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Microsemi Corporation |
DIODE SCHOTTKY 100V 1A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 380mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 70pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-213AB, MELF (Glass) |
Stock5,488 |
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100V | 1A | 380mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 1A DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 380mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: 70pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-213AB, MELF (Glass) |
Stock4,896 |
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100V | 1A | 380mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 200MA DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-213AA |
Stock3,328 |
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40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 200MA DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-213AA |
Stock6,704 |
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40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 200MA DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 40V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA |
Stock7,920 |
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40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 40V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 200MA DO213
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-213AA |
Stock3,152 |
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40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 500MA D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock3,632 |
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400V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 500MA D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock5,600 |
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400V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 500MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock2,576 |
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400V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 500MA D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock3,872 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 500MA D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock7,264 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 500MA D5D
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock5,792 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 500MA D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock2,800 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 500MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock5,040 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 500MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock5,360 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 300MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 300mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 16-CFlatPack
- Supplier Device Package: 16-Flatpack
- Operating Temperature - Junction: -
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Package: 16-CFlatPack |
Stock2,544 |
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75V | 300mA | 1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | - | - | Surface Mount | 16-CFlatPack | 16-Flatpack | - |
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Microsemi Corporation |
DIODE GEN PURP 60V 300MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 300mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: 14-CDIP (0.300", 7.62mm)
- Supplier Device Package: 14-CDIP
- Operating Temperature - Junction: -
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Package: 14-CDIP (0.300", 7.62mm) |
Stock4,800 |
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60V | 300mA | 1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | - | - | Through Hole | 14-CDIP (0.300", 7.62mm) | 14-CDIP | - |
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Microsemi Corporation |
DIODE GEN PURP 600V 400MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA |
Stock6,192 |
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600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock6,224 |
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600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock6,208 |
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600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock3,856 |
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400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock5,712 |
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400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA |
Stock2,640 |
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225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock6,112 |
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225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AH, DO-35, Axial |
Stock6,864 |
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225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 54A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock5,216 |
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45V | 54A | 510mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | 3000pF @ 5V, 1MHz | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 54A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-203AB, DO-5, Stud |
Stock6,640 |
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45V | 54A | 680mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | 3000pF @ 5V, 1MHz | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 54A DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock7,264 |
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45V | 54A | 680mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | 3000pF @ 5V, 1MHz | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 175°C |