Page 20 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFH26N50Q
IXYS

MOSFET N-CH 500V 26A TO-247AD

Package: TO-247-3

Stock6,224
IXFH40N30
IXYS

MOSFET N-CH 300V 40A TO-247AD

Package: TO-247-3

Stock486,912
IXTH16P60P
IXYS

MOSFET P-CH 600V 16A TO-247

Package: TO-247-3

Stock6,780
IXTH48P20P
IXYS

MOSFET P-CH 200V 48A TO-247

Package: TO-247-3

Stock17,862
IXTH90P10P
IXYS

MOSFET P-CH 100V 90A TO-247

Package: TO-247-3

Stock14,856
IXFH60N50P3
IXYS

MOSFET N-CH 500V 60A TO247

Package: TO-247-3

Stock103,464
IXTA3N120
IXYS

MOSFET N-CH 1.2KV 3A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock10,560
IXTH200N10T
IXYS

MOSFET N-CH 100V 200A TO-247

Package: TO-247-3

Stock18,924
IXTQ52P10P
IXYS

MOSFET P-CH 100V 52A TO-3P

Package: TO-3P-3, SC-65-3

Stock20,274
IXTP26P20P
IXYS

MOSFET P-CH 200V 26A TO-220

Package: TO-220-3

Stock32,754
IXTA26P20P
IXYS

MOSFET P-CH 200V 26A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,856
IXTP10P50P
IXYS

MOSFET P-CH 500V 10A TO-220

Package: TO-220-3

Stock7,224
IXTA96P085T
IXYS

MOSFET P-CH 85V 96A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
IXTA76P10T
IXYS

MOSFET P-CH 100V 76A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,220
IXTP96P085T
IXYS

MOSFET P-CH 85V 96A TO-220

Package: TO-220-3

Stock20,544
IXTA3N120TRL
IXYS

MOSFET N-CH 1200V 3A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock21,972
IXTA10P50PTRL
IXYS

MOSFET P-CH 500V 10A TO-263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,338
IXTA44P15TTRL
IXYS

MOSFET P-CH 150V 44A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,632
IXTX1925
IXYS

MOSFET N-CH PLUS247-3

Package: -

Request a Quote
IXFA12N65X2
IXYS

MOSFET N-CH 650V 12A TO263AA

Package: -

Stock864

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFH26N50Q	IXYS	MOSFET N-CH 500V 26A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,224	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4.5V @ 4mA	95nC @ 10V	3900pF @ 25V	±20V	-	300W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH40N30	IXYS	MOSFET N-CH 300V 40A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock486,912	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	85 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH16P60P	IXYS	MOSFET P-CH 600V 16A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,780	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4.5V @ 250µA	92nC @ 10V	5120pF @ 25V	±20V	-	460W (Tc)	720 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH48P20P	IXYS	MOSFET P-CH 200V 48A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock17,862	MOSFET (Metal Oxide)	200V	48A (Tc)	10V	4.5V @ 250µA	103nC @ 10V	5400pF @ 25V	±20V	-	462W (Tc)	85 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH90P10P	IXYS	MOSFET P-CH 100V 90A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock14,856	MOSFET (Metal Oxide)	100V	90A (Tc)	10V	4V @ 250µA	120nC @ 10V	5800pF @ 25V	±20V	-	462W (Tc)	25 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH60N50P3	IXYS	MOSFET N-CH 500V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	500V	60A (Tc)	10V	5V @ 4mA	96nC @ 10V	6250pF @ 25V	±30V	-	1040W (Tc)	100 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTA3N120	IXYS	MOSFET N-CH 1.2KV 3A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock10,560	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	5V @ 250µA	42nC @ 10V	1350pF @ 25V	±20V	-	200W (Tc)	4.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH200N10T	IXYS	MOSFET N-CH 100V 200A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock18,924	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9400pF @ 25V	±30V	-	550W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTQ52P10P	IXYS	MOSFET P-CH 100V 52A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2845pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock20,274	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	4.5V @ 250µA	60nC @ 10V	2845pF @ 25V	±20V	-	300W (Tc)	50 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTP26P20P	IXYS	MOSFET P-CH 200V 26A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock32,754	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	4V @ 250µA	56nC @ 10V	2740pF @ 25V	±20V	-	300W (Tc)	170 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA26P20P	IXYS	MOSFET P-CH 200V 26A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,856	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	4V @ 250µA	56nC @ 10V	2740pF @ 25V	±20V	-	300W (Tc)	170 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP10P50P	IXYS	MOSFET P-CH 500V 10A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,224	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	50nC @ 10V	2840pF @ 25V	±20V	-	300W (Tc)	1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA96P085T	IXYS	MOSFET P-CH 85V 96A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 48A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	85V	96A (Tc)	10V	4V @ 250µA	180nC @ 10V	13100pF @ 25V	±15V	-	298W (Tc)	13 mOhm @ 48A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA76P10T	IXYS	MOSFET P-CH 100V 76A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,220	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	4V @ 250µA	197nC @ 10V	13700pF @ 25V	±15V	-	298W (Tc)	25 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP96P085T	IXYS	MOSFET P-CH 85V 96A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 48A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,544	MOSFET (Metal Oxide)	85V	96A (Tc)	10V	4V @ 250µA	180nC @ 10V	13100pF @ 25V	±15V	-	298W (Tc)	13 mOhm @ 48A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA3N120TRL	IXYS	MOSFET N-CH 1200V 3A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock21,972	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	5V @ 250µA	42nC @ 10V	1350pF @ 25V	±20V	-	200W (Tc)	4.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA10P50PTRL	IXYS	MOSFET P-CH 500V 10A TO-263AA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,338	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	50nC @ 10V	2840pF @ 25V	±20V	-	300W (Tc)	1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA44P15TTRL	IXYS	MOSFET P-CH 150V 44A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,632	MOSFET (Metal Oxide)	150V	44A (Tc)	10V	4V @ 250µA	175nC @ 10V	13400pF @ 25V	±15V	-	298W (Tc)	65 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTX1925	IXYS	MOSFET N-CH PLUS247-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA12N65X2	IXYS	MOSFET N-CH 650V 12A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock864	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	5V @ 250µA	18.5 nC @ 10 V	1134 pF @ 25 V	±30V	-	180W (Tc)	310mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA42N15T-TRL	IXYS	MOSFET N-CH 150V 42A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	42A (Tc)	10V	4.5V @ 250µA	21 nC @ 10 V	1880 pF @ 25 V	±30V	-	200W (Tc)	45mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFA12N65X2-TRL	IXYS	MOSFET N-CH 650V 12A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	5V @ 250µA	18.5 nC @ 10 V	1134 pF @ 25 V	±30V	-	180W (Tc)	310mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP18N65X2M	IXYS	MOSFET N-CH 650V 18A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	5V @ 1.5mA	29 nC @ 10 V	1520 pF @ 25 V	±30V	-	290W (Tc)	200mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXTP24N65X2	IXYS	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock777	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 250µA	36 nC @ 10 V	2060 pF @ 25 V	±30V	-	390W (Tc)	145mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFT28N50F	IXYS	MOSFET N-CH 28A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA2N100P-TRL	IXYS	MOSFET N-CH 1000V 2A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	2A (Tc)	10V	4.5V @ 100µA	24.3 nC @ 10 V	655 pF @ 25 V	±20V	-	86W (Tc)	7.5Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFA36N55X2	IXYS	IXFA36N55X2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH26N100X	IXYS	MOSFET N-CH 1000V 26A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 860W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	26A (Tc)	10V	6V @ 4mA	113 nC @ 10 V	3290 pF @ 25 V	±30V	-	860W (Tc)	320mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3