Page 41 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTP5N60P
IXYS

MOSFET N-CH 600V 5A TO-220

Package: TO-220-3

Stock3,792
IXTA4N80P
IXYS

MOSFET N-CH 800V 3.6A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,656
IXTP3N60P
IXYS

MOSFET N-CH 600V 3A TO-220

Package: TO-220-3

Stock4,208
IXTU02N50D
IXYS

MOSFET N-CH 500V 0.2A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,576
IXTU01N100D
IXYS

MOSFET N-CH 1000V 0.1A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock108,000
IXTP02N120P
IXYS

MOSFET N-CH 1200V 0.2A TO-220

Package: TO-220-3

Stock4,576
IXFA4N60P3
IXYS

MOSFET N-CH 600V 4A TO-263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,456
IXTU2N80P
IXYS

MOSFET N-CH TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,912
IXTA6N50P
IXYS

MOSFET N-CH 500V 6A D2-PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,352
IXTY3N60P
IXYS

MOSFET N-CH 600V 3A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,440
IXTU64N055T
IXYS

MOSFET N-CH 55V 64A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,912
IXTU55N075T
IXYS

MOSFET N-CH 75V 55A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,480
IXTU50N085T
IXYS

MOSFET N-CH 85V 50A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,928
IXTU1R4N60P
IXYS

MOSFET N-CH 600V 1.4A TO251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,160
IXTP4N60P
IXYS

MOSFET N-CH 600V 4A TO-220

Package: TO-220-3

Stock6,736
IXTA2N80P
IXYS

MOSFET N-CH 800V 2A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,344
IXTA3N50P
IXYS

MOSFET N-CH 500V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,904
IXTP6N50P
IXYS

MOSFET N-CH 500V 6A TO-220

Package: TO-220-3

Stock2,352
IXTP2N60P
IXYS

MOSFET N-CH 600V 2A TO-220

Package: TO-220-3

Stock60,000
IXTP3N50P
IXYS

MOSFET N-CH 500V 3.6A TO-220

Package: TO-220-3

Stock5,744

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTP5N60P	IXYS	MOSFET N-CH 600V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,792	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	5.5V @ 50µA	14.2nC @ 10V	750pF @ 25V	±30V	-	100W (Tc)	1.7 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA4N80P	IXYS	MOSFET N-CH 800V 3.6A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,656	MOSFET (Metal Oxide)	800V	3.6A (Tc)	10V	5.5V @ 100µA	14.2nC @ 10V	750pF @ 25V	±30V	-	100W (Tc)	3.4 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP3N60P	IXYS	MOSFET N-CH 600V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,208	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	5.5V @ 50µA	9.8nC @ 10V	411pF @ 25V	±30V	-	70W (Tc)	2.9 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTU02N50D	IXYS	MOSFET N-CH 500V 0.2A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 30 Ohm @ 50mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,576	MOSFET (Metal Oxide)	500V	200mA (Tc)	10V	5V @ 25µA	-	120pF @ 25V	±20V	Depletion Mode	1.1W (Ta), 25W (Tc)	30 Ohm @ 50mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTU01N100D	IXYS	MOSFET N-CH 1000V 0.1A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock108,000	MOSFET (Metal Oxide)	1000V	100mA (Tc)	0V	5V @ 25µA	-	120pF @ 25V	±20V	Depletion Mode	1.1W (Ta), 25W (Tc)	80 Ohm @ 50mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTP02N120P	IXYS	MOSFET N-CH 1200V 0.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 75 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,576	MOSFET (Metal Oxide)	1200V	200mA (Tc)	10V	4V @ 100µA	4.7nC @ 10V	104pF @ 25V	±20V	-	33W (Tc)	75 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFA4N60P3	IXYS	MOSFET N-CH 600V 4A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,456	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	6.9nC @ 10V	365pF @ 25V	±30V	-	114W (Tc)	2.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTU2N80P	IXYS	MOSFET N-CH TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,912	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5.5V @ 50µA	10.6nC @ 10V	440pF @ 25V	±30V	-	70W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTA6N50P	IXYS	MOSFET N-CH 500V 6A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,352	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 50µA	14.6nC @ 10V	740pF @ 25V	±30V	-	100W (Tc)	1.1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTY3N60P	IXYS	MOSFET N-CH 600V 3A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,440	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	5.5V @ 50µA	9.8nC @ 10V	411pF @ 25V	±30V	-	70W (Tc)	2.9 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTU64N055T	IXYS	MOSFET N-CH 55V 64A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,912	MOSFET (Metal Oxide)	55V	64A (Tc)	-	4V @ 25µA	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTU55N075T	IXYS	MOSFET N-CH 75V 55A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,480	MOSFET (Metal Oxide)	75V	55A (Tc)	-	4V @ 25µA	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTU50N085T	IXYS	MOSFET N-CH 85V 50A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,928	MOSFET (Metal Oxide)	85V	50A (Tc)	-	4V @ 25µA	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTU1R4N60P	IXYS	MOSFET N-CH 600V 1.4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,160	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	5.5V @ 25µA	5.2nC @ 10V	140pF @ 25V	±30V	-	50W (Tc)	9 Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IXTP4N60P	IXYS	MOSFET N-CH 600V 4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,736	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5.5V @ 100µA	13nC @ 10V	635pF @ 25V	±30V	-	89W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTA2N80P	IXYS	MOSFET N-CH 800V 2A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,344	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5.5V @ 50µA	10.6nC @ 10V	440pF @ 25V	±30V	-	70W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA3N50P	IXYS	MOSFET N-CH 500V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,904	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5.5V @ 50µA	9.3nC @ 10V	409pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP6N50P	IXYS	MOSFET N-CH 500V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,352	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 50µA	14.6nC @ 10V	740pF @ 25V	±30V	-	100W (Tc)	1.1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP2N60P	IXYS	MOSFET N-CH 600V 2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,000	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	5V @ 250µA	7nC @ 10V	240pF @ 25V	±30V	-	55W (Tc)	5.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP3N50P	IXYS	MOSFET N-CH 500V 3.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,744	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5.5V @ 50µA	9.3nC @ 10V	409pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP2R4N50P	IXYS	MOSFET N-CH 500V 2.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 3.75 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,600	MOSFET (Metal Oxide)	500V	2.4A (Tc)	10V	5.5V @ 25µA	6.1nC @ 10V	240pF @ 25V	±30V	-	55W (Tc)	3.75 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTY2N80P	IXYS	MOSFET N-CH 800V 2A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,504	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5.5V @ 50µA	10.6nC @ 10V	440pF @ 25V	±30V	-	70W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP2N80P	IXYS	MOSFET N-CH 800V 2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,992	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5.5V @ 50µA	10.6nC @ 10V	440pF @ 25V	±30V	-	70W (Tc)	6 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTY2N60P	IXYS	MOSFET N-CH 600V 2A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,360	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	5V @ 250µA	7nC @ 10V	240pF @ 25V	±30V	-	55W (Tc)	5.1 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP1R4N60P	IXYS	MOSFET N-CH 600V 1.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	5.5V @ 25µA	5.2nC @ 10V	140pF @ 25V	±30V	-	50W (Tc)	9 Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTY3N50P	IXYS	MOSFET N-CH 500V 3.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,520	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5.5V @ 50µA	9.3nC @ 10V	409pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY2R4N50P	IXYS	MOSFET N-CH 500V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 3.75 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,192	MOSFET (Metal Oxide)	500V	2.4A (Tc)	10V	5.5V @ 25µA	6.1nC @ 10V	240pF @ 25V	±30V	-	55W (Tc)	3.75 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R6N50P	IXYS	MOSFET N-CH 500V 1.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,252	MOSFET (Metal Oxide)	500V	1.6A (Tc)	10V	5.5V @ 25µA	3.9nC @ 10V	140pF @ 25V	±30V	-	43W (Tc)	6.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63