Page 62 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTH30N25
IXYS

MOSFET N-CH 250V 30A TO-247

Package: TO-247-3

Stock390,000
IXFH12N120P
IXYS

MOSFET N-CH 1200V 12A TO-247

Package: TO-247-3

Stock6,688
IXFK88N30P
IXYS

MOSFET N-CH 300V 88A TO-264

Package: TO-264-3, TO-264AA

Stock3,792
IXFH11N80
IXYS

MOSFET N-CH 800V 11A TO-247AD

Package: TO-247-3

Stock2,704
IXTH50N30
IXYS

MOSFET N-CH 300V 50A TO-247

Package: TO-247-3

Stock5,888
IXFT13N80Q
IXYS

MOSFET N-CH 800V 13A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,312
IXFH94N30P3
IXYS

MOSFET N-CH 300V 94A TO-247

Package: TO-247-3

Stock7,488
IXFR24N90P
IXYS

MOSFET N-CH 900V 13A ISOPLUS247

Package: ISOPLUS247?

Stock2,160
IXFX62N25
IXYS

MOSFET N-CH 250V 62A PLUS247

Package: TO-247-3

Stock4,944
IXFX120N25P
IXYS

MOSFET N-CH 250V 120A PLUS247

Package: TO-247-3

Stock2,784
IXFQ60N60X
IXYS

MOSFET N-CH 600V 60A TO3P

Package: TO-3P-3, SC-65-3

Stock7,312
IXFK74N50P2
IXYS

MOSFET N-CH 500V 74A TO264

Package: TO-264-3, TO-264AA

Stock3,312
IXFH60N60X
IXYS

MOSFET N-CH 600V 60A TO247

Package: TO-247-3

Stock6,736
IXTT500N04T2
IXYS

MOSFET N-CH 40V 500A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,040
IXTT440N055T2
IXYS

MOSFET N-CH 55V 440A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock4,160
IXTT88N15
IXYS

MOSFET N-CH 150V 88A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,456
IXTT12N150
IXYS

MOSFET N-CH 1500V 12A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,088
IXFX200N10P
IXYS

MOSFET N-CH 100V 200A PLUS247

Package: TO-247-3

Stock6,096
IXTH12N150
IXYS

MOSFET N-CH 1500V 12A TO-247

Package: TO-247-3

Stock6,736
IXTH13N80
IXYS

MOSFET N-CH 800V 13A TO-247

Package: TO-247-3

Stock7,952

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTH30N25	IXYS	MOSFET N-CH 250V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	250V	30A (Tc)	10V	4V @ 250µA	136nC @ 10V	3950pF @ 25V	±20V	-	200W (Tc)	75 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH12N120P	IXYS	MOSFET N-CH 1200V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,688	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	6.5V @ 1mA	103nC @ 10V	5400pF @ 25V	±30V	-	543W (Tc)	1.35 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK88N30P	IXYS	MOSFET N-CH 300V 88A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,792	MOSFET (Metal Oxide)	300V	88A (Tc)	10V	5V @ 4mA	180nC @ 10V	6300pF @ 25V	±20V	-	600W (Tc)	40 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFH11N80	IXYS	MOSFET N-CH 800V 11A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,704	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	4.5V @ 4mA	155nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	950 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH50N30	IXYS	MOSFET N-CH 300V 50A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,888	MOSFET (Metal Oxide)	300V	50A (Tc)	10V	4V @ 250µA	165nC @ 10V	4400pF @ 25V	±30V	-	400W (Tc)	65 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFT13N80Q	IXYS	MOSFET N-CH 800V 13A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,312	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	3250pF @ 25V	±20V	-	250W (Tc)	700 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFH94N30P3	IXYS	MOSFET N-CH 300V 94A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,488	MOSFET (Metal Oxide)	300V	94A (Tc)	10V	5V @ 4mA	102nC @ 10V	5510pF @ 25V	±20V	-	1040W (Tc)	36 mOhm @ 47A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFR24N90P	IXYS	MOSFET N-CH 900V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,160	MOSFET (Metal Oxide)	900V	13A (Tc)	10V	6.5V @ 1mA	130nC @ 10V	7200pF @ 25V	±30V	-	230W (Tc)	460 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFX62N25	IXYS	MOSFET N-CH 250V 62A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,944	MOSFET (Metal Oxide)	250V	62A (Tc)	10V	4V @ 4mA	240nC @ 10V	6600pF @ 25V	±20V	-	390W (Tc)	35 mOhm @ 31A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX120N25P	IXYS	MOSFET N-CH 250V 120A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,784	MOSFET (Metal Oxide)	250V	120A (Tc)	10V	5V @ 4mA	185nC @ 10V	8000pF @ 25V	±20V	-	700W (Tc)	24 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFQ60N60X	IXYS	MOSFET N-CH 600V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,312	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	4.5V @ 8mA	143nC @ 10V	5800pF @ 25V	±30V	-	890W (Tc)	55 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFK74N50P2	IXYS	MOSFET N-CH 500V 74A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1400W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,312	MOSFET (Metal Oxide)	500V	74A (Tc)	10V	5V @ 4mA	165nC @ 10V	9900pF @ 25V	±30V	-	1400W (Tc)	77 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFH60N60X	IXYS	MOSFET N-CH 600V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,736	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	4.5V @ 8mA	143nC @ 10V	5800pF @ 25V	±30V	-	890W (Tc)	55 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXTT500N04T2	IXYS	MOSFET N-CH 40V 500A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,040	MOSFET (Metal Oxide)	40V	500A (Tc)	10V	3.5V @ 250µA	405nC @ 10V	25000pF @ 25V	±20V	-	1000W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT440N055T2	IXYS	MOSFET N-CH 55V 440A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 440A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock4,160	MOSFET (Metal Oxide)	55V	440A (Tc)	10V	4V @ 250µA	405nC @ 10V	25000pF @ 25V	±20V	-	1000W (Tc)	1.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT88N15	IXYS	MOSFET N-CH 150V 88A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,456	MOSFET (Metal Oxide)	150V	88A (Tc)	10V	4V @ 250µA	170nC @ 10V	4000pF @ 25V	±20V	-	400W (Tc)	22 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT12N150	IXYS	MOSFET N-CH 1500V 12A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,088	MOSFET (Metal Oxide)	1500V	12A (Tc)	10V	4.5V @ 250µA	106nC @ 10V	3720pF @ 25V	±30V	-	890W (Tc)	2 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFX200N10P	IXYS	MOSFET N-CH 100V 200A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,096	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	5V @ 8mA	235nC @ 10V	7600pF @ 25V	±20V	-	830W (Tc)	7.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTH12N150	IXYS	MOSFET N-CH 1500V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,736	MOSFET (Metal Oxide)	1500V	12A (Tc)	10V	4.5V @ 250µA	106nC @ 10V	3720pF @ 25V	±30V	-	890W (Tc)	2 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH13N80	IXYS	MOSFET N-CH 800V 13A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,952	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4.5V @ 250µA	170nC @ 10V	4500pF @ 25V	±20V	-	300W (Tc)	800 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFK32N80P	IXYS	MOSFET N-CH 800V 32A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,384	MOSFET (Metal Oxide)	800V	32A (Tc)	10V	5V @ 8mA	150nC @ 10V	8800pF @ 25V	±30V	-	830W (Tc)	270 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFR70N15	IXYS	MOSFET N-CH 150V 67A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock103,464	MOSFET (Metal Oxide)	150V	67A (Tc)	10V	4V @ 4mA	180nC @ 10V	3600pF @ 25V	±20V	-	250W (Tc)	28 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTH30N50L	IXYS	MOSFET N-CH 500V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	4.5V @ 250µA	240nC @ 10V	10200pF @ 25V	±20V	-	400W (Tc)	200 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFR44N50P	IXYS	MOSFET N-CH 500V 24A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,264	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	5V @ 4mA	98nC @ 10V	5440pF @ 25V	±30V	-	208W (Tc)	150 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFK120N30T	IXYS	MOSFET N-CH 300V 120A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,848	MOSFET (Metal Oxide)	300V	120A (Tc)	10V	5V @ 4mA	265nC @ 10V	20000pF @ 25V	±20V	-	960W (Tc)	24 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTH80N20L	IXYS	MOSFET N-CH 200V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,936	MOSFET (Metal Oxide)	200V	80A (Tc)	10V	4V @ 250µA	180nC @ 10V	6160pF @ 25V	±20V	-	520W (Tc)	32 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH500N04T2	IXYS	MOSFET N-CH 40V 500A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,976	MOSFET (Metal Oxide)	40V	500A (Tc)	10V	3.5V @ 250µA	405nC @ 10V	25000pF @ 25V	±20V	-	1000W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFT40N30Q	IXYS	MOSFET N-CH 300V 40A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,240	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	140nC @ 10V	3100pF @ 25V	±20V	-	300W (Tc)	80 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA