5.8A (Ta) | 4.5V, 10V | 2.35V @ 10µA | 5.4nC @ 10V | 430pF @ 10V | ±20V | - | 1.25W (Ta) | 24 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |