Page 87 - IXYS Products - Transistors - FETs, MOSFETs - Single

IXFH160N15T
IXYS

MOSFET N-CH 150V 160A TO-247

Package: TO-247-3

Stock423,696
IXUC160N075
IXYS

MOSFET N-CH 75V 160A ISOPLUS220

Package: ISOPLUS220?

Stock2,496
IXTV110N25TS
IXYS

MOSFET N-CH 250V 110A PLUS220SMD

Package: PLUS-220SMD

Stock2,896
IXTV102N20T
IXYS

MOSFET N-CH 200V 102A PLUS220

Package: TO-220-3, Short Tab

Stock2,080
IXTC110N25T
IXYS

MOSFET N-CH 250V 50A ISOPLUS220

Package: ISOPLUS220?

Stock5,984
IXKP10N60C5M
IXYS

MOSFET N-CH 600V 5.4A TO220ABFP

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,752
IXFV15N100PS
IXYS

MOSFET N-CH 1000V 15A PLUS220SMD

Package: PLUS-220SMD

Stock6,720
IXFV15N100P
IXYS

MOSFET N-CH 1000V 15A PLUS220

Package: TO-220-3, Short Tab

Stock3,232
IXFV12N120PS
IXYS

MOSFET N-CH 1200V 12A PLUS220SMD

Package: PLUS-220SMD

Stock6,768
IXFV12N120P
IXYS

MOSFET N-CH 1200V 12A PLUS220

Package: TO-220-3, Short Tab

Stock5,248
IXUN350N10
IXYS

MOSFET N-CH 100V 350A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,680
VMO80-05P1
IXYS

MOSFET N-CH ECO-PAC2

Package: ECO-PAC2

Stock2,176
VMO40-05P1
IXYS

MOSFET N-CH ECO-PAC2

Package: ECO-PAC2

Stock3,008
VMO150-01P1
IXYS

MOSFET N-CH 100V 165A ECO-PAC2

Package: ECO-PAC2

Stock4,944
IXUN280N10
IXYS

MOSFET N-CH 100V 280A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,168
IXTY64N055T
IXYS

MOSFET N-CH 55V 64A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock631,824
IXTY5N50P
IXYS

MOSFET N-CH 500V 4.8A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,928
IXTY55N075T
IXYS

MOSFET N-CH 75V 55A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,344
IXTY50N085T
IXYS

MOSFET N-CH 85V 50A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,224
IXTV280N055TS
IXYS

MOSFET N-CH 55V 280A PLUS220SMD

Package: PLUS-220SMD

Stock4,688

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFH160N15T	IXYS	MOSFET N-CH 150V 160A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock423,696	MOSFET (Metal Oxide)	150V	160A (Tc)	10V	5V @ 1mA	160nC @ 10V	8800pF @ 25V	±30V	-	830W (Tc)	9.6 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXUC160N075	IXYS	MOSFET N-CH 75V 160A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock2,496	MOSFET (Metal Oxide)	75V	160A (Tc)	10V	4V @ 2mA	250nC @ 10V	-	±20V	-	300W (Tc)	6.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXTV110N25TS	IXYS	MOSFET N-CH 250V 110A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock2,896	MOSFET (Metal Oxide)	250V	110A (Tc)	10V	4.5V @ 1mA	157nC @ 10V	9400pF @ 25V	±20V	-	694W (Tc)	24 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXTV102N20T	IXYS	MOSFET N-CH 200V 102A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock2,080	MOSFET (Metal Oxide)	200V	102A (Tc)	10V	4.5V @ 1mA	114nC @ 10V	6800pF @ 25V	±30V	-	750W (Tc)	23 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXTC110N25T	IXYS	MOSFET N-CH 250V 50A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,984	MOSFET (Metal Oxide)	250V	50A (Tc)	10V	4.5V @ 1mA	157nC @ 10V	9400pF @ 25V	±20V	-	180W (Tc)	27 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IXKP10N60C5M	IXYS	MOSFET N-CH 600V 5.4A TO220ABFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ABFP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,752	MOSFET (Metal Oxide)	600V	5.4A (Tc)	10V	3.5V @ 340µA	22nC @ 10V	790pF @ 100V	±20V	Super Junction	-	385 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220ABFP	TO-220-3 Full Pack, Isolated Tab
IXFV15N100PS	IXYS	MOSFET N-CH 1000V 15A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock6,720	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5140pF @ 25V	±30V	-	543W (Tc)	760 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXFV15N100P	IXYS	MOSFET N-CH 1000V 15A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock3,232	MOSFET (Metal Oxide)	1000V	15A (Tc)	10V	6.5V @ 1mA	97nC @ 10V	5140pF @ 25V	±30V	-	543W (Tc)	760 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXFV12N120PS	IXYS	MOSFET N-CH 1200V 12A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock6,768	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	6.5V @ 1mA	103nC @ 10V	5400pF @ 25V	±30V	-	543W (Tc)	1.35 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXFV12N120P	IXYS	MOSFET N-CH 1200V 12A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock5,248	MOSFET (Metal Oxide)	1200V	12A (Tc)	10V	6.5V @ 1mA	103nC @ 10V	5400pF @ 25V	±30V	-	543W (Tc)	1.35 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXUN350N10	IXYS	MOSFET N-CH 100V 350A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 350A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 175A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,680	MOSFET (Metal Oxide)	100V	350A	10V	4V @ 3mA	640nC @ 10V	27000pF @ 25V	±20V	-	830W (Tc)	2.5 mOhm @ 175A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
VMO80-05P1	IXYS	MOSFET N-CH ECO-PAC2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ECO-PAC2 Package / Case: ECO-PAC2	Package: ECO-PAC2	Stock2,176	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Chassis Mount	ECO-PAC2	ECO-PAC2
VMO40-05P1	IXYS	MOSFET N-CH ECO-PAC2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ECO-PAC2 Package / Case: ECO-PAC2	Package: ECO-PAC2	Stock3,008	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Chassis Mount	ECO-PAC2	ECO-PAC2
VMO150-01P1	IXYS	MOSFET N-CH 100V 165A ECO-PAC2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 165A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ECO-PAC2 Package / Case: ECO-PAC2	Package: ECO-PAC2	Stock4,944	MOSFET (Metal Oxide)	100V	165A	10V	4V @ 8mA	400nC @ 10V	9400pF @ 25V	±20V	-	400W (Tc)	8 mOhm @ 90A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC2	ECO-PAC2
IXUN280N10	IXYS	MOSFET N-CH 100V 280A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 280A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,168	MOSFET (Metal Oxide)	100V	280A	10V	4V @ 4mA	440nC @ 10V	18000pF @ 25V	±20V	-	770W (Tc)	5 mOhm @ 140A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTY64N055T	IXYS	MOSFET N-CH 55V 64A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock631,824	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 25µA	37nC @ 10V	1420pF @ 25V	±20V	-	130W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY5N50P	IXYS	MOSFET N-CH 500V 4.8A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	500V	4.8A (Tc)	10V	5.5V @ 50µA	12.6nC @ 10V	620pF @ 25V	±30V	-	89W (Tc)	1.4 Ohm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY55N075T	IXYS	MOSFET N-CH 75V 55A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,344	MOSFET (Metal Oxide)	75V	55A (Tc)	10V	4V @ 25µA	33nC @ 10V	1400pF @ 25V	±20V	-	130W (Tc)	19.5 mOhm @ 27.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY50N085T	IXYS	MOSFET N-CH 85V 50A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,224	MOSFET (Metal Oxide)	85V	50A (Tc)	10V	4V @ 25µA	34nC @ 10V	1460pF @ 25V	±20V	-	130W (Tc)	23 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTV280N055TS	IXYS	MOSFET N-CH 55V 280A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock4,688	MOSFET (Metal Oxide)	55V	280A (Tc)	10V	4V @ 250µA	200nC @ 10V	9800pF @ 25V	±20V	-	550W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXTV280N055T	IXYS	MOSFET N-CH 55V 280A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock5,312	MOSFET (Metal Oxide)	55V	280A (Tc)	10V	4V @ 250µA	200nC @ 10V	9800pF @ 25V	±20V	-	550W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXTV250N075TS	IXYS	MOSFET N-CH 75V 250A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock5,248	MOSFET (Metal Oxide)	75V	250A (Tc)	10V	4V @ 250µA	200nC @ 10V	9900pF @ 25V	±20V	-	550W (Tc)	4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXTV250N075T	IXYS	MOSFET N-CH 75V 250A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock6,432	MOSFET (Metal Oxide)	75V	250A (Tc)	10V	4V @ 250µA	200nC @ 10V	9900pF @ 25V	±20V	-	550W (Tc)	4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXTV230N085TS	IXYS	MOSFET N-CH 85V 230A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock7,536	MOSFET (Metal Oxide)	85V	230A (Tc)	10V	4V @ 250µA	187nC @ 10V	9900pF @ 25V	±20V	-	550W (Tc)	4.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXTV230N085T	IXYS	MOSFET N-CH 85V 230A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock4,112	MOSFET (Metal Oxide)	85V	230A (Tc)	10V	4V @ 250µA	187nC @ 10V	9900pF @ 25V	±20V	-	550W (Tc)	4.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXTV200N10TS	IXYS	MOSFET N-CH 100V 200A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock3,776	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9400pF @ 25V	±30V	-	550W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IXTV200N10T	IXYS	MOSFET N-CH 100V 200A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	Package: TO-220-3, Short Tab	Stock7,824	MOSFET (Metal Oxide)	100V	200A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9400pF @ 25V	±30V	-	550W (Tc)	5.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS220	TO-220-3, Short Tab
IXTU44N10T	IXYS	MOSFET N-CH 100V 44A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,176	MOSFET (Metal Oxide)	100V	44A (Tc)	-	4.5V @ 25µA	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA