Page 84 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXTC230N085T
IXYS

MOSFET N-CH 85V 120A ISOPLUS220

Package: ISOPLUS220?

Stock7,808
IXTC220N075T
IXYS

MOSFET N-CH 75V 115A ISOPLUS220

Package: ISOPLUS220?

Stock2,176
IXTC220N055T
IXYS

MOSFET N-CH 55V 130A ISOPLUS220

Package: ISOPLUS220?

Stock7,248
IXTC200N10T
IXYS

MOSFET N-CH 100V 101A ISOPLUS220

Package: ISOPLUS220?

Stock7,920
IXTC180N10T
IXYS

MOSFET N-CH 100V 90A ISOPLUS220

Package: ISOPLUS220?

Stock3,296
IXTC180N085T
IXYS

MOSFET N-CH 85V 110A ISOPLUS220

Package: ISOPLUS220?

Stock4,848
IXTC180N055T
IXYS

MOSFET N-CH 55V ISOPLUS 220

Package: ISOPLUS220?

Stock4,144
IXTC160N10T
IXYS

MOSFET N-CH 100V 83A ISOPLUS220

Package: ISOPLUS220?

Stock3,344
IXTC160N085T
IXYS

MOSFET N-CH 85V 110A ISOPLUS 220

Package: ISOPLUS220?

Stock5,344
IXTA98N075T
IXYS

MOSFET N-CH 75V 98A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
IXTA90N055T
IXYS

MOSFET N-CH 55V 90A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,528
IXTA88N085T7
IXYS

MOSFET N-CH 85V 88A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,488
IXTA88N085T
IXYS

MOSFET N-CH 85V 88A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,856
IXTA80N10T7
IXYS

MOSFET N-CH 100V 80A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock3,312
IXTA76N075T
IXYS

MOSFET N-CH 75V 76A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,232
IXTA70N085T
IXYS

MOSFET N-CH 85V 70A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103,464
IXTA240N055T7
IXYS

MOSFET N-CH 55V 240A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,680
IXTA240N055T
IXYS

MOSFET N-CH 55V 240A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,416
IXTA220N075T7
IXYS

MOSFET N-CH 75V 220A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock2,100
IXTA220N075T
IXYS

MOSFET N-CH 75V 220A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,624

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTC230N085T	IXYS	MOSFET N-CH 85V 120A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,808	MOSFET (Metal Oxide)	85V	120A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC220N075T	IXYS	MOSFET N-CH 75V 115A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock2,176	MOSFET (Metal Oxide)	75V	115A (Tc)	10V	4V @ 250µA	165nC @ 10V	7700pF @ 25V	±20V	-	150W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC220N055T	IXYS	MOSFET N-CH 55V 130A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,248	MOSFET (Metal Oxide)	55V	130A (Tc)	10V	4V @ 250µA	158nC @ 10V	7200pF @ 25V	±20V	-	150W (Tc)	4.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC200N10T	IXYS	MOSFET N-CH 100V 101A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,920	MOSFET (Metal Oxide)	100V	101A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9400pF @ 25V	±30V	-	160W (Tc)	6.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC180N10T	IXYS	MOSFET N-CH 100V 90A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,296	MOSFET (Metal Oxide)	100V	90A (Tc)	-	-	-	-	-	-	150W (Tc)	-	-	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC180N085T	IXYS	MOSFET N-CH 85V 110A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock4,848	MOSFET (Metal Oxide)	85V	110A (Tc)	10V	4V @ 250µA	170nC @ 10V	8800pF @ 25V	±20V	-	150W (Tc)	6.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC180N055T	IXYS	MOSFET N-CH 55V ISOPLUS 220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock4,144	MOSFET (Metal Oxide)	55V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC160N10T	IXYS	MOSFET N-CH 100V 83A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,344	MOSFET (Metal Oxide)	100V	83A (Tc)	10V	4.5V @ 250µA	132nC @ 10V	6600pF @ 25V	±20V	-	140W (Tc)	7.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTC160N085T	IXYS	MOSFET N-CH 85V 110A ISOPLUS 220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,344	MOSFET (Metal Oxide)	85V	110A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTA98N075T	IXYS	MOSFET N-CH 75V 98A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	75V	98A (Tc)	10V	4V @ 100µA	-	-	±20V	-	230W (Tc)	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA90N055T	IXYS	MOSFET N-CH 55V 90A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,528	MOSFET (Metal Oxide)	55V	90A (Tc)	10V	4V @ 50µA	61nC @ 10V	2500pF @ 25V	±20V	-	176W (Tc)	8.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA88N085T7	IXYS	MOSFET N-CH 85V 88A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,488	MOSFET (Metal Oxide)	85V	88A (Tc)	10V	4V @ 100µA	69nC @ 10V	3140pF @ 25V	±20V	-	230W (Tc)	11 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA88N085T	IXYS	MOSFET N-CH 85V 88A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,856	MOSFET (Metal Oxide)	85V	88A (Tc)	10V	4V @ 100µA	69nC @ 10V	3140pF @ 25V	±20V	-	230W (Tc)	11 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA80N10T7	IXYS	MOSFET N-CH 100V 80A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,312	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4.5V @ 100µA	60nC @ 10V	3040pF @ 25V	±30V	-	230W (Tc)	14 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA76N075T	IXYS	MOSFET N-CH 75V 76A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,232	MOSFET (Metal Oxide)	75V	76A (Tc)	10V	4V @ 50µA	57nC @ 10V	2580pF @ 25V	±20V	-	176W (Tc)	12 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA70N085T	IXYS	MOSFET N-CH 85V 70A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103,464	MOSFET (Metal Oxide)	85V	70A (Tc)	10V	4V @ 50µA	59nC @ 10V	2570pF @ 25V	±20V	-	176W (Tc)	13.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA240N055T7	IXYS	MOSFET N-CH 55V 240A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,680	MOSFET (Metal Oxide)	55V	240A (Tc)	10V	4V @ 250µA	170nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	3.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA240N055T	IXYS	MOSFET N-CH 55V 240A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,416	MOSFET (Metal Oxide)	55V	240A (Tc)	10V	4V @ 250µA	170nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	3.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA220N075T7	IXYS	MOSFET N-CH 75V 220A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock2,100	MOSFET (Metal Oxide)	75V	220A (Tc)	10V	4V @ 250µA	165nC @ 10V	7700pF @ 25V	±20V	-	480W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA220N075T	IXYS	MOSFET N-CH 75V 220A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,624	MOSFET (Metal Oxide)	75V	220A (Tc)	10V	4V @ 250µA	165nC @ 10V	7700pF @ 25V	±20V	-	480W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA220N055T7	IXYS	MOSFET N-CH 55V 220A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,816	MOSFET (Metal Oxide)	55V	220A (Tc)	10V	4V @ 250µA	158nC @ 10V	7200pF @ 25V	±20V	-	430W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA220N055T	IXYS	MOSFET N-CH 55V 220A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,080	MOSFET (Metal Oxide)	55V	220A (Tc)	10V	4V @ 250µA	158nC @ 10V	7200pF @ 25V	±20V	-	430W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA200N085T7	IXYS	MOSFET N-CH 85V 200A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock7,040	MOSFET (Metal Oxide)	85V	200A (Tc)	10V	4V @ 250µA	152nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA200N085T	IXYS	MOSFET N-CH 85V 200A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,432	MOSFET (Metal Oxide)	85V	200A (Tc)	10V	4V @ 250µA	152nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA200N075T7	IXYS	MOSFET N-CH 75V 200A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock3,088	MOSFET (Metal Oxide)	75V	200A (Tc)	10V	4V @ 250µA	160nC @ 10V	6800pF @ 25V	±20V	-	430W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA200N075T	IXYS	MOSFET N-CH 75V 200A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,824	MOSFET (Metal Oxide)	75V	200A (Tc)	10V	4V @ 250µA	160nC @ 10V	6800pF @ 25V	±20V	-	430W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA182N055T7	IXYS	MOSFET N-CH 55V 182A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock7,552	MOSFET (Metal Oxide)	55V	182A (Tc)	10V	4V @ 250µA	114nC @ 10V	4850pF @ 25V	±20V	-	360W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7 (IXTA..7)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA182N055T	IXYS	MOSFET N-CH 55V 182A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,608	MOSFET (Metal Oxide)	55V	182A (Tc)	10V	4V @ 250µA	114nC @ 10V	4850pF @ 25V	±20V	-	360W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB