Page 73 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTX200N10L2
IXYS

MOSFET N-CH 100V 200A PLUS247

Package: TO-247-3

Stock3,440
IXFB170N30P
IXYS

MOSFET N-CH TO-264

Package: TO-264-3, TO-264AA

Stock66,108
IXFR55N50
IXYS

MOSFET N-CH 500V 48A ISOPLUS247

Package: ISOPLUS247?

Stock97,200
IXFB300N10P
IXYS

MOSFET N-CH 100V 300A PLUS264

Package: TO-264-3, TO-264AA

Stock2,864
IXFB210N20P
IXYS

MOSFET N-CH 200V 210A PLUS264

Package: TO-264-3, TO-264AA

Stock7,584
IXFL55N50
IXYS

MOSFET N-CH 500V 55A TO-264AA

Package: TO-264-3, TO-264AA

Stock4,832
IXFG55N50
IXYS

MOSFET N-CH 500V 48A ISO264

Package: ISO264?

Stock6,096
IXFL44N100P
IXYS

MOSFET N-CH 1000V 22A I5-PAK

Package: ISOPLUSi5-Pak?

Stock3,200
IXFK44N55Q
IXYS

MOSFET N-CH 550V 44A 0TO-264

Package: TO-264-3, TO-264AA

Stock7,504
IXTH60N10
IXYS

MOSFET N-CH 100V 60A TO-247

Package: TO-247-3

Stock390,000
IXFE180N10
IXYS

MOSFET N-CH 100V 176A ISOPLUS227

Package: SOT-227-4, miniBLOC

Stock2,272
IXTR210P10T
IXYS

MOSFET P-CH 100V 158A ISOPLUS247

Package: TO-247-3

Stock3,200
IXTR120P20T
IXYS

MOSFET P-CH 200V 90A ISOPLUS247

Package: TO-247-3

Stock2,192
MKE38RK600DFELB-TRR
IXYS

MOSFET N-CH 600V 50A SMPD

Package: 9-SMD Module

Stock3,920
IXFR50N50
IXYS

MOSFET N-CH 500V 43A ISOPLUS247

Package: ISOPLUS247?

Stock2,528
IXFL82N60P
IXYS

MOSFET N-CH 600V 55A ISOPLUS 264

Package: ISOPLUS264?

Stock7,424
IXFL100N50P
IXYS

MOSFET N-CH 500V 70A ISOPLUS264

Package: ISOPLUS264?

Stock4,384
IXFX44N55Q
IXYS

MOSFET N-CH 550V 44A PLUS247

Package: TO-247-3

Stock103,464
FMD47-06KC5
IXYS

MOSFET N-CH 600V 47A I4-PAC-5

Package: i4-Pac?-5

Stock6,512
FDM47-06KC5
IXYS

MOSFET N-CH 600V 47A I4-PAC-5

Package: i4-Pac?-5

Stock4,768

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTX200N10L2	IXYS	MOSFET N-CH 100V 200A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,440	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4.5V @ 3mA	540nC @ 10V	23000pF @ 25V	±20V	-	1040W (Tc)	11 mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFB170N30P	IXYS	MOSFET N-CH TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock66,108	MOSFET (Metal Oxide)	300V	170A (Tc)	10V	4.5V @ 1mA	258nC @ 10V	20000pF @ 25V	±20V	-	1250W (Tc)	18 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFR55N50	IXYS	MOSFET N-CH 500V 48A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock97,200	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	400W (Tc)	90 mOhm @ 27.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFB300N10P	IXYS	MOSFET N-CH 100V 300A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,864	MOSFET (Metal Oxide)	100V	300A (Tc)	10V	5V @ 8mA	279nC @ 10V	23000pF @ 25V	±20V	-	1500W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFB210N20P	IXYS	MOSFET N-CH 200V 210A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1500W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,584	MOSFET (Metal Oxide)	200V	210A (Tc)	10V	4.5V @ 8mA	255nC @ 10V	18600pF @ 25V	±20V	-	1500W (Tc)	10.5 mOhm @ 105A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFL55N50	IXYS	MOSFET N-CH 500V 55A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,832	MOSFET (Metal Oxide)	500V	55A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS264?	TO-264-3, TO-264AA
IXFG55N50	IXYS	MOSFET N-CH 500V 48A ISO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO264? Package / Case: ISO264?	Package: ISO264?	Stock6,096	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	400W (Tc)	90 mOhm @ 27.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISO264?	ISO264?
IXFL44N100P	IXYS	MOSFET N-CH 1000V 22A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUSi5-Pak?	Package: ISOPLUSi5-Pak?	Stock3,200	MOSFET (Metal Oxide)	1000V	22A (Tc)	10V	6.5V @ 1mA	305nC @ 10V	19000pF @ 25V	±30V	-	357W (Tc)	240 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUSi5-Pak?
IXFK44N55Q	IXYS	MOSFET N-CH 550V 44A 0TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,504	MOSFET (Metal Oxide)	550V	44A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	6400pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTH60N10	IXYS	MOSFET N-CH 100V 60A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4V @ 250µA	110nC @ 10V	3200pF @ 25V	±20V	-	300W (Tc)	20 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFE180N10	IXYS	MOSFET N-CH 100V 176A ISOPLUS227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 176A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,272	MOSFET (Metal Oxide)	100V	176A	10V	4V @ 8mA	360nC @ 10V	9100pF @ 25V	±20V	-	500W (Tc)	8 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTR210P10T	IXYS	MOSFET P-CH 100V 158A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 69500pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock3,200	MOSFET (Metal Oxide)	100V	195A (Tc)	10V	4.5V @ 250µA	740nC @ 10V	69500pF @ 25V	±15V	-	595W (Tc)	8 mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXTR120P20T	IXYS	MOSFET P-CH 200V 90A ISOPLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock2,192	MOSFET (Metal Oxide)	200V	90A (Tc)	10V	4.5V @ 250µA	740nC @ 10V	73000pF @ 25V	±15V	-	595W (Tc)	32 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
MKE38RK600DFELB-TRR	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD?.B Package / Case: 9-SMD Module	Package: 9-SMD Module	Stock3,920	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	3.5V @ 3mA	190nC @ 10V	6800pF @ 100V	±20V	-	-	45 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD?.B	9-SMD Module
IXFR50N50	IXYS	MOSFET N-CH 500V 43A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,528	MOSFET (Metal Oxide)	500V	43A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	400W (Tc)	100 mOhm @ 25A, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFL82N60P	IXYS	MOSFET N-CH 600V 55A ISOPLUS 264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 41A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock7,424	MOSFET (Metal Oxide)	600V	55A (Tc)	10V	5V @ 8mA	240nC @ 10V	23000pF @ 25V	±30V	-	625W (Tc)	78 mOhm @ 41A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
IXFL100N50P	IXYS	MOSFET N-CH 500V 70A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock4,384	MOSFET (Metal Oxide)	500V	70A (Tc)	10V	5V @ 8mA	240nC @ 10V	20000pF @ 25V	±30V	-	625W (Tc)	52 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
IXFX44N55Q	IXYS	MOSFET N-CH 550V 44A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	550V	44A (Tc)	10V	4.5V @ 4mA	190nC @ 10V	6400pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
FMD47-06KC5	IXYS	MOSFET N-CH 600V 47A I4-PAC-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	Package: i4-Pac?-5	Stock6,512	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	3.5V @ 3mA	190nC @ 10V	6800pF @ 100V	±20V	-	-	45 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5
FDM47-06KC5	IXYS	MOSFET N-CH 600V 47A I4-PAC-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	Package: i4-Pac?-5	Stock4,768	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	3.5V @ 3mA	190nC @ 10V	6800pF @ 100V	±20V	-	-	45 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC?	i4-Pac?-5
IXFN32N80P	IXYS	MOSFET N-CH 800V 29A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 29A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,288	MOSFET (Metal Oxide)	800V	29A	10V	5V @ 8mA	150nC @ 10V	8820pF @ 25V	±30V	-	625W (Tc)	270 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX50N50	IXYS	MOSFET N-CH 500V 50A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,560	MOSFET (Metal Oxide)	500V	50A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	520W (Tc)	100 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFN200N10P	IXYS	MOSFET N-CH 100V 200A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 680W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,792	MOSFET (Metal Oxide)	100V	200A	10V	5V @ 8mA	235nC @ 10V	7600pF @ 25V	±20V	-	680W (Tc)	7.5 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN102N30P	IXYS	MOSFET N-CH 300V 88A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,496	MOSFET (Metal Oxide)	300V	88A	10V	5V @ 4mA	224nC @ 10V	7500pF @ 25V	±20V	-	600W (Tc)	33 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN36N50	IXYS	MOSFET N-CH 500V 36A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,072	MOSFET (Metal Oxide)	500V	36A	-	4V @ 20mA	-	-	-	-	-	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFR24N100Q3	IXYS	MOSFET N-CH 1000V 18A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock3,648	MOSFET (Metal Oxide)	1000V	18A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	7200pF @ 25V	±30V	-	500W (Tc)	490 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXFR48N60Q3	IXYS	MOSFET N-CH 600V 32A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 154 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock7,600	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	7020pF @ 25V	±30V	-	500W (Tc)	154 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
IXFK24N90Q	IXYS	MOSFET N-CH 900V 24A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,856	MOSFET (Metal Oxide)	900V	24A (Tc)	10V	4.5V @ 4mA	170nC @ 10V	5900pF @ 25V	±20V	-	500W (Tc)	450 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA