Page 61 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFX32N80P
IXYS

MOSFET N-CH 800V 32A PLUS247

Package: TO-247-3

Stock6,240
IXFT16N90Q
IXYS

MOSFET N-CH 900V 16A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,928
IXTJ6N150
IXYS

MOSFET N-CH 1500V 3A ISOTO-247

Package: TO-247-3

Stock3,728
IXFX140N25T
IXYS

MOSFET N-CH 250V 140A PLUS247

Package: TO-247-3

Stock2,784
IXFX170N20T
IXYS

MOSFET N-CH 200V 170A PLUS247

Package: TO-247-3

Stock5,328
IXFR26N50
IXYS

MOSFET N-CH 500V 26A ISOPLUS247

Package: ISOPLUS247?

Stock3,264
IXFH23N60Q
IXYS

MOSFET N-CH 600V 23A TO-247

Package: TO-247-3

Stock6,912
IXFH20N60Q
IXYS

MOSFET N-CH 600V 20A TO-247

Package: TO-247-3

Stock4,208
IXTH50N20
IXYS

MOSFET N-CH 200V 50A TO-247AD

Package: TO-247-3

Stock8,988
IXFH88N30P
IXYS

MOSFET N-CH 300V 88A TO-247

Package: TO-247-3

Stock4,688
IXFX180N15P
IXYS

MOSFET N-CH 150V 180A PLUS 247

Package: TO-247-3

Stock7,408
IXFK120N25P
IXYS

MOSFET N-CH 250V 120A TO-264

Package: TO-264-3, TO-264AA

Stock7,104
IXFK102N30P
IXYS

MOSFET N-CH 300V 102A TO-264

Package: TO-264-3, TO-264AA

Stock6,016
IXFT20N100P
IXYS

MOSFET N-CH 1000V 20A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,248
IXFH94N30T
IXYS

MOSFET N-CH 300V 94A TO-247

Package: TO-247-3

Stock2,368
IXFH120N25T
IXYS

MOSFET N-CH 250V 120A TO-247

Package: TO-247-3

Stock6,352
IXFT50N20
IXYS

MOSFET N-CH 200V 50A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,784
IXTH2N150L
IXYS

MOSFET N-CH 1500V 2A TO-247

Package: TO-247-3

Stock3,296
IXFK220N17T2
IXYS

MOSFET N-CH 170V 220A TO-264

Package: TO-264-3, TO-264AA

Stock2,960
IXFT6N100Q
IXYS

MOSFET N-CH 1000V 6A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,376

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFX32N80P	IXYS	MOSFET N-CH 800V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,240	MOSFET (Metal Oxide)	800V	32A (Tc)	10V	5V @ 8mA	150nC @ 10V	8800pF @ 25V	±30V	-	830W (Tc)	270 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFT16N90Q	IXYS	MOSFET N-CH 900V 16A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,928	MOSFET (Metal Oxide)	900V	16A (Tc)	10V	5V @ 4mA	170nC @ 10V	4000pF @ 25V	±20V	-	360W (Tc)	650 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTJ6N150	IXYS	MOSFET N-CH 1500V 3A ISOTO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.85 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,728	MOSFET (Metal Oxide)	1500V	3A (Tc)	10V	5V @ 250µA	67nC @ 10V	2230pF @ 25V	±30V	-	125W (Tc)	3.85 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFX140N25T	IXYS	MOSFET N-CH 250V 140A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,784	MOSFET (Metal Oxide)	250V	140A (Tc)	10V	5V @ 4mA	255nC @ 10V	19000pF @ 25V	±20V	-	960W (Tc)	17 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX170N20T	IXYS	MOSFET N-CH 200V 170A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1150W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,328	MOSFET (Metal Oxide)	200V	170A (Tc)	10V	5V @ 4mA	265nC @ 10V	19600pF @ 25V	±20V	-	1150W (Tc)	11 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFR26N50	IXYS	MOSFET N-CH 500V 26A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,264	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	4V @ 4mA	160nC @ 10V	4200pF @ 25V	±20V	-	250W (Tc)	200 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFH23N60Q	IXYS	MOSFET N-CH 600V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,912	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	3300pF @ 25V	±30V	-	400W (Tc)	320 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH20N60Q	IXYS	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,208	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	3300pF @ 25V	±30V	-	300W (Tc)	350 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH50N20	IXYS	MOSFET N-CH 200V 50A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock8,988	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	4V @ 250µA	220nC @ 10V	4600pF @ 25V	±20V	-	300W (Tc)	45 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH88N30P	IXYS	MOSFET N-CH 300V 88A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,688	MOSFET (Metal Oxide)	300V	88A (Tc)	10V	5V @ 4mA	180nC @ 10V	6300pF @ 25V	±20V	-	600W (Tc)	40 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFX180N15P	IXYS	MOSFET N-CH 150V 180A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,408	MOSFET (Metal Oxide)	150V	180A (Tc)	10V	5V @ 4mA	240nC @ 10V	7000pF @ 25V	±20V	-	830W (Tc)	11 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK120N25P	IXYS	MOSFET N-CH 250V 120A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,104	MOSFET (Metal Oxide)	250V	120A (Tc)	10V	5V @ 4mA	185nC @ 10V	8000pF @ 25V	±20V	-	700W (Tc)	24 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK102N30P	IXYS	MOSFET N-CH 300V 102A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,016	MOSFET (Metal Oxide)	300V	102A (Tc)	10V	5V @ 4mA	224nC @ 10V	7500pF @ 25V	±20V	-	700W (Tc)	33 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFT20N100P	IXYS	MOSFET N-CH 1000V 20A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,248	MOSFET (Metal Oxide)	1000V	20A (Tc)	10V	6.5V @ 1mA	126nC @ 10V	7300pF @ 25V	±30V	-	660W (Tc)	570 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFH94N30T	IXYS	MOSFET N-CH 300V 94A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,368	MOSFET (Metal Oxide)	300V	94A (Tc)	10V	5V @ 4mA	190nC @ 10V	11400pF @ 25V	±20V	-	890W (Tc)	36 mOhm @ 47A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH120N25T	IXYS	MOSFET N-CH 250V 120A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,352	MOSFET (Metal Oxide)	250V	120A (Tc)	10V	5V @ 4mA	180nC @ 10V	11300pF @ 25V	±20V	-	890W (Tc)	23 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT50N20	IXYS	MOSFET N-CH 200V 50A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,784	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	4V @ 4mA	220nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	45 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTH2N150L	IXYS	MOSFET N-CH 1500V 2A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 8.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 15 Ohm @ 1A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,296	MOSFET (Metal Oxide)	1500V	2A (Tc)	20V	8.5V @ 250µA	72nC @ 20V	1470pF @ 25V	±30V	-	290W (Tc)	15 Ohm @ 1A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFK220N17T2	IXYS	MOSFET N-CH 170V 220A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,960	MOSFET (Metal Oxide)	170V	220A (Tc)	10V	5V @ 8mA	500nC @ 10V	31000pF @ 25V	±20V	-	1250W (Tc)	6.3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFT6N100Q	IXYS	MOSFET N-CH 1000V 6A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,376	MOSFET (Metal Oxide)	1000V	6A (Tc)	10V	4.5V @ 2.5mA	48nC @ 10V	2200pF @ 25V	±20V	-	180W (Tc)	1.9 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTR90P10P	IXYS	MOSFET P-CH 100V 57A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,544	MOSFET (Metal Oxide)	100V	57A (Tc)	10V	4V @ 250µA	120nC @ 10V	5800pF @ 25V	±20V	-	190W (Tc)	27 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTR20P50P	IXYS	MOSFET P-CH 500V 13A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,176	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4.5V @ 250µA	103nC @ 10V	5120pF @ 25V	±20V	-	190W (Tc)	490 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFX220N17T2	IXYS	MOSFET N-CH 170V 220A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,976	MOSFET (Metal Oxide)	170V	220A (Tc)	10V	5V @ 8mA	500nC @ 10V	31000pF @ 25V	±20V	-	1250W (Tc)	6.3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFH50N60X	IXYS	MOSFET N-CH 600V 50A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,328	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	4.5V @ 4mA	116nC @ 10V	4660pF @ 25V	±30V	-	660W (Tc)	73 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXTT16N10D2	IXYS	MOSFET N-CH 100V 16A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 225nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 8A, 0V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,648	MOSFET (Metal Oxide)	100V	16A (Tc)	0V	-	225nC @ 5V	5700pF @ 25V	±20V	Depletion Mode	830W (Tc)	64 mOhm @ 8A, 0V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT24N50Q	IXYS	MOSFET N-CH 500V 24A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,016	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4.5V @ 4mA	95nC @ 10V	3900pF @ 25V	±20V	-	300W (Tc)	230 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFK360N10T	IXYS	MOSFET N-CH 100V 360A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 525nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 33000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,800	MOSFET (Metal Oxide)	100V	360A (Tc)	10V	5V @ 3mA	525nC @ 10V	33000pF @ 25V	±20V	-	1250W (Tc)	2.9 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFR24N50	IXYS	MOSFET N-CH 500V 24A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock5,568	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4V @ 4mA	160nC @ 10V	4200pF @ 25V	±20V	-	250W (Tc)	230 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?