Page 88 - Infineon Technologies Products - Transistors - FETs, MOSFETs - Single

IRF8721TRPBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,228
BSC0904NSI
Infineon Technologies

MOSFET N-CH 30V 20A 8TDSON

Package: 8-PowerTDFN

Stock7,968
BSP170PH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

Package: TO-261-4, TO-261AA

Stock37,986
IRF7807ZTRPBF
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock288,660
BSP171PH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

Package: TO-261-4, TO-261AA

Stock56,952
IRF9393TRPBF
Infineon Technologies

MOSFET P-CH 30V 9.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock717,312
BSZ065N03LS
Infineon Technologies

MOSFET N-CH 30V 12A TSDSON-8

Package: 8-PowerTDFN

Stock170,640
IRLR8256TRPBF
Infineon Technologies

MOSFET N-CH 25V 81A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock8,652
BSP316PH6327XTSA1
Infineon Technologies

MOSFET P-CH 100V 0.68A SOT223

Package: TO-261-4, TO-261AA

Stock42,840
BSP315PH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 1.17A SOT-223

Package: TO-261-4, TO-261AA

Stock24,774
IPD135N03L G
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock620,868
BSZ165N04NS G
Infineon Technologies

MOSFET N-CH 40V 31A TSDSON-8

Package: 8-PowerTDFN

Stock253,188
IRF8714TRPBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,888,180
BSC080N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 53A TDSON-8

Package: 8-PowerTDFN

Stock41,640
BSS126H6906XTSA1
Infineon Technologies

MOSFET N-CH 600V 0.021A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock42,042
IPN70R1K5CEATMA1
Infineon Technologies

MOSFET NCH 700V 5.4A SOT223

Package: SOT-223-3

Stock27,516
IRLMS2002TRPBF
Infineon Technologies

MOSFET N-CH 20V 6.5A 6-TSOP

Package: SOT-23-6

Stock1,302,768
IRFL014NTRPBF
Infineon Technologies

MOSFET N-CH 55V 1.9A SOT223

Package: TO-261-4, TO-261AA

Stock1,386,072
IPD090N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 40A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock45,288
IRLR8729TRPBF
Infineon Technologies

MOSFET N-CH 30V 58A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock697,536

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF8721TRPBF	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,228	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1040pF @ 15V	±20V	-	2.5W (Ta)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSC0904NSI	Infineon Technologies	MOSFET N-CH 30V 20A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,968	MOSFET (Metal Oxide)	30V	20A (Ta), 78A (Tc)	4.5V, 10V	2V @ 250µA	17nC @ 10V	1100pF @ 15V	±20V	-	2.5W (Ta), 37W (Tc)	3.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BSP170PH6327XTSA1	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock37,986	MOSFET (Metal Oxide)	60V	1.9A (Ta)	10V	4V @ 250µA	14nC @ 10V	410pF @ 25V	±20V	-	1.8W (Ta)	300 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRF7807ZTRPBF	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock288,660	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.25V @ 250µA	11nC @ 4.5V	770pF @ 15V	±20V	-	2.5W (Ta)	13.8 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSP171PH6327XTSA1	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock56,952	MOSFET (Metal Oxide)	60V	1.9A (Ta)	4.5V, 10V	2V @ 460µA	20nC @ 10V	460pF @ 25V	±20V	-	1.8W (Ta)	300 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRF9393TRPBF	Infineon Technologies	MOSFET P-CH 30V 9.2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9.2A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock717,312	MOSFET (Metal Oxide)	30V	9.2A (Ta)	10V, 20V	2.4V @ 25µA	38nC @ 10V	1110pF @ 25V	±25V	-	2.5W (Ta)	13.3 mOhm @ 9.2A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSZ065N03LS	Infineon Technologies	MOSFET N-CH 30V 12A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock170,640	MOSFET (Metal Oxide)	30V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	10nC @ 10V	670pF @ 15V	±20V	-	2.1W (Ta), 26W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IRLR8256TRPBF	Infineon Technologies	MOSFET N-CH 25V 81A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock8,652	MOSFET (Metal Oxide)	25V	81A (Tc)	4.5V, 10V	2.35V @ 25µA	15nC @ 4.5V	1470pF @ 13V	±20V	-	63W (Tc)	5.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSP316PH6327XTSA1	Infineon Technologies	MOSFET P-CH 100V 0.68A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock42,840	MOSFET (Metal Oxide)	100V	680mA (Ta)	4.5V, 10V	2V @ 170µA	6.4nC @ 10V	146pF @ 25V	±20V	-	1.8W (Ta)	1.8 Ohm @ 680mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
BSP315PH6327XTSA1	Infineon Technologies	MOSFET P-CH 60V 1.17A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock24,774	MOSFET (Metal Oxide)	60V	1.17A (Ta)	4.5V, 10V	2V @ 160µA	7.8nC @ 10V	160pF @ 25V	±20V	-	1.8W (Ta)	800 mOhm @ 1.17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IPD135N03L G	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock620,868	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2.2V @ 250µA	10nC @ 10V	1000pF @ 15V	±20V	-	31W (Tc)	13.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ165N04NS G	Infineon Technologies	MOSFET N-CH 40V 31A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock253,188	MOSFET (Metal Oxide)	40V	8.9A (Ta), 31A (Tc)	10V	4V @ 10µA	10nC @ 10V	840pF @ 20V	±20V	-	2.1W (Ta), 25W (Tc)	16.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IRF8714TRPBF	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,888,180	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1020pF @ 15V	±20V	-	2.5W (Ta)	8.7 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSC080N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 53A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock41,640	MOSFET (Metal Oxide)	30V	14A (Ta), 53A (Tc)	4.5V, 10V	2.2V @ 250µA	21nC @ 10V	1700pF @ 15V	±20V	-	2.5W (Ta), 35W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BSS126H6906XTSA1	Infineon Technologies	MOSFET N-CH 600V 0.021A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock42,042	MOSFET (Metal Oxide)	600V	21mA (Ta)	0V, 10V	1.6V @ 8µA	2.1nC @ 5V	28pF @ 25V	±20V	Depletion Mode	500mW (Ta)	500 Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IPN70R1K5CEATMA1	Infineon Technologies	MOSFET NCH 700V 5.4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	Package: SOT-223-3	Stock27,516	MOSFET (Metal Oxide)	700V	5.4A (Tc)	10V	3.5V @ 100µA	10.5nC @ 10V	225pF @ 100V	±20V	Super Junction	5W (Tc)	1.5 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	SOT-223-3
IRLMS2002TRPBF	Infineon Technologies	MOSFET N-CH 20V 6.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(SOT23-6) Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,302,768	MOSFET (Metal Oxide)	20V	6.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	22nC @ 5V	1310pF @ 15V	±12V	-	2W (Ta)	30 mOhm @ 6.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(SOT23-6)	SOT-23-6
IRFL014NTRPBF	Infineon Technologies	MOSFET N-CH 55V 1.9A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,386,072	MOSFET (Metal Oxide)	55V	1.9A (Ta)	10V	4V @ 250µA	11nC @ 10V	190pF @ 25V	±20V	-	1W (Ta)	160 mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPD090N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 40A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock45,288	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.2V @ 250µA	15nC @ 10V	1600pF @ 15V	±20V	-	42W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR8729TRPBF	Infineon Technologies	MOSFET N-CH 30V 58A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock697,536	MOSFET (Metal Oxide)	30V	58A (Tc)	4.5V, 10V	2.35V @ 25µA	16nC @ 4.5V	1350pF @ 15V	±20V	-	55W (Tc)	8.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC100N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 44A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock147,726	MOSFET (Metal Oxide)	30V	12A (Ta), 44A (Tc)	4.5V, 10V	2V @ 250µA	23nC @ 10V	1700pF @ 15V	±20V	-	2.5W (Ta), 30W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BSP88H6327XTSA1	Infineon Technologies	MOSFET N-CH 4SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 1.4V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock53,856	MOSFET (Metal Oxide)	240V	350mA (Ta)	2.8V, 10V	1.4V @ 108µA	6.8nC @ 10V	95pF @ 25V	±20V	-	1.8W (Ta)	6 Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRLR8726TRPBF	Infineon Technologies	MOSFET N-CH 30V 86A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock29,388	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.35V @ 50µA	23nC @ 4.5V	2150pF @ 15V	±20V	-	75W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ105N04NS G	Infineon Technologies	MOSFET N-CH 40V 40A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock274,830	MOSFET (Metal Oxide)	40V	11A (Ta), 40A (Tc)	10V	4V @ 14µA	17nC @ 10V	1300pF @ 20V	±20V	-	2.1W (Ta), 35W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
BSS225H6327FTSA1	Infineon Technologies	MOSFET N-CH 600V 0.09A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	Package: TO-243AA	Stock20,718	MOSFET (Metal Oxide)	600V	90mA (Ta)	4.5V, 10V	2.3V @ 94µA	5.8nC @ 10V	131pF @ 25V	±20V	-	1W (Ta)	45 Ohm @ 90mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
BSS606NH6327XTSA1	Infineon Technologies	MOSFET N-CH 60V 3.2A SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	Package: TO-243AA	Stock28,890	MOSFET (Metal Oxide)	60V	3.2A (Ta)	4.5V, 10V	2.3V @ 15µA	5.6nC @ 5V	657pF @ 25V	±20V	-	1W (Ta)	60 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
IRF5803TRPBF	Infineon Technologies	MOSFET P-CH 40V 3.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,197,684	MOSFET (Metal Oxide)	40V	3.4A (Ta)	4.5V, 10V	3V @ 250µA	37nC @ 10V	1110pF @ 25V	±20V	-	2W (Ta)	112 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6 Thin, TSOT-23-6
IRLHS6242TRPBF	Infineon Technologies	MOSFET N-CH 20V 10A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 8.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	Package: 6-PowerVDFN	Stock91,572	MOSFET (Metal Oxide)	20V	10A (Ta), 12A (Tc)	2.5V, 4.5V	1.1V @ 10µA	14nC @ 4.5V	1110pF @ 10V	±12V	-	1.98W (Ta), 9.6W (Tc)	11.7 mOhm @ 8.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-PQFN (2x2)	6-PowerVDFN