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DIODE GEN PURP 600V 6A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: 5pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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600 V | 6A | 2.66 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 15 ns | 50 µA @ 600 V | 5pF @ 400V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 60A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 30pF @ 600V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock90 |
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1200 V | 60A | 3.25 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 200 µA @ 1200 V | 30pF @ 600V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 60A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
- Capacitance @ Vr, F: 30pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1200 V | 60A | 2.66 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 650 µA @ 1200 V | 30pF @ 600V, 1MHz | Surface Mount | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | TO-268AA (D3Pak-HV) | -55°C ~ 175°C |
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IXYS |
DIODE SIC 1.2KV 12.5A ISO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 755pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISO247
- Operating Temperature - Junction: -40°C ~ 150°C
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1200 V | 12.5A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 1200 V | 755pF @ 0V, 1MHz | Through Hole | TO-247-3 | ISO247 | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 2.2KV 2840A W117
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 2840A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W117
- Operating Temperature - Junction: -
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Package: - |
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2200 V | 2840A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Clamp On | DO-200AB, B-PUK | W117 | - |
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IXYS |
DIODE GEN PURP 6.5KV 1975A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6500 V
- Current - Average Rectified (Io): 1975A
- Voltage - Forward (Vf) (Max) @ If: 3.95 V @ 4200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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6500 V | 1975A | 3.95 V @ 4200 A | Standard Recovery >500ns, > 200mA (Io) | 45 µs | 100 mA @ 6500 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 6.8KV 1975A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6800 V
- Current - Average Rectified (Io): 1975A
- Voltage - Forward (Vf) (Max) @ If: 3.95 V @ 4200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 150°C
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6800 V | 1975A | 3.95 V @ 4200 A | Standard Recovery >500ns, > 200mA (Io) | 45 µs | 100 mA @ 6800 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 150°C |
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IXYS |
DIODE GP 600V 15A TO220ACFP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 250 µA @ 600 V
- Capacitance @ Vr, F: 26pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220ACFP
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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600 V | 15A | 2.52 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 250 µA @ 600 V | 26pF @ 400V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220ACFP | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 2.4KV 6262A W7
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2400 V
- Current - Average Rectified (Io): 6262A
- Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W7
- Operating Temperature - Junction: -40°C ~ 175°C
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2400 V | 6262A | 1.18 V @ 6800 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 2400 V | - | Chassis Mount | DO-200AE | W7 | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 11A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 6pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
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1200 V | 11A | 2.6 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 1200 V | 6pF @ 600V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 2KV 6262A W7
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000 V
- Current - Average Rectified (Io): 6262A
- Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: W7
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
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2000 V | 6262A | 1.18 V @ 6800 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 2000 V | - | Chassis Mount | DO-200AE | W7 | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 11A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 6pF @ 600V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock138 |
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1200 V | 11A | 2.6 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 1200 V | 6pF @ 600V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -40°C ~ 150°C |
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IXYS |
DIODE GEN PURP 1.8KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.27 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 260 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
- Capacitance @ Vr, F: 3pF @ 200V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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1800 V | 10A | 2.27 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 260 ns | 50 µA @ 1800 V | 3pF @ 200V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.8KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.27 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 260 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1800 V
- Capacitance @ Vr, F: 3pF @ 200V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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1800 V | 10A | 2.27 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 260 ns | 50 µA @ 1800 V | 3pF @ 200V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.5KV 944A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500 V
- Current - Average Rectified (Io): 944A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15 mA @ 1500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 190°C
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Package: - |
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1500 V | 944A | 1.45 V @ 1930 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 1500 V | - | Clamp On | DO-200AB, A-PUK | W1 | -40°C ~ 190°C |
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IXYS |
DIODE GEN PURP 1.2KV 944A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 944A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 190°C
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Package: - |
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1200 V | 944A | 1.45 V @ 1930 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 1200 V | - | Clamp On | DO-200AB, A-PUK | W1 | -40°C ~ 190°C |
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IXYS |
DIODE GEN PURP 1.6KV 30A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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1600 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 30A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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1600 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 80A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 43pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock102 |
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1600 V | 80A | 1.17 V @ 80 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 43pF @ 400V, 1MHz | Through Hole | TO-247-3 | TO-247 (IXTH) | -55°C ~ 150°C |
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PWR DIODE DISC-FRED TO-220AB / T
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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IXYS |
DIODE GEN PURP 1.2KV 30A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 12pF @ 600V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock45 |
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1200 V | 30A | 3.75 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | 12pF @ 600V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 50A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 19pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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1600 V | 50A | 1.3 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 19pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 2.5KV 1494A W5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2500 V
- Current - Average Rectified (Io): 1494A
- Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.9 µs
- Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W5
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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2500 V | 1494A | 2.34 V @ 4500 A | Standard Recovery >500ns, > 200mA (Io) | 3.9 µs | 85 mA @ 2500 V | - | Clamp On | DO-200AC, K-PUK | W5 | -40°C ~ 125°C |
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IXYS |
DIODE GEN PURP 600V 15A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 15A | 2.54 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 100 µA @ 600 V | 12pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 600V 15A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 15A | 2.54 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 100 µA @ 600 V | 12pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 45A TO268AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 19pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock90 |
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1600 V | 45A | 1.26 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 19pF @ 400V, 1MHz | Surface Mount | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | TO-268AA (D3Pak-HV) | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 4.8KV 2899A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4800 V
- Current - Average Rectified (Io): 2899A
- Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 48 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 160°C
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Package: - |
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4800 V | 2899A | 2.9 V @ 8600 A | Standard Recovery >500ns, > 200mA (Io) | 48 µs | 50 mA @ 4800 V | - | Clamp On | DO-200AC, K-PUK | W54 | -40°C ~ 160°C |
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IXYS |
DIODE GEN PURP 2KV 955A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000 V
- Current - Average Rectified (Io): 955A
- Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.4 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
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2000 V | 955A | 2.07 V @ 1900 A | Standard Recovery >500ns, > 200mA (Io) | 3.4 µs | 50 mA @ 2000 V | - | Clamp On | DO-200AB, B-PUK | W4 | -40°C ~ 125°C |