Page 5 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFA3N120-TRR
IXYS

MOSFET N-CH 1200V 3A TO263

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IXFA3N120-TRL
IXYS

MOSFET N-CH 1200V 3A TO263

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IXFT54N65X3HV
IXYS

MOSFET 54A 650V X3 TO268HV

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IXFT80N65X2HV-TRL
IXYS

MOSFET N-CH 650V 80A TO268HV

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IXTA1N100P-TRL
IXYS

MOSFET N-CH 1000V 1A TO263

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IXTH24N65X2
IXYS

MOSFET N-CH 650V 24A TO247

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Stock780
IXTA94N20X4
IXYS

MOSFET 200V 94A N-CH ULTRA TO263

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Stock5,256
IXFP90N20X3
IXYS

MOSFET N-CH 200V 90A TO220

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IXTY1N80P-TRL
IXYS

MOSFET N-CH 800V 1A TO252

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IXTH1N170DHV
IXYS

MOSFET N-CH 1700V 1A TO247HV

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Stock48
IXFX210N30X3
IXYS

MOSFET N-CH 300V 210A PLUS247-3

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IXTA1N80P
IXYS

MOSFET N-CH TO263

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IXFX110N65X3
IXYS

DISCRETE MOSFET 110A 650V X3 PLU

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IXFA7N100P-TRL
IXYS

MOSFET N-CH 1000V 7A TO263

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IXFP30N25X3M
IXYS

MOSFET N-CH 250V 30A TO220

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Stock786
IXFH48N60X3
IXYS

MOSFET ULTRA JCT 600V 48A TO247

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Stock435
IXTH2N150
IXYS

DISCMOSFET N-CH STD-HIVOLTAGE TO

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IXFH60N20F
IXYS

MOSFET N-CH 60A TO247

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IXFA26N30X3
IXYS

MOSFET N-CH 300V 26A TO263AA

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Stock900
IXFN130N65X3
IXYS

DISCRETE MOSFET 130A 650V X3 SOT

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFA3N120-TRR	IXYS	MOSFET N-CH 1200V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	5V @ 1.5mA	39 nC @ 10 V	1050 pF @ 25 V	±20V	-	200W (Tc)	4.5Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFA3N120-TRL	IXYS	MOSFET N-CH 1200V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	5V @ 1.5mA	39 nC @ 10 V	1050 pF @ 25 V	±20V	-	200W (Tc)	4.5Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFT54N65X3HV	IXYS	MOSFET 54A 650V X3 TO268HV FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT80N65X2HV-TRL	IXYS	MOSFET N-CH 650V 80A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	5V @ 4mA	140 nC @ 10 V	8300 pF @ 25 V	±30V	-	890W (Tc)	38mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTA1N100P-TRL	IXYS	MOSFET N-CH 1000V 1A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	1A (Tc)	10V	4.5V @ 50µA	15.5 nC @ 10 V	331 pF @ 25 V	±20V	-	50W (Tc)	15Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTH24N65X2	IXYS	MOSFET N-CH 650V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Stock780	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 250µA	36 nC @ 10 V	2060 pF @ 25 V	±30V	-	390W (Tc)	145mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA94N20X4	IXYS	MOSFET 200V 94A N-CH ULTRA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,256	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	4.5V @ 250µA	77 nC @ 10 V	5050 pF @ 25 V	±20V	-	360W (Tc)	10.6mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP90N20X3	IXYS	MOSFET N-CH 200V 90A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	4.5V @ 1.5mA	78 nC @ 10 V	5420 pF @ 25 V	±20V	-	390W (Tc)	12.8mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTY1N80P-TRL	IXYS	MOSFET N-CH 800V 1A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	1A (Tc)	10V	4V @ 50µA	9 nC @ 10 V	250 pF @ 25 V	±30V	-	42W (Tc)	14Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTH1N170DHV	IXYS	MOSFET N-CH 1700V 1A TO247HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: -	Stock48	MOSFET (Metal Oxide)	1700 V	1A (Tj)	0V	4.5V @ 250µA	47 nC @ 5 V	3090 pF @ 25 V	±20V	Depletion Mode	290W (Tc)	16Ohm @ 500mA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
IXFX210N30X3	IXYS	MOSFET N-CH 300V 210A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	4.5V @ 8mA	375 nC @ 10 V	24200 pF @ 25 V	±20V	-	1250W (Tc)	5.5mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTA1N80P	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFX110N65X3	IXYS	DISCRETE MOSFET 110A 650V X3 PLU FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA7N100P-TRL	IXYS	MOSFET N-CH 1000V 7A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	7A (Tc)	10V	6V @ 1mA	47 nC @ 10 V	2590 pF @ 25 V	±30V	-	300W (Tc)	1.9Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP30N25X3M	IXYS	MOSFET N-CH 250V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock786	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1450 pF @ 25 V	±20V	-	36W (Tc)	60mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFH48N60X3	IXYS	MOSFET ULTRA JCT 600V 48A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock435	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	5V @ 2.5mA	38 nC @ 10 V	2730 pF @ 25 V	±20V	-	520W (Tc)	65mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXTH2N150	IXYS	DISCMOSFET N-CH STD-HIVOLTAGE TO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 9.2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1500 V	2A (Tc)	10V	5V @ 250µA	28 nC @ 10 V	830 pF @ 25 V	±30V	-	170W (Tc)	9.2Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH60N20F	IXYS	MOSFET N-CH 60A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA26N30X3	IXYS	MOSFET N-CH 300V 26A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock900	MOSFET (Metal Oxide)	300 V	26A (Tc)	10V	4.5V @ 500µA	22 nC @ 10 V	1465 pF @ 25 V	±20V	-	170W (Tc)	66mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFN130N65X3	IXYS	DISCRETE MOSFET 130A 650V X3 SOT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTY02N120P-TRL	IXYS	MOSFET N-CH 1200V 200MA TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	4V @ 100µA	4.7 nC @ 10 V	104 pF @ 25 V	±20V	-	33W (Tc)	75Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTR68P20T	IXYS	MOSFET P-CH 200V 44A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247™ Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	44A (Tc)	10V	4V @ 250µA	380 nC @ 10 V	33400 pF @ 25 V	±15V	-	270W (Tc)	64mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247™	TO-247-3
IXFQ90N20X3	IXYS	MOSFET N-CH 200V 90A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	4.5V @ 1.5mA	78 nC @ 10 V	5420 pF @ 25 V	±20V	-	390W (Tc)	12.8mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTA1R6N100D2-TRL	IXYS	MOSFET N-CH 1000V 1.6A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	1.6A (Tj)	0V	4.5V @ 100µA	27 nC @ 5 V	645 pF @ 25 V	±20V	Depletion Mode	100W (Tc)	10Ohm @ 800mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH50N80XA	IXYS	MOSFET N-CH 50A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA3N120-TRL	IXYS	MOSFET N-CH 1200V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	5V @ 250µA	42 nC @ 10 V	1350 pF @ 25 V	±20V	-	200W (Tc)	4.5Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA3N120-TRR	IXYS	MOSFET N-CH 1200V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	5V @ 250µA	42 nC @ 10 V	1350 pF @ 25 V	±20V	-	200W (Tc)	4.5Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP14N55X2M	IXYS	IXFP14N55X2M FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-