Page 6 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTA10P15T
IXYS

MOSFET P-CH 150V 10A TO263

Package: -

Request a Quote
IXFH120N25X3
IXYS

MOSFET N-CH 250V 120A TO247

Package: -

Stock624
IXFK150N30X3
IXYS

MOSFET N-CH 300V 150A TO264

Package: -

Request a Quote
IXFP72N30X3
IXYS

MOSFET N-CH 300V 72A TO220AB

Package: -

Stock1,506
IXTN240N075L2
IXYS

MOSFET N-CH 75V 225A SOT227B

Package: -

Stock15
IXTA140N055T2
IXYS

MOSFET N-CH 55V 140A TO263

Package: -

Request a Quote
IXFA34N65X3
IXYS

MOSFET 34A 650V X3 TO263

Package: -

Request a Quote
IXFK32N100X
IXYS

MOSFET N-CH 1000V 32A TO264

Package: -

Stock3
IXTP64N10L2
IXYS

MOSFET N-CH 100V 64A TO220AB

Package: -

Stock1,173
IXFH120N30X3
IXYS

MOSFET N-CH 300V 120A TO247

Package: -

Request a Quote
IXFQ72N30X3
IXYS

MOSFET N-CH 300V 72A TO3P

Package: -

Request a Quote
IXTX400N15X4
IXYS

MOSFET N-CH 150V 400A PLUS247

Package: -

Stock2,883
IXTH1R8N220P3HV
IXYS

MOSFET N-CH TO247

Package: -

Request a Quote
IXFA16N50P-TRL
IXYS

MOSFET N-CH 500V 16A TO263

Package: -

Request a Quote
IXFV12N100P
IXYS

MOSFET N-CH 12A PLUS220

Package: -

Request a Quote
IXTA32P20T-TRL
IXYS

MOSFET P-CH 200V 32A TO263

Package: -

Request a Quote
IXTY2P50PA
IXYS

AUTOMOTIVE GRADE POLARPTM P-CHAN

Package: -

Request a Quote
IXFT120N25X3HV
IXYS

MOSFET N-CH 250V 120A TO268HV

Package: -

Stock96
IXTA06N120P-TRL
IXYS

MOSFET N-CH 1200V 600MA TO263

Package: -

Stock6,420
IXFM67N10
IXYS

MOSFET N-CH 100V 67A TO204AE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTA10P15T	IXYS	MOSFET P-CH 150V 10A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	10A (Tc)	10V	4.5V @ 250µA	36 nC @ 10 V	2210 pF @ 25 V	±15V	-	83W (Ta)	350mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH120N25X3	IXYS	MOSFET N-CH 250V 120A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Stock624	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7870 pF @ 25 V	±20V	-	520W (Tc)	12mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFK150N30X3	IXYS	MOSFET N-CH 300V 150A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	150A (Tc)	10V	4.5V @ 4mA	177 nC @ 10 V	13100 pF @ 25 V	±20V	-	890W (Tc)	8.3mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFP72N30X3	IXYS	MOSFET N-CH 300V 72A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock1,506	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	390W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTN240N075L2	IXYS	MOSFET N-CH 75V 225A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: -	Stock15	MOSFET (Metal Oxide)	75 V	225A (Tc)	10V	4.5V @ 3mA	546 nC @ 10 V	19000 pF @ 25 V	±20V	-	735W (Tc)	7mOhm @ 120A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTA140N055T2	IXYS	MOSFET N-CH 55V 140A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	140A (Tc)	10V	4V @ 250µA	82 nC @ 10 V	4760 pF @ 25 V	±20V	-	250W (Ta)	5.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFA34N65X3	IXYS	MOSFET 34A 650V X3 TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5.2V @ 2.5mA	29 nC @ 10 V	2025 pF @ 25 V	±20V	-	446W (Tc)	100mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFK32N100X	IXYS	MOSFET N-CH 1000V 32A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: -	Stock3	MOSFET (Metal Oxide)	1000 V	32A (Tc)	10V	6V @ 4mA	130 nC @ 10 V	4075 pF @ 25 V	±30V	-	890W (Tc)	220mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXTP64N10L2	IXYS	MOSFET N-CH 100V 64A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock1,173	MOSFET (Metal Oxide)	100 V	64A (Tc)	10V	4.5V @ 250µA	100 nC @ 10 V	3620 pF @ 25 V	±20V	-	357W (Tc)	32mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFH120N30X3	IXYS	MOSFET N-CH 300V 120A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	120A (Tc)	10V	4.5V @ 4mA	170 nC @ 10 V	10500 pF @ 25 V	±20V	-	735W (Tc)	11mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFQ72N30X3	IXYS	MOSFET N-CH 300V 72A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	390W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTX400N15X4	IXYS	MOSFET N-CH 150V 400A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	Package: -	Stock2,883	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	4.5V @ 1mA	430 nC @ 10 V	14500 pF @ 25 V	±20V	-	1500W (Tc)	3.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTH1R8N220P3HV	IXYS	MOSFET N-CH TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA16N50P-TRL	IXYS	MOSFET N-CH 500V 16A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	5.5V @ 2.5mA	36 nC @ 10 V	2480 pF @ 25 V	±30V	-	300W (Tc)	400mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFV12N100P	IXYS	MOSFET N-CH 12A PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA32P20T-TRL	IXYS	MOSFET P-CH 200V 32A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	32A (Tc)	10V	4V @ 250µA	185 nC @ 10 V	14500 pF @ 25 V	±15V	-	300W (Tc)	130mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTY2P50PA	IXYS	AUTOMOTIVE GRADE POLARPTM P-CHAN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	2A (Tc)	10V	4.5V @ 50µA	11.9 nC @ 10 V	600 pF @ 25 V	±20V	-	58W (Tc)	4.2Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFT120N25X3HV	IXYS	MOSFET N-CH 250V 120A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268AA Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Stock96	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7870 pF @ 25 V	±20V	-	520W (Tc)	12mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTA06N120P-TRL	IXYS	MOSFET N-CH 1200V 600MA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock6,420	MOSFET (Metal Oxide)	1200 V	600mA (Tc)	10V	4V @ 50µA	13.3 nC @ 10 V	236 pF @ 25 V	±30V	-	42W (Tc)	34Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFM67N10	IXYS	MOSFET N-CH 100V 67A TO204AE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	67A (Tc)	10V	4V @ 4mA	260 nC @ 10 V	4500 pF @ 25 V	±20V	-	300W (Tc)	25mOhm @ 33.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE
IXFT50N60P3-TRL	IXYS	MOSFET N-CH 600V 50A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.04kW (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	5V @ 4mA	94 nC @ 10 V	6300 pF @ 25 V	±30V	-	1.04kW (Tc)	145mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFH98N60X3	IXYS	MOSFET ULTRA JCT 600V 98A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 49A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	98A (Tc)	10V	5V @ 4mA	90 nC @ 10 V	6250 pF @ 25 V	±20V	-	960W (Tc)	30mOhm @ 49A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA48P05T-TRL	IXYS	MOSFET P-CH 50V 48A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	4.5V @ 250µA	53 nC @ 10 V	3660 pF @ 25 V	±15V	-	150W (Tc)	30mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH220N20X3	IXYS	MOSFET N-CH 200V 220A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	220A (Tc)	10V	4.5V @ 4mA	204 nC @ 10 V	13600 pF @ 25 V	±20V	-	960W (Tc)	6.2mOhm @ 110A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFQ72N20X3	IXYS	MOSFET N-CH 200V 72A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Stock24	MOSFET (Metal Oxide)	200 V	72A (Tc)	10V	4.5V @ 1.5mA	55 nC @ 10 V	3780 pF @ 25 V	±20V	-	320W (Tc)	20mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFA80N25X3-TRL	IXYS	MOSFET N-CH 250V 80A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,815	MOSFET (Metal Oxide)	250 V	80A (Tc)	10V	4.5V @ 1.5mA	83 nC @ 10 V	5430 pF @ 25 V	±20V	-	390W (Tc)	16mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTK3N250L	IXYS	MOSFET N-CH 2500V 3A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	2500 V	3A (Tc)	10V	5V @ 1mA	230 nC @ 10 V	5400 pF @ 25 V	±20V	-	417W (Tc)	10Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFT12N50F	IXYS	MOSFET N-CH 12A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-