Page 40 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN110N85X
IXYS

850V/110A ULT JUNCT X-CLASS HIPE

Package: SOT-227-4, miniBLOC

Stock4,208
IXFX66N85X
IXYS

850V/66A ULTRA JUNCTION X-CLASS

Package: TO-247-3

Stock6,120
IXFK80N65X2
IXYS

MOSFET N-CH 650V 80A TO-264

Package: TO-264-3, TO-264AA

Stock6,288
IXFT170N25X3HV
IXYS

MOSFET N-CH 250V 170A TO268HV

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,904
IXFK170N25X3
IXYS

MOSFET N-CH 250V 170A TO264

Package: TO-264-3, TO-264AA

Stock6,300
IXFK100N65X2
IXYS

MOSFET N-CH 650V 100A TO-264

Package: TO-264-3, TO-264AA

Stock103,464
IXFK50N85X
IXYS

850V/50A ULTRA JUNCTION X-CLASS

Package: TO-264-3, TO-264AA

Stock4,368
IXFH50N85X
IXYS

850V/50A ULTRA JUNCTION X-CLASS

Package: TO-247-3

Stock3,216
IXFJ80N25X3
IXYS

MOSFET N-CH 250V 44A ISO TO247

Package: TO-247-3

Stock6,000
IXFH60N65X2
IXYS

MOSFET N-CH 650V 60A TO-247

Package: TO-247-3

Stock3,680
IXTT440N04T4HV
IXYS

40V/440A TRENCHT4 PWR MOSFET TO-

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,016
IXFA20N85XHV
IXYS

850V/20A ULTRA JUNCTION X-CLASS

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,024
IXFA80N25X3
IXYS

MOSFET N-CH 250V 80A TO263AA

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,648
IXTH34N65X2
IXYS

MOSFET N-CH 650V 34A TO-247

Package: TO-247-3

Stock7,280
IXFA34N65X2
IXYS

MOSFET N-CH 650V 34A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,568
IXFA22N65X2
IXYS

MOSFET N-CH 650V 22A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,744
IXTH12N65X2
IXYS

MOSFET N-CH 650V 12A TO-247

Package: TO-247-3

Stock7,024
IXTP12N65X2
IXYS

MOSFET N-CH 650V 12A TO-220

Package: TO-220-3

Stock5,344
IXTP2N65X2
IXYS

MOSFET N-CH 650V 2A X2 TO-220

Package: TO-220-3

Stock5,152
IXTY4N65X2
IXYS

MOSFET N-CH 650V 4A X2 TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,008

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN110N85X	IXYS	850V/110A ULT JUNCT X-CLASS HIPE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1170W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,208	MOSFET (Metal Oxide)	850V	110A (Tc)	10V	5.5V @ 8mA	425nC @ 10V	17000pF @ 25V	±30V	-	1170W (Tc)	33 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX66N85X	IXYS	850V/66A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,120	MOSFET (Metal Oxide)	850V	66A (Tc)	10V	5.5V @ 8mA	230nC @ 10V	8900pF @ 25V	±30V	-	1250W (Tc)	65 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK80N65X2	IXYS	MOSFET N-CH 650V 80A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8245pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,288	MOSFET (Metal Oxide)	650V	80A (Tc)	10V	5.5V @ 4mA	143nC @ 10V	8245pF @ 25V	±30V	-	890W (Tc)	40 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFT170N25X3HV	IXYS	MOSFET N-CH 250V 170A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,904	MOSFET (Metal Oxide)	250V	170A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	13500pF @ 25V	±20V	-	960W (Tc)	7.4 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFK170N25X3	IXYS	MOSFET N-CH 250V 170A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,300	MOSFET (Metal Oxide)	250V	170A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	13500pF @ 25V	±20V	-	960W (Tc)	7.4 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IXFK100N65X2	IXYS	MOSFET N-CH 650V 100A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock103,464	MOSFET (Metal Oxide)	650V	100A (Tc)	10V	5.5V @ 4mA	180nC @ 10V	11300pF @ 25V	±30V	-	1040W (Tc)	30 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFK50N85X	IXYS	850V/50A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,368	MOSFET (Metal Oxide)	850V	50A (Tc)	10V	5.5V @ 4mA	152nC @ 10V	4480pF @ 25V	±30V	-	890W (Tc)	105 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFH50N85X	IXYS	850V/50A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,216	MOSFET (Metal Oxide)	850V	50A (Tc)	10V	5.5V @ 4mA	152nC @ 10V	4480pF @ 25V	±30V	-	890W (Tc)	105 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFJ80N25X3	IXYS	MOSFET N-CH 250V 44A ISO TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFJ) Package / Case: TO-247-3	Package: TO-247-3	Stock6,000	MOSFET (Metal Oxide)	250V	44A (Tc)	10V	4.5V @ 1.5mA	83nC @ 10V	5430pF @ 25V	±20V	-	104W (Tc)	18 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFJ)	TO-247-3
IXFH60N65X2	IXYS	MOSFET N-CH 650V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-247-3	Package: TO-247-3	Stock3,680	MOSFET (Metal Oxide)	650V	60A (Tc)	10V	5.5V @ 4mA	107nC @ 10V	6180pF @ 25V	±30V	-	780W (Tc)	52 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-247-3
IXTT440N04T4HV	IXYS	40V/440A TRENCHT4 PWR MOSFET TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 440A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 940W (Tc) Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,016	MOSFET (Metal Oxide)	40V	440A (Tc)	10V	4V @ 250µA	480nC @ 10V	26000pF @ 25V	±15V	-	940W (Tc)	1.25 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFA20N85XHV	IXYS	850V/20A ULTRA JUNCTION X-CLASS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak-HV) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,024	MOSFET (Metal Oxide)	850V	20A (Tc)	10V	5.5V @ 2.5mA	63nC @ 10V	1660pF @ 25V	±30V	-	540W (Tc)	330 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak-HV)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA80N25X3	IXYS	MOSFET N-CH 250V 80A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,648	MOSFET (Metal Oxide)	250V	80A (Tc)	10V	4.5V @ 1.5mA	83nC @ 10V	5430pF @ 25V	±20V	-	390W (Tc)	16 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH34N65X2	IXYS	MOSFET N-CH 650V 34A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,280	MOSFET (Metal Oxide)	650V	34A (Tc)	10V	4.5V @ 4mA	53nC @ 10V	3120pF @ 25V	±30V	-	540W (Tc)	105 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFA34N65X2	IXYS	MOSFET N-CH 650V 34A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	650V	34A (Tc)	10V	5.5V @ 2.5mA	56nC @ 10V	3330pF @ 25V	±30V	-	540W (Tc)	105 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA22N65X2	IXYS	MOSFET N-CH 650V 22A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,744	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5.5V @ 1.5mA	38nC @ 10V	2310pF @ 25V	±30V	-	390W (Tc)	160 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH12N65X2	IXYS	MOSFET N-CH 650V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,024	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	17nC @ 10V	1100pF @ 25V	±30V	-	180W (Tc)	300 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXTP12N65X2	IXYS	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,344	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	17nC @ 10V	1100pF @ 25V	±30V	-	180W (Tc)	300 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTP2N65X2	IXYS	MOSFET N-CH 650V 2A X2 TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,152	MOSFET (Metal Oxide)	650V	2A (Tc)	10V	5V @ 250µA	4.3nC @ 10V	180pF @ 25V	±30V	-	55W (Tc)	2.3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTY4N65X2	IXYS	MOSFET N-CH 650V 4A X2 TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,008	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	5V @ 250µA	8.3nC @ 10V	455pF @ 25V	±30V	-	80W (Tc)	850 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP8N65X2	IXYS	MOSFET N-CH 650V 8A X2 TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock4,160	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	5V @ 250µA	12nC @ 10V	800pF @ 25V	±30V	-	150W (Tc)	500 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTY2N65X2	IXYS	MOSFET N-CH 650V 2A X2 TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,708	MOSFET (Metal Oxide)	650V	2A (Tc)	10V	5V @ 250µA	4.3nC @ 10V	180pF @ 25V	±30V	-	55W (Tc)	2.3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFP8N85X	IXYS	MOSFET N-CH 850V 8A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (IXFP) Package / Case: TO-220-3	Package: TO-220-3	Stock6,432	MOSFET (Metal Oxide)	850V	8A (Tc)	10V	5.5V @ 250µA	17nC @ 10V	654pF @ 25V	±30V	-	200W (Tc)	850 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (IXFP)	TO-220-3
IXFK64N60Q3	IXYS	MOSFET N-CH 600V 64A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,184	MOSFET (Metal Oxide)	600V	64A (Tc)	10V	6.5V @ 4mA	190nC @ 10V	9930pF @ 25V	±30V	-	1250W (Tc)	95 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX55N50	IXYS	MOSFET N-CH 500V 55A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock36,576	MOSFET (Metal Oxide)	500V	55A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	625W (Tc)	80 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTH1N200P3HV	IXYS	MOSFET N-CH 2000V 1A TO-247HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 40 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock6,144	MOSFET (Metal Oxide)	2000V	1A (Tc)	10V	4V @ 250µA	23.5nC @ 10V	646pF @ 25V	±20V	-	125W (Tc)	40 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
IXTR90P20P	IXYS	MOSFET P-CH 200V 53A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock6,672	MOSFET (Metal Oxide)	200V	53A (Tc)	10V	4V @ 1mA	205nC @ 10V	12000pF @ 25V	±20V	-	312W (Tc)	48 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTQ40N50L2	IXYS	MOSFET N-CH 500V 40A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock4,576	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	4.5V @ 250µA	320nC @ 10V	10400pF @ 25V	±20V	-	540W (Tc)	170 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3