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Microsemi Corporation |
DIODE GEN PURP 1KV 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock5,040 |
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1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: A, Axial |
Stock2,000 |
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1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 900V 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 900V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock2,784 |
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900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 900V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 900V 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 900V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock6,448 |
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900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 900V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 900V 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 900V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock6,576 |
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900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 900V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 900V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 900V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: A, Axial |
Stock2,960 |
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900V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 900V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock6,432 |
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800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock3,536 |
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800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock4,864 |
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800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 800V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A-PAK
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: A, Axial |
Stock3,536 |
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800V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 800V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 660V 2A D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 660V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 660V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock6,128 |
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660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock6,608 |
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600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock3,216 |
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600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock6,096 |
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600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock5,712 |
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400V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock4,240 |
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400V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock3,696 |
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400V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock2,100 |
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200V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock4,352 |
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200V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1.2A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock7,744 |
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200V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: G, Axial
- Supplier Device Package: G, Axial
- Operating Temperature - Junction: -65°C ~ 155°C
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Package: G, Axial |
Stock4,048 |
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150V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | G, Axial | G, Axial | -65°C ~ 155°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A-PAK
- Operating Temperature - Junction: -65°C ~ 155°C
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Package: A, Axial |
Stock3,152 |
|
150V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 3A B-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock4,192 |
|
1000V | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 3A B-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock4,416 |
|
600V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 3A B-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock3,280 |
|
200V | 3A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: B, Axial |
Stock3,888 |
|
100V | 3A | 1.5V @ 9A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 100V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock7,744 |
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1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock5,312 |
|
1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |