IXYS Products - Diodes - Rectifiers - Single

DIODE GEN PURP 80V 437A W1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 437A
• Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 80 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, A-PUK
• Supplier Device Package: W1
• Operating Temperature - Junction: -40°C ~ 125°C

DIODE SCHOTTKY 1.2KV 18A ISO247

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
• Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISO247
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 14A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 14A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 14A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 14A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 4.6KV 1856A W5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4600 V
• Current - Average Rectified (Io): 1856A
• Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 36 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W5
• Operating Temperature - Junction: -40°C ~ 160°C

DIODE GEN PURP 4.8KV 1856A W5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4800 V
• Current - Average Rectified (Io): 1856A
• Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 36 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W5
• Operating Temperature - Junction: -40°C ~ 160°C

DIODE GEN PURP 2KV 914A W4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000 V
• Current - Average Rectified (Io): 914A
• Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 3770 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3.2 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W4
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 1.8KV 358A W1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 358A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.4 µs
• Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, A-PUK
• Supplier Device Package: W1
• Operating Temperature - Junction: -40°C ~ 125°C

DIODE GEN PURP 1.2KV 358A W1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 358A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.4 µs
• Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, A-PUK
• Supplier Device Package: W1
• Operating Temperature - Junction: -40°C ~ 125°C

DIODE GEN PURP 2KV 2505A W54

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000 V
• Current - Average Rectified (Io): 2505A
• Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7.6 µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W54
• Operating Temperature - Junction: -

DIODE GEN PURP 2.5KV 2505A W54

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500 V
• Current - Average Rectified (Io): 2505A
• Voltage - Forward (Vf) (Max) @ If: 991 mV @ 2000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7.6 µs
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W54
• Operating Temperature - Junction: -

DIODE GEN PURP 6.8KV 4825A W121

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6800 V
• Current - Average Rectified (Io): 4825A
• Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 53 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD
• Supplier Device Package: W121
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 7200V 4825A W121

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 7200 V
• Current - Average Rectified (Io): 4825A
• Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 53 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD
• Supplier Device Package: W121
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 30A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: 16pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE GEN PURP 600V 30A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -55°C ~ 150°C

DIODE SCHOTTKY 45V 6A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 45V 6A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 45 V
• Capacitance @ Vr, F: 497pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE GP 400V 30A ISOPLUS220

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 46pF @ 200V, 1MHz
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Supplier Device Package: ISOPLUS220™
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE GEN PURP 3.6KV 1780A -

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3600 V
• Current - Average Rectified (Io): 1780A
• Voltage - Forward (Vf) (Max) @ If: 3.83 V @ 1780 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.22 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 140°C

DIODE GEN PURP 2.8KV 1730A W113

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800 V
• Current - Average Rectified (Io): 1730A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 2800 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W113
• Operating Temperature - Junction: -40°C ~ 160°C

DIODE GEN PURP 2.4KV 1730A W113

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400 V
• Current - Average Rectified (Io): 1730A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 2400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: W113
• Operating Temperature - Junction: -40°C ~ 160°C

DIODE GEN PURP 600V 25A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 600 V
• Capacitance @ Vr, F: 20pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 600V 25A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 600 V
• Capacitance @ Vr, F: 20pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 800V 20A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 4pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE GEN PURP 1.2KV 30A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
• Capacitance @ Vr, F: 10pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -40°C ~ 175°C

DIODE GEN PURP 600V 20A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -40°C ~ 150°C

DIODE GEN PURP 2.4KV 3842A W54

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400 V
• Current - Average Rectified (Io): 3842A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 34 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W54
• Operating Temperature - Junction: -40°C ~ 160°C

DIODE GEN PURP 2.8KV 3842A W54

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2800 V
• Current - Average Rectified (Io): 3842A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 34 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W54
• Operating Temperature - Junction: -40°C ~ 160°C