Page 68 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFX44N50Q
IXYS

MOSFET N-CH 500V 44A PLUS247

Package: TO-247-3

Stock103,464
IXFT12N100
IXYS

MOSFET N-CH 1000V 12A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,096
IXTK90N15
IXYS

MOSFET N-CH 150V 90A TO-264

Package: TO-264-3, TO-264AA

Stock6,544
IXFX12N90Q
IXYS

MOSFET N-CH 900V 12A PLUS247

Package: TO-247-3

Stock5,120
IXFX90N60X
IXYS

MOSFET N-CH 600V 90A PLUS247

Package: TO-247-3

Stock3,664
IXFR44N80P
IXYS

MOSFET N-CH 800V 25A ISOPLUS247

Package: ISOPLUS247?

Stock7,392
IXTH24N50L
IXYS

MOSFET N-CH 500V 24A TO-247

Package: TO-247-3

Stock3,648
IXTH12N100L
IXYS

MOSFET N-CH 1000V 12A TO-247

Package: TO-247-3

Stock7,152
IXTH14N100
IXYS

MOSFET N-CH 1000V 14A TO-247

Package: TO-247-3

Stock390,000
IXTT10P50
IXYS

MOSFET P-CH 500V 10A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,264
IXFH23N80Q
IXYS

MOSFET N-CH 800V 23A TO-247

Package: TO-247-3

Stock6,688
IXFH20N80Q
IXYS

MOSFET N-CH 800V 20A TO-247AD

Package: TO-247-3

Stock2,336
IXTH40N50L2
IXYS

MOSFET N-CH 500V 40A TO-247

Package: TO-247-3

Stock390,000
IXFX90N20Q
IXYS

MOSFET N-CH 200V 90A PLUS247

Package: TO-247-3

Stock7,648
IXFT52N30Q
IXYS

MOSFET N-CH 300V 52A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,520
MKE11R600DCGFC
IXYS

MOSFET N-CH 600V 15A I4-PAC

Package: i4-Pac?-5

Stock4,048
IXFH13N100
IXYS

MOSFET N-CH 1000V 12.5A TO-247

Package: TO-247-3

Stock3,696
IXFT16N120P
IXYS

MOSFET N-CH 1200V 16A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,008
IXKC25N80C
IXYS

MOSFET N-CH 800V 25A ISOPLUS220

Package: ISOPLUS220?

Stock4,576
IXTR140P10T
IXYS

MOSFET P-CH 100V 90A ISOPLUS247

Package: TO-247-3

Stock7,984

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFX44N50Q	IXYS	MOSFET N-CH 500V 44A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	4V @ 4mA	190nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFT12N100	IXYS	MOSFET N-CH 1000V 12A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,096	MOSFET (Metal Oxide)	1000V	12A (Tc)	10V	4.5V @ 4mA	155nC @ 10V	4000pF @ 25V	±20V	-	300W (Tc)	1.05 Ohm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTK90N15	IXYS	MOSFET N-CH 150V 90A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,544	MOSFET (Metal Oxide)	150V	90A (Tc)	10V	4V @ 250µA	240nC @ 10V	6400pF @ 25V	±20V	-	390W (Tc)	16 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFX12N90Q	IXYS	MOSFET N-CH 900V 12A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,120	MOSFET (Metal Oxide)	900V	12A (Tc)	10V	5.5V @ 4mA	90nC @ 10V	2900pF @ 25V	±20V	-	300W (Tc)	900 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX90N60X	IXYS	MOSFET N-CH 600V 90A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1100W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,664	MOSFET (Metal Oxide)	600V	90A (Tc)	10V	4.5V @ 8mA	210nC @ 10V	8500pF @ 25V	±30V	-	1100W (Tc)	38 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFR44N80P	IXYS	MOSFET N-CH 800V 25A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,392	MOSFET (Metal Oxide)	800V	25A (Tc)	10V	5V @ 8mA	200nC @ 10V	12000pF @ 25V	±30V	-	300W (Tc)	200 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTH24N50L	IXYS	MOSFET N-CH 500V 24A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,648	MOSFET (Metal Oxide)	500V	24A (Tc)	20V	5V @ 250µA	160nC @ 20V	2500pF @ 25V	±30V	-	400W (Tc)	300 mOhm @ 500mA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH12N100L	IXYS	MOSFET N-CH 1000V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,152	MOSFET (Metal Oxide)	1000V	12A (Tc)	20V	5V @ 250µA	155nC @ 20V	2500pF @ 25V	±30V	-	400W (Tc)	1.3 Ohm @ 500mA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH14N100	IXYS	MOSFET N-CH 1000V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 820 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	4.5V @ 250µA	195nC @ 10V	5650pF @ 25V	±20V	-	360W (Tc)	820 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTT10P50	IXYS	MOSFET P-CH 500V 10A TO-268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,264	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	5V @ 250µA	160nC @ 10V	4700pF @ 25V	±20V	-	300W (Tc)	900 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFH23N80Q	IXYS	MOSFET N-CH 800V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,688	MOSFET (Metal Oxide)	800V	23A (Tc)	10V	4.5V @ 3mA	130nC @ 10V	4900pF @ 25V	±30V	-	500W (Tc)	420 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH20N80Q	IXYS	MOSFET N-CH 800V 20A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,336	MOSFET (Metal Oxide)	800V	20A (Tc)	10V	4.5V @ 4mA	200nC @ 10V	5100pF @ 25V	±20V	-	360W (Tc)	420 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH40N50L2	IXYS	MOSFET N-CH 500V 40A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	4.5V @ 250µA	320nC @ 10V	10400pF @ 25V	±20V	-	540W (Tc)	170 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFX90N20Q	IXYS	MOSFET N-CH 200V 90A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,648	MOSFET (Metal Oxide)	200V	90A (Tc)	10V	4V @ 4mA	190nC @ 10V	6800pF @ 25V	±20V	-	500W (Tc)	22 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFT52N30Q	IXYS	MOSFET N-CH 300V 52A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,520	MOSFET (Metal Oxide)	300V	52A (Tc)	10V	4V @ 4mA	150nC @ 10V	5300pF @ 25V	±20V	-	360W (Tc)	60 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
MKE11R600DCGFC	IXYS	MOSFET N-CH 600V 15A I4-PAC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	Package: i4-Pac?-5	Stock4,048	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	3.5V @ 790µA	52nC @ 10V	2000pF @ 100V	±20V	-	-	165 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5
IXFH13N100	IXYS	MOSFET N-CH 1000V 12.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,696	MOSFET (Metal Oxide)	1000V	12.5A (Tc)	10V	4.5V @ 4mA	155nC @ 10V	4000pF @ 25V	±20V	-	300W (Tc)	900 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT16N120P	IXYS	MOSFET N-CH 1200V 16A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,008	MOSFET (Metal Oxide)	1200V	16A (Tc)	10V	6.5V @ 1mA	120nC @ 10V	6900pF @ 25V	±30V	-	660W (Tc)	950 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXKC25N80C	IXYS	MOSFET N-CH 800V 25A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock4,576	MOSFET (Metal Oxide)	800V	25A (Tc)	10V	4V @ 2mA	180nC @ 10V	4600pF @ 25V	±20V	Super Junction	-	150 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTR140P10T	IXYS	MOSFET P-CH 100V 90A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock7,984	MOSFET (Metal Oxide)	100V	110A (Tc)	10V	4V @ 250µA	400nC @ 10V	31400pF @ 25V	±15V	-	270W (Tc)	13 mOhm @ 70A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXFK33N50	IXYS	MOSFET N-CH 500V 33A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,152	MOSFET (Metal Oxide)	500V	33A (Tc)	10V	4V @ 4mA	227nC @ 10V	5700pF @ 25V	±20V	-	416W (Tc)	160 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFT18N100Q3	IXYS	MOSFET N-CH 1000V 18A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,088	MOSFET (Metal Oxide)	1000V	18A (Tc)	10V	6.5V @ 4mA	90nC @ 10V	4890pF @ 25V	±30V	-	830W (Tc)	660 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT44N50Q3	IXYS	MOSFET N-CH 500V 44A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,520	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	6.5V @ 4mA	93nC @ 10V	4800pF @ 25V	±30V	-	830W (Tc)	140 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFR15N80Q	IXYS	MOSFET N-CH 800V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock4,960	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4.5V @ 4mA	90nC @ 10V	4300pF @ 25V	±20V	-	250W (Tc)	600 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFX15N100	IXYS	MOSFET N-CH 1KV 15A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,520	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	4.5V @ 4mA	220nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	700 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFT80N20Q	IXYS	MOSFET N-CH 200V 80A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,344	MOSFET (Metal Oxide)	200V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4600pF @ 25V	±20V	-	360W (Tc)	28 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFH74N20	IXYS	MOSFET N-CH 200V 74A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,872	MOSFET (Metal Oxide)	200V	74A (Tc)	10V	4V @ 4mA	280nC @ 10V	5400pF @ 25V	±20V	-	360W (Tc)	30 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK15N100Q	IXYS	MOSFET N-CH 1000V 15A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,680	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	5V @ 4mA	170nC @ 10V	4500pF @ 25V	±20V	-	360W (Tc)	700 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA