Page 69 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTK180N15
IXYS

MOSFET N-CH 150V 180A TO-264

Package: TO-264-3, TO-264AA

Stock4,944
IXTK120N25
IXYS

MOSFET N-CH 250V 120A TO-264

Package: TO-264-3, TO-264AA

Stock4,768
IXFX250N10P
IXYS

MOSFET N-CH 100V 250A PLUS247

Package: TO-247-3

Stock5,072
IXFX170N20P
IXYS

MOSFET N-CH 200V 170A PLUS247

Package: TO-247-3

Stock7,280
IXFK220N15P
IXYS

MOSFET N-CH 150V 220A TO-264

Package: TO-264-3, TO-264AA

Stock5,888
IXTK600N04T2
IXYS

MOSFET N-CH 40V 600A TO-264

Package: TO-264-3, TO-264AA

Stock6,512
IXTK550N055T2
IXYS

MOSFET N-CH 55V 550A TO-264

Package: TO-264-3, TO-264AA

Stock7,824
IXKR40N60C
IXYS

MOSFET N-CH 600V 38A ISOPLUS247

Package: ISOPLUS247?

Stock5,248
IXFK180N085
IXYS

MOSFET N-CH 85V 180A TO-264AA

Package: TO-264-3, TO-264AA

Stock6,496
IXFK180N07
IXYS

MOSFET N-CH 70V 180A TO-264AA

Package: TO-264-3, TO-264AA

Stock4,816
IXFT20N80Q
IXYS

MOSFET N-CH 800V 20A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,504
IXTX550N055T2
IXYS

MOSFET N-CH 55V 550A PLUS247

Package: TO-247-3

Stock4,240
IXFX180N085
IXYS

MOSFET N-CH 85V 180A PLUS247

Package: TO-247-3

Stock4,944
IXFX150N15
IXYS

MOSFET N-CH 150V 150A PLUS247

Package: TO-247-3

Stock5,920
IXFX100N25
IXYS

MOSFET N-CH 250V 100A PLUS247

Package: TO-247-3

Stock103,464
IXFR16N120P
IXYS

MOSFET N-CH 1200V 9A ISOPLUS247

Package: ISOPLUS247?

Stock3,408
IXFX180N07
IXYS

MOSFET N-CH 70V 180A PLUS247

Package: TO-247-3

Stock2,160
IXFX180N10
IXYS

MOSFET N-CH 100V 180A PLUS247

Package: TO-247-3

Stock13,980
IXTX600N04T2
IXYS

MOSFET N-CH 40V 600A PLUS247

Package: TO-247-3

Stock4,672
IXFX73N30Q
IXYS

MOSFET N-CH 300V 73A PLUS247

Package: TO-247-3

Stock6,576

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTK180N15	IXYS	MOSFET N-CH 150V 180A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,944	MOSFET (Metal Oxide)	150V	180A (Tc)	10V	4V @ 250µA	240nC @ 10V	7000pF @ 25V	±20V	-	730W (Tc)	9 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK120N25	IXYS	MOSFET N-CH 250V 120A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,768	MOSFET (Metal Oxide)	250V	120A (Tc)	10V	4V @ 250µA	360nC @ 10V	7700pF @ 25V	±20V	-	730W (Tc)	20 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFX250N10P	IXYS	MOSFET N-CH 100V 250A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,072	MOSFET (Metal Oxide)	100V	250A (Tc)	10V	5V @ 1mA	205nC @ 10V	16000pF @ 25V	±20V	-	1250W (Tc)	6.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX170N20P	IXYS	MOSFET N-CH 200V 170A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,280	MOSFET (Metal Oxide)	200V	170A (Tc)	10V	5V @ 1mA	185nC @ 10V	11400pF @ 25V	±20V	-	1250W (Tc)	14 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK220N15P	IXYS	MOSFET N-CH 150V 220A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,888	MOSFET (Metal Oxide)	150V	220A (Tc)	10V	4.5V @ 8mA	162nC @ 10V	15400pF @ 25V	±20V	-	1250W (Tc)	9 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTK600N04T2	IXYS	MOSFET N-CH 40V 600A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,512	MOSFET (Metal Oxide)	40V	600A (Tc)	10V	3.5V @ 250µA	590nC @ 10V	40000pF @ 25V	±20V	-	1250W (Tc)	1.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK550N055T2	IXYS	MOSFET N-CH 55V 550A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,824	MOSFET (Metal Oxide)	55V	550A (Tc)	10V	4V @ 250µA	595nC @ 10V	40000pF @ 25V	±20V	-	1250W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXKR40N60C	IXYS	MOSFET N-CH 600V 38A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock5,248	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	3.9V @ 3mA	250nC @ 10V	-	±20V	Super Junction	-	70 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFK180N085	IXYS	MOSFET N-CH 85V 180A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,496	MOSFET (Metal Oxide)	85V	180A (Tc)	10V	4V @ 8mA	320nC @ 10V	9100pF @ 25V	±20V	-	560W (Tc)	7 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK180N07	IXYS	MOSFET N-CH 70V 180A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,816	MOSFET (Metal Oxide)	70V	180A (Tc)	10V	4V @ 8mA	420nC @ 10V	9400pF @ 25V	±20V	-	568W (Tc)	6 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFT20N80Q	IXYS	MOSFET N-CH 800V 20A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,504	MOSFET (Metal Oxide)	800V	20A (Tc)	10V	4.5V @ 4mA	200nC @ 10V	5100pF @ 25V	±20V	-	360W (Tc)	420 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTX550N055T2	IXYS	MOSFET N-CH 55V 550A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,240	MOSFET (Metal Oxide)	55V	550A (Tc)	10V	4V @ 250µA	595nC @ 10V	40000pF @ 25V	±20V	-	1250W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX180N085	IXYS	MOSFET N-CH 85V 180A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,944	MOSFET (Metal Oxide)	85V	180A (Tc)	10V	4V @ 8mA	320nC @ 10V	9100pF @ 25V	±20V	-	560W (Tc)	7 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX150N15	IXYS	MOSFET N-CH 150V 150A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,920	MOSFET (Metal Oxide)	150V	150A (Tc)	10V	4V @ 8mA	360nC @ 10V	9100pF @ 25V	±20V	-	560W (Tc)	12.5 mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX100N25	IXYS	MOSFET N-CH 250V 100A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	250V	100A (Tc)	10V	4V @ 8mA	300nC @ 10V	9100pF @ 25V	±20V	-	560W (Tc)	27 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFR16N120P	IXYS	MOSFET N-CH 1200V 9A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.04 Ohm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,408	MOSFET (Metal Oxide)	1200V	9A (Tc)	10V	6.5V @ 1mA	120nC @ 10V	6900pF @ 25V	±30V	-	230W (Tc)	1.04 Ohm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFX180N07	IXYS	MOSFET N-CH 70V 180A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,160	MOSFET (Metal Oxide)	70V	180A (Tc)	10V	4V @ 8mA	420nC @ 10V	9400pF @ 25V	±20V	-	568W (Tc)	6 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX180N10	IXYS	MOSFET N-CH 100V 180A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock13,980	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 8mA	390nC @ 10V	10900pF @ 25V	±20V	-	560W (Tc)	8 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTX600N04T2	IXYS	MOSFET N-CH 40V 600A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,672	MOSFET (Metal Oxide)	40V	600A (Tc)	10V	3.5V @ 250µA	590nC @ 10V	40000pF @ 25V	±20V	-	1250W (Tc)	1.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX73N30Q	IXYS	MOSFET N-CH 300V 73A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,576	MOSFET (Metal Oxide)	300V	73A (Tc)	10V	4V @ 4mA	195nC @ 10V	5400pF @ 25V	±30V	-	500W (Tc)	45 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFX26N60Q	IXYS	MOSFET N-CH 600V 26A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,624	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	4.5V @ 4mA	200nC @ 10V	5100pF @ 25V	±20V	-	360W (Tc)	250 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFH36N55Q2	IXYS	MOSFET N-CH 550V 36A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,156	MOSFET (Metal Oxide)	550V	36A (Tc)	10V	5V @ 4mA	110nC @ 10V	4100pF @ 25V	±30V	-	560W (Tc)	180 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTR40P50P	IXYS	MOSFET P-CH 500V 22A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,744	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 1mA	205nC @ 10V	11500pF @ 25V	±20V	-	312W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTD5N100A	IXYS	MOSFET N-CH 1000V 5A DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock5,168	MOSFET (Metal Oxide)	1000V	5A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	Die	Die
IXFH12N120	IXYS	MOSFET N-CH 1200V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock2,000	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	5V @ 4mA	95nC @ 10V	3400pF @ 25V	±30V	-	500W (Tc)	1.4 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK32N90P	IXYS	MOSFET N-CH 900V 32A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,408	MOSFET (Metal Oxide)	900V	32A (Tc)	10V	6.5V @ 1mA	215nC @ 10V	10600pF @ 25V	±30V	-	960W (Tc)	300 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXKH47N60C	IXYS	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 650nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXKH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,024	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 2mA	650nC @ 10V	-	±20V	Super Junction	-	70 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXKH)	TO-247-3
IXFX32N90P	IXYS	MOSFET N-CH 900V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,440	MOSFET (Metal Oxide)	900V	32A (Tc)	10V	6.5V @ 1mA	215nC @ 10V	10600pF @ 25V	±30V	-	960W (Tc)	300 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3