|
|
|
Infineon Technologies |
MOSFET N-CH 560V 52A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock780,204 |
|
MOSFET (Metal Oxide) | 560V | 52A (Tc) | 10V | 3.9V @ 2.7mA | 290nC @ 10V | 6800pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 77.5A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Rds On (Max) @ Id, Vgs: 41 mOhm @ 35.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock11,520 |
|
MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 4.5V @ 2.96mA | 170nC @ 10V | 8180pF @ 100V | ±20V | - | 481W (Tc) | 41 mOhm @ 35.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 700V 43.3A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.6A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock9,876 |
|
MOSFET (Metal Oxide) | 650V | 43.3A (Tc) | 10V | 4.5V @ 1.76mA | 161nC @ 10V | 4440pF @ 100V | ±20V | - | 391W (Tc) | 80 mOhm @ 17.6A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 170A SUPER247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 580W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: SUPER-247 (TO-274AA)
- Package / Case: TO-274AA
|
Package: TO-274AA |
Stock19,920 |
|
MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 5V @ 250µA | 390nC @ 10V | 6790pF @ 25V | ±30V | - | 580W (Tc) | 9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 34.6A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 34.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 313W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 21.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock557,664 |
|
MOSFET (Metal Oxide) | 650V | 34.6A (Tc) | 10V | 3.9V @ 1.9mA | 200nC @ 10V | 4500pF @ 25V | ±20V | - | 313W (Tc) | 100 mOhm @ 21.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 31A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock16,752 |
|
MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | ±20V | - | 255W (Tc) | 99 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 250V 93A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10880pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,584 |
|
MOSFET (Metal Oxide) | 250V | 93A (Tc) | 10V | 5V @ 250µA | 270nC @ 10V | 10880pF @ 50V | ±20V | - | 520W (Tc) | 17.5 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 250V 61A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7076pF @ 125V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 61A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock16,992 |
|
MOSFET (Metal Oxide) | 250V | 61A (Tc) | 10V | 4V @ 270µA | 86nC @ 10V | 7076pF @ 125V | ±20V | - | 300W (Tc) | 22 mOhm @ 61A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V 15A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,952 |
|
MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | ±20V | - | 208W (Tc) | 340 mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 300V 70A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10774pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 517W (Tc)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock6,192 |
|
MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 5V @ 250µA | 270nC @ 10V | 10774pF @ 50V | ±20V | - | 517W (Tc) | 32 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 53.5A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 20.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock8,436 |
|
MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 4.5V @ 1.72mA | 100nC @ 10V | 4750pF @ 100V | ±20V | - | 391W (Tc) | 70 mOhm @ 20.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 25A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock269,736 |
|
MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | ±20V | - | 208W (Tc) | 125 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 300V 38A TO-220PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5168pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Rds On (Max) @ Id, Vgs: 69 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,006 |
|
MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 5V @ 250µA | 125nC @ 10V | 5168pF @ 50V | ±20V | - | 341W (Tc) | 69 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock6,336 |
|
MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | ±16V | - | 370W (Tc) | 3.9 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,456 |
|
MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 9370pF @ 50V | ±20V | - | 370W (Tc) | 3 mOhm @ 140A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 180A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,944 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | ±16V | - | 370W (Tc) | 4.3 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V 15A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock9,012 |
|
MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | ±20V | - | 35W (Tc) | 340 mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 120V 120A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock390,000 |
|
MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | ±20V | - | 300W (Tc) | 4.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,296 |
|
MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 4.5V @ 1.21mA | 70nC @ 10V | 3330pF @ 100V | ±20V | - | 278W (Tc) | 99 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock261,012 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 8920pF @ 25V | ±20V | - | 380W (Tc) | 1.7 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 341W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock19,728 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | ±20V | - | 341W (Tc) | 1.7 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock12,522 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | ±20V | - | 375W (Tc) | 0.75 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 160A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock216,360 |
|
MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | ±20V | - | 300W (Tc) | 2.6 mOhm @ 140A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 30A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock9,936 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 3.5V @ 960µA | 96nC @ 10V | 2127pF @ 100V | ±20V | - | 34W (Tc) | 125 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A D2-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18,804 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | ±20V | - | 375W (Tc) | 1.7 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock19,062 |
|
MOSFET (Metal Oxide) | 75V | 240A (Tc) | 6V, 10V | 3.7V @ 250µA | 428nC @ 10V | 13970pF @ 25V | ±20V | - | 375W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 20.7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock10,032 |
|
MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N CH 60V 195A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock14,724 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | ±20V | - | 375W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
0
Login/Register
BOM
Cart
