Page 74 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN240N15T2
IXYS

MOSFET N-CH 150V 240A SOT227

Package: SOT-227-4, miniBLOC

Stock3,568
IXFN140N25T
IXYS

MOSFET N-CH 250V 120A SOT-227

Package: SOT-227-4, miniBLOC

Stock4,000
IXFX32N100Q3
IXYS

MOSFET N-CH 1000V 32A PLUS247

Package: TO-247-3

Stock106,800
IXFN100N25
IXYS

MOSFET N-CH 250V 100A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,104
IXFN180N07
IXYS

MOSFET N-CH 70V 180A SOT-227B

Package: SOT-227-4, miniBLOC

Stock2,608
MMIX1F210N30P3
IXYS

MOSFET N-CH 300V 108A MMIX

Package: 24-PowerSMD, 21 Leads

Stock7,008
IXFK60N55Q2
IXYS

MOSFET N-CH 550V 60A TO-264

Package: TO-264-3, TO-264AA

Stock5,760
IXFX60N55Q2
IXYS

MOSFET N-CH 550V 60A PLUS247

Package: TO-247-3

Stock7,056
IXFB44N100P
IXYS

MOSFET N-CH 1000V 44A PLUS264

Package: TO-264-3, TO-264AA

Stock3,792
IXFB52N90P
IXYS

MOSFET N-CH TO-264

Package: TO-264-3, TO-264AA

Stock4,304
IXFR90N20Q
IXYS

MOSFET N-CH 200V ISOPLUS247

Package: ISOPLUS247?

Stock7,920
IXTE250N10
IXYS

MOSFET N-CH 100V 250A ISOPLUS227

Package: SOT-227-4, miniBLOC

Stock3,536
IXFN100N20
IXYS

MOSFET N-CH 200V 100A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,288
IXFX26N120P
IXYS

MOSFET N-CH 1200V 26A PLUS247

Package: TO-247-3

Stock5,840
IXKG25N80C
IXYS

MOSFET N-CH 800V 25A ISO264

Package: ISO264?

Stock5,872
IXFN44N50Q
IXYS

MOSFET N-CH 500V 44A SOT-227B

Package: SOT-227-4, miniBLOC

Stock6,592
IXFR24N90Q
IXYS

MOSFET N-CH 900V ISOPLUS247

Package: ISOPLUS247?

Stock3,520
IXFK26N100P
IXYS

MOSFET N-CH 1000V 26A TO-264

Package: TO-264-3, TO-264AA

Stock3,600
IXFK170N10
IXYS

MOSFET N-CH 100V 170A TO-264AA

Package: TO-264-3, TO-264AA

Stock7,360
IXFL38N100P
IXYS

MOSFET N-CH 1000V 29A I5-PAK

Package: ISOPLUSi5-Pak?

Stock7,904

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN240N15T2	IXYS	MOSFET N-CH 150V 240A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 240A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,568	MOSFET (Metal Oxide)	150V	240A	10V	5V @ 8mA	460nC @ 10V	32000pF @ 25V	±20V	-	830W (Tc)	5.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN140N25T	IXYS	MOSFET N-CH 250V 120A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,000	MOSFET (Metal Oxide)	250V	120A	10V	5V @ 4mA	255nC @ 10V	19000pF @ 25V	±20V	-	690W (Tc)	17 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX32N100Q3	IXYS	MOSFET N-CH 1000V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock106,800	MOSFET (Metal Oxide)	1000V	32A (Tc)	10V	6.5V @ 8mA	195nC @ 10V	9940pF @ 25V	±30V	-	1250W (Tc)	320 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFN100N25	IXYS	MOSFET N-CH 250V 100A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,104	MOSFET (Metal Oxide)	250V	100A	10V	4V @ 8mA	300nC @ 10V	9100pF @ 25V	±20V	-	600W (Tc)	27 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN180N07	IXYS	MOSFET N-CH 70V 180A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 180A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,608	MOSFET (Metal Oxide)	70V	180A	10V	4V @ 8mA	480nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	7 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
MMIX1F210N30P3	IXYS	MOSFET N-CH 300V 108A MMIX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 105A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock7,008	MOSFET (Metal Oxide)	300V	108A (Tc)	-	5V @ 8mA	-	16200pF @ 25V	-	-	-	16 mOhm @ 105A, 10V	-	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
IXFK60N55Q2	IXYS	MOSFET N-CH 550V 60A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock5,760	MOSFET (Metal Oxide)	550V	60A (Tc)	10V	4.5V @ 8mA	200nC @ 10V	7300pF @ 25V	±30V	-	735W (Tc)	88 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX60N55Q2	IXYS	MOSFET N-CH 550V 60A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,056	MOSFET (Metal Oxide)	550V	60A (Tc)	10V	4.5V @ 8mA	200nC @ 10V	6900pF @ 25V	±30V	-	735W (Tc)	88 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFB44N100P	IXYS	MOSFET N-CH 1000V 44A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,792	MOSFET (Metal Oxide)	1000V	44A (Tc)	10V	6.5V @ 1mA	305nC @ 10V	19000pF @ 25V	±30V	-	1250W (Tc)	220 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFB52N90P	IXYS	MOSFET N-CH TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,304	MOSFET (Metal Oxide)	900V	52A (Tc)	10V	6.5V @ 1mA	308nC @ 10V	19000pF @ 25V	±30V	-	1250W (Tc)	160 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFR90N20Q	IXYS	MOSFET N-CH 200V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,920	MOSFET (Metal Oxide)	200V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTE250N10	IXYS	MOSFET N-CH 100V 250A ISOPLUS227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 250A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,536	MOSFET (Metal Oxide)	100V	250A	-	-	-	-	-	-	-	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN100N20	IXYS	MOSFET N-CH 200V 100A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,288	MOSFET (Metal Oxide)	200V	100A	10V	4V @ 8mA	380nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	23 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX26N120P	IXYS	MOSFET N-CH 1200V 26A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,840	MOSFET (Metal Oxide)	1200V	26A (Tc)	10V	6.5V @ 1mA	225nC @ 10V	16000pF @ 25V	±30V	-	960W (Tc)	500 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXKG25N80C	IXYS	MOSFET N-CH 800V 25A ISO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO264? Package / Case: ISO264?	Package: ISO264?	Stock5,872	MOSFET (Metal Oxide)	800V	25A (Tc)	10V	4V @ 2mA	166nC @ 10V	-	±20V	-	250W (Tc)	150 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISO264?	ISO264?
IXFN44N50Q	IXYS	MOSFET N-CH 500V 44A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,592	MOSFET (Metal Oxide)	500V	44A	10V	4V @ 4mA	190nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFR24N90Q	IXYS	MOSFET N-CH 900V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock3,520	MOSFET (Metal Oxide)	900V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFK26N100P	IXYS	MOSFET N-CH 1000V 26A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,600	MOSFET (Metal Oxide)	1000V	26A (Tc)	10V	6.5V @ 1mA	197nC @ 10V	11900pF @ 25V	±30V	-	780W (Tc)	390 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK170N10	IXYS	MOSFET N-CH 100V 170A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 515nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,360	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	4V @ 8mA	515nC @ 10V	10300pF @ 25V	±20V	-	560W (Tc)	10 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFL38N100P	IXYS	MOSFET N-CH 1000V 29A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak? Package / Case: ISOPLUSi5-Pak?	Package: ISOPLUSi5-Pak?	Stock7,904	MOSFET (Metal Oxide)	1000V	29A (Tc)	10V	6.5V @ 1mA	350nC @ 10V	24000pF @ 25V	±30V	-	520W (Tc)	230 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
MKE38RK600DFELB	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD?.B Package / Case: 9-SMD Module	Package: 9-SMD Module	Stock3,584	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	3.5V @ 3mA	190nC @ 10V	6800pF @ 100V	±20V	-	-	45 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD?.B	9-SMD Module
IXFX52N60Q2	IXYS	MOSFET N-CH 600V 52A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,856	MOSFET (Metal Oxide)	600V	52A (Tc)	10V	4.5V @ 8mA	198nC @ 10V	6800pF @ 25V	±30V	-	735W (Tc)	115 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK52N60Q2	IXYS	MOSFET N-CH 600V 52A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 115 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,704	MOSFET (Metal Oxide)	600V	52A (Tc)	10V	4.5V @ 8mA	198nC @ 10V	6800pF @ 25V	±30V	-	735W (Tc)	115 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFX26N100P	IXYS	MOSFET N-CH 1000V 26A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,808	MOSFET (Metal Oxide)	1000V	26A (Tc)	10V	6.5V @ 1mA	197nC @ 10V	11900pF @ 25V	±30V	-	780W (Tc)	390 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFN48N50Q	IXYS	MOSFET N-CH 500V 48A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,584	MOSFET (Metal Oxide)	500V	48A	10V	4V @ 4mA	190nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	100 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN64N50PD3	IXYS	MOSFET N-CH 500V 52A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,136	MOSFET (Metal Oxide)	500V	52A	10V	5V @ 8mA	186nC @ 10V	11000pF @ 25V	±30V	-	625W (Tc)	85 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFE73N30Q	IXYS	MOSFET N-CH 300V 66A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 66A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 36.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,256	MOSFET (Metal Oxide)	300V	66A	10V	4V @ 4mA	190nC @ 10V	6400pF @ 25V	±20V	-	400W (Tc)	46 mOhm @ 36.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN44N80P	IXYS	MOSFET N-CH 800V 39A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 39A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,232	MOSFET (Metal Oxide)	800V	39A	10V	5V @ 8mA	200nC @ 10V	12000pF @ 25V	±30V	-	694W (Tc)	190 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC