Page 19 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTF1N250
IXYS

MOSFET N-CH 2500V 1A ISOPLUS I4

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IXFN55N120SK
IXYS

SIC AND MULTICHIP DISCRETE

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Stock564
IXFJ26N50
IXYS

MOSFET N-CH 500V 14A TO247

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IXTH130N15X4
IXYS

MOSFET N-CH 150V 130A TO247

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IXTH94N20X4
IXYS

MOSFET N-CH 200V 94A X4 TO-247

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Stock1,020
IXFA36N60X3
IXYS

MOSFET ULTRA JCT 600V 36A TO263

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Stock90
IXTK210P10T
IXYS

MOSFET P-CH -100V -210A TO-264

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IXTT96N20P-TRL
IXYS

MOSFET N-CH 200V 96A TO268

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IXTT11P50-TRL
IXYS

MOSFET P-CH 500V 11A TO268

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IXFX48N55
IXYS

MOSFET N-CH 48A PLUS247-3

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MMIX1T660N04T4
IXYS

MOSFET N-CH 40V 660A 24SMPD

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IXFA30N25X3
IXYS

MOSFET N-CHANNEL 250V 30A TO263

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Stock513
IXTA230N04T4
IXYS

MOSFET N-CH 40V 230A TO263AA

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IXFT16N120P-TRL
IXYS

MOSFET N-CH 1200V 16A TO268

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IXFM1633
IXYS

POWER MOSFET TO-3

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IXTA30N65X2
IXYS

IXTA30N65X2

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IXTH44N25L2
IXYS

MOSFET N-CH 250V 44A TO247

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IXTQ69N30PM
IXYS

MOSFET N-CH 300V 25A TO3PFP

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IXFM1766
IXYS

POWER MOSFET TO-3

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IXTA130N15X4
IXYS

MOSFET N-CH 150V 130A TO263AA

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Stock1,722

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTF1N250	IXYS	MOSFET N-CH 2500V 1A ISOPLUS I4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: i4-Pac™-5 (3 Leads)	Package: -	Request a Quote	MOSFET (Metal Oxide)	2500 V	1A (Tc)	10V	4V @ 250µA	41 nC @ 10 V	1660 pF @ 25 V	±20V	-	110W	40Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	i4-Pac™-5 (3 Leads)
IXFN55N120SK	IXYS	SIC AND MULTICHIP DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Stock564	SiC (Silicon Carbide Junction Transistor)	1200 V	54A (Tc)	15V	3.6V @ 12mA	107 nC @ 15 V	3360 pF @ 1000 V	+15V, -4V	-	-	42mOhm @ 40A, 15V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFJ26N50	IXYS	MOSFET N-CH 500V 14A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH130N15X4	IXYS	MOSFET N-CH 150V 130A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 250µA	87 nC @ 10 V	4770 pF @ 25 V	±20V	-	400W (Tc)	8.5mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXTH94N20X4	IXYS	MOSFET N-CH 200V 94A X4 TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,020	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	4.5V @ 250µA	77 nC @ 10 V	5050 pF @ 25 V	±20V	-	360W (Tc)	10.6mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISO TO-247-3	TO-247-3
IXFA36N60X3	IXYS	MOSFET ULTRA JCT 600V 36A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock90	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	5V @ 2.5mA	29 nC @ 10 V	2030 pF @ 25 V	±20V	-	446W (Tc)	90mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTK210P10T	IXYS	MOSFET P-CH -100V -210A TO-264 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTT96N20P-TRL	IXYS	MOSFET N-CH 200V 96A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 48A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	96A (Tc)	10V	5V @ 250µA	145 nC @ 10 V	4800 pF @ 25 V	±20V	-	600W (Tc)	24mOhm @ 48A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTT11P50-TRL	IXYS	MOSFET P-CH 500V 11A TO268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	5V @ 250µA	130 nC @ 10 V	4700 pF @ 25 V	±20V	-	300W (Tc)	750mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFX48N55	IXYS	MOSFET N-CH 48A PLUS247-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MMIX1T660N04T4	IXYS	MOSFET N-CH 40V 660A 24SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 660A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	660A (Tc)	10V	4V @ 250µA	860 nC @ 10 V	44000 pF @ 25 V	±15V	-	830W (Tc)	0.85mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
IXFA30N25X3	IXYS	MOSFET N-CHANNEL 250V 30A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock513	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1450 pF @ 25 V	±20V	-	176W (Tc)	60mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA230N04T4	IXYS	MOSFET N-CH 40V 230A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	230A (Tc)	10V	4V @ 250µA	140 nC @ 10 V	7400 pF @ 25 V	±15V	-	340W (Tc)	2.9mOhm @ 115A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFT16N120P-TRL	IXYS	MOSFET N-CH 1200V 16A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	6.5V @ 1mA	120 nC @ 10 V	6900 pF @ 25 V	±30V	-	660W (Tc)	950mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFM1633	IXYS	POWER MOSFET TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA30N65X2	IXYS	IXTA30N65X2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH44N25L2	IXYS	MOSFET N-CH 250V 44A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	4.5V @ 250µA	256 nC @ 10 V	5740 pF @ 25 V	±20V	-	400W (Tc)	75mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTQ69N30PM	IXYS	MOSFET N-CH 300V 25A TO3PFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 34.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFP Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	25A (Tc)	10V	5V @ 250µA	156 nC @ 10 V	4960 pF @ 25 V	±20V	-	90W (Tc)	49mOhm @ 34.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PFP	TO-3P-3 Full Pack
IXFM1766	IXYS	POWER MOSFET TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA130N15X4	IXYS	MOSFET N-CH 150V 130A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,722	MOSFET (Metal Oxide)	150 V	130A (Tc)	10V	4.5V @ 250µA	87 nC @ 10 V	4770 pF @ 25 V	±20V	-	400W (Tc)	8mOhm @ 65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ60N20T	IXYS	MOSFET N-CH 200V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	60A (Tc)	10V	5V @ 250µA	73 nC @ 10 V	4530 pF @ 25 V	±20V	-	500W (Ta)	40mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFN50N120SK	IXYS	SICFET N-CH 1200V 48A SOT227B FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	48A (Tc)	20V	2.8V @ 10mA	115 nC @ 20 V	1895 pF @ 1000 V	+20V, -5V	-	-	52mOhm @ 40A, 20V	-40°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTQ60N10T	IXYS	MOSFET N-CH 100V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	60A (Tc)	10V	4.5V @ 50µA	49 nC @ 10 V	2650 pF @ 25 V	±30V	-	176W (Tc)	18mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA6N100D2-TRL	IXYS	MOSFET N-CH 1000V 6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	6A (Tj)	0V	4.5V @ 250µA	95 nC @ 5 V	2650 pF @ 25 V	±20V	Depletion Mode	300W (Tc)	2.2Ohm @ 3A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTV230N85TS	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA60N10T-TRL	IXYS	MOSFET N-CH 100V 60A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock9,597	MOSFET (Metal Oxide)	100 V	60A (Tc)	10V	4.5V @ 50µA	49 nC @ 10 V	2650 pF @ 25 V	±20V	-	176W (Tc)	18mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH26N65X2	IXYS	IXFH26N65X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	Package: -	Stock864	MOSFET (Metal Oxide)	650 V	26A (Tc)	10V	5V @ 2.5mA	45 nC @ 10 V	2450 pF @ 25 V	±30V	-	460W (Tc)	130mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFH26N65X3	IXYS	DISCRETE MOSFET 26A 650V X3 TO24 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-