Page 77 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFN20N120P
IXYS

MOSFET N-CH 1200V 20A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,056
IXFN38N80Q2
IXYS

MOSFET N-CH 800V 38A SOT-227

Package: SOT-227-4, miniBLOC

Stock2,560
MMIX1F230N20T
IXYS

MOSFET N-CH 200V 168A SMPD

Package: 24-PowerSMD, 21 Leads

Stock5,392
MMIX1F180N25T
IXYS

MOSFET N-CH 250V 130A SMPD

Package: 24-PowerSMD, 21 Leads

Stock7,728
MMIX1F160N30T
IXYS

MOSFET N-CH 300V 102A SMPD

Package: 24-PowerSMD, 21 Leads

Stock3,952
IXFE23N100
IXYS

MOSFET N-CH 1000V 21A ISOPLUS227

Package: SOT-227-4, miniBLOC

Stock3,440
IXFL30N120P
IXYS

MOSFET N-CH 1200V 18A I5-PAK

Package: ISOPLUSi5-Pak?

Stock2,256
IXFE44N50QD3
IXYS

MOSFET N-CH 500V 39A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,232
IXFE44N50QD2
IXYS

MOSFET N-CH 500V 39A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,328
IXFB40N110P
IXYS

MOSFET N-CH 1100V 40A PLUS264

Package: TO-264-3, TO-264AA

Stock7,616
MKE38P600LB-TRR
IXYS

MOSFET N-CH 600V 50A SMPD

Package: 9-SMD Module

Stock5,712
IXFB50N80Q2
IXYS

MOSFET N-CH 800V 50A PLUS264

Package: TO-264-3, TO-264AA

Stock2,560
IXFE48N50QD3
IXYS

MOSFET N-CH 500V 41A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,136
IXFE48N50QD2
IXYS

MOSFET N-CH 500V 41A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,000
IXTN21N100
IXYS

MOSFET N-CH 1KV 21A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,600
IXFN32N60
IXYS

MOSFET N-CH 600V 32A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,048
IXFN300N10P
IXYS

MOSFET N-CH 100V 295A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,552
IXFN170N30P
IXYS

MOSFET N-CH 300V 138A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,936
IXFN24N90Q
IXYS

MOSFET N-CH 900V 24A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,648
IXTK8N150L
IXYS

MOSFET N-CH 1500V 8A TO-264

Package: TO-264-3, TO-264AA

Stock2,096

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN20N120P	IXYS	MOSFET N-CH 1200V 20A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,056	MOSFET (Metal Oxide)	1200V	20A	10V	6.5V @ 1mA	193nC @ 10V	11100pF @ 25V	±30V	-	595W (Tc)	570 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN38N80Q2	IXYS	MOSFET N-CH 800V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,560	MOSFET (Metal Oxide)	800V	38A	10V	4.5V @ 8mA	190nC @ 10V	8340pF @ 25V	±30V	-	735W (Tc)	220 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
MMIX1F230N20T	IXYS	MOSFET N-CH 200V 168A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock5,392	MOSFET (Metal Oxide)	200V	168A (Tc)	10V	5V @ 8mA	378nC @ 10V	28000pF @ 25V	±20V	-	600W (Tc)	8.3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SMPD	24-PowerSMD, 21 Leads
MMIX1F180N25T	IXYS	MOSFET N-CH 250V 130A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock7,728	MOSFET (Metal Oxide)	250V	132A (Tc)	10V	5V @ 8mA	364nC @ 10V	23800pF @ 25V	±20V	-	570W (Tc)	13 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SMPD	24-PowerSMD, 21 Leads
MMIX1F160N30T	IXYS	MOSFET N-CH 300V 102A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMPD Package / Case: 24-PowerSMD, 21 Leads	Package: 24-PowerSMD, 21 Leads	Stock3,952	MOSFET (Metal Oxide)	300V	102A (Tc)	10V	5V @ 8mA	335nC @ 10V	2800pF @ 25V	±20V	-	570W (Tc)	20 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SMPD	24-PowerSMD, 21 Leads
IXFE23N100	IXYS	MOSFET N-CH 1000V 21A ISOPLUS227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,440	MOSFET (Metal Oxide)	1000V	21A	10V	5V @ 8mA	250nC @ 10V	7000pF @ 25V	±20V	-	500W (Tc)	430 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFL30N120P	IXYS	MOSFET N-CH 1200V 18A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak? Package / Case: ISOPLUSi5-Pak?	Package: ISOPLUSi5-Pak?	Stock2,256	MOSFET (Metal Oxide)	1200V	18A (Tc)	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	357W (Tc)	380 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
IXFE44N50QD3	IXYS	MOSFET N-CH 500V 39A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 39A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,232	MOSFET (Metal Oxide)	500V	39A	10V	4V @ 4mA	190nC @ 10V	8000pF @ 25V	±20V	-	400W (Tc)	120 mOhm @ 22A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFE44N50QD2	IXYS	MOSFET N-CH 500V 39A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 39A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,328	MOSFET (Metal Oxide)	500V	39A	10V	4V @ 4mA	190nC @ 10V	8000pF @ 25V	±20V	-	400W (Tc)	120 mOhm @ 22A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFB40N110P	IXYS	MOSFET N-CH 1100V 40A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,616	MOSFET (Metal Oxide)	1100V	40A (Tc)	10V	6.5V @ 1mA	310nC @ 10V	19000pF @ 25V	±30V	-	1250W (Tc)	260 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
MKE38P600LB-TRR	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD?.B Package / Case: 9-SMD Module	Package: 9-SMD Module	Stock5,712	MOSFET (Metal Oxide)	600V	50A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	ISOPLUS-SMPD?.B	9-SMD Module
IXFB50N80Q2	IXYS	MOSFET N-CH 800V 50A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,560	MOSFET (Metal Oxide)	800V	50A (Tc)	10V	5.5V @ 8mA	260nC @ 10V	7200pF @ 25V	±30V	-	1135W (Tc)	160 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFE48N50QD3	IXYS	MOSFET N-CH 500V 41A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,136	MOSFET (Metal Oxide)	500V	41A	10V	4V @ 4mA	190nC @ 10V	8000pF @ 25V	±20V	-	400W (Tc)	110 mOhm @ 24A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFE48N50QD2	IXYS	MOSFET N-CH 500V 41A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,000	MOSFET (Metal Oxide)	500V	41A	10V	4V @ 4mA	190nC @ 10V	8000pF @ 25V	±20V	-	400W (Tc)	110 mOhm @ 24A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN21N100	IXYS	MOSFET N-CH 1KV 21A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,600	MOSFET (Metal Oxide)	1000V	21A	10V	4.5V @ 500µA	250nC @ 10V	8400pF @ 25V	±20V	-	520W (Tc)	550 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN32N60	IXYS	MOSFET N-CH 600V 32A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,048	MOSFET (Metal Oxide)	600V	32A	10V	4.5V @ 8mA	325nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	250 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN300N10P	IXYS	MOSFET N-CH 100V 295A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 295A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1070W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,552	MOSFET (Metal Oxide)	100V	295A	10V	5V @ 8mA	279nC @ 10V	23000pF @ 25V	±20V	-	1070W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN170N30P	IXYS	MOSFET N-CH 300V 138A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 138A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,936	MOSFET (Metal Oxide)	300V	138A	10V	4.5V @ 1mA	258nC @ 10V	20000pF @ 25V	±20V	-	890W (Tc)	18 mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN24N90Q	IXYS	MOSFET N-CH 900V 24A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,648	MOSFET (Metal Oxide)	900V	24A	-	-	-	-	-	-	-	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTK8N150L	IXYS	MOSFET N-CH 1500V 8A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 4A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,096	MOSFET (Metal Oxide)	1500V	8A (Tc)	20V	8V @ 250µA	250nC @ 15V	8000pF @ 25V	±30V	-	700W (Tc)	3.6 Ohm @ 4A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFL70N60Q2	IXYS	MOSFET N-CH 600V 37A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 92 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock3,632	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	5.5V @ 8mA	265nC @ 10V	12000pF @ 25V	±30V	-	360W (Tc)	92 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
IXFB30N120P	IXYS	MOSFET N-CH 1200V 30A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,992	MOSFET (Metal Oxide)	1200V	30A (Tc)	10V	6.5V @ 1mA	310nC @ 10V	22500pF @ 25V	±20V	-	1250W (Tc)	350 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS264?	TO-264-3, TO-264AA
IXFL34N100	IXYS	MOSFET N-CH 1000V 30A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock5,504	MOSFET (Metal Oxide)	1000V	30A (Tc)	10V	5V @ 8mA	380nC @ 10V	9200pF @ 25V	±20V	-	550W (Tc)	280 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
IXFN34N80	IXYS	MOSFET N-CH 800V 34A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,528	MOSFET (Metal Oxide)	800V	34A	10V	5V @ 8mA	270nC @ 10V	7500pF @ 25V	±20V	-	600W (Tc)	240 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN23N100	IXYS	MOSFET N-CH 1000V 23A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,424	MOSFET (Metal Oxide)	1000V	23A	10V	5V @ 8mA	-	-	±20V	-	600W (Tc)	-	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFX30N100Q2	IXYS	MOSFET N-CH 1000V 30A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,168	MOSFET (Metal Oxide)	1000V	30A (Tc)	10V	5V @ 8mA	186nC @ 10V	8200pF @ 25V	±30V	-	735W (Tc)	400 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXFK30N100Q2	IXYS	MOSFET N-CH 1000V 30A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,872	MOSFET (Metal Oxide)	1000V	30A (Tc)	10V	5V @ 8mA	186nC @ 10V	8200pF @ 25V	±30V	-	735W (Tc)	400 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFN27N80Q	IXYS	MOSFET N-CH 800V 27A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,568	MOSFET (Metal Oxide)	800V	27A	10V	4.5V @ 4mA	170nC @ 10V	7600pF @ 25V	±20V	-	520W (Tc)	320 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC