Page 3 - Microsemi Corporation Products - Transistors - Bipolar (BJT) - RF

SD1444
Microsemi Corporation

TRANS RF BIPO 5W 400MA TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock5,168
SD1127
Microsemi Corporation

TRANSISTOR BIPO TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock3,968
MS1649
Microsemi Corporation

TRANS RF BIPO 7.8W 470MHZ TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock3,456
MS1409
Microsemi Corporation

TRANS RF BIPO 7W 1A TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock3,520
2N5179
Microsemi Corporation

TRANS RF NPN 12V 50MA TO72

Package: TO-206AF, TO-72-4 Metal Can

Stock17,928
MRF586G
Microsemi Corporation

TRANS BIPO NPN TO-39

Package: TO-205AD, TO-39-3 Metal Can

Stock4,208
SRF4427
Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,672
MRF5812R2
Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock266,268
MSC80205
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
MSC80806
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
MSC1175MA
Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M218

Package: -

Request a Quote
2224-6P
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
SD1143-01
Microsemi Corporation

RF TRANS NPN 18V 175MHZ M113

Package: -

Request a Quote
SD1013-20H
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
SD1372-01H
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
SD1372-06H
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
58048
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
MRFC545
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
MRFC544
Microsemi Corporation

RF POWER TRANSISTOR

Package: -

Request a Quote
82092H
Microsemi Corporation

TRANSISTOR

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SD1444	Microsemi Corporation	TRANS RF BIPO 5W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock5,168	16V	450MHz ~ 512MHz	-	8dB	5W	20 @ 50mA, 5V	400mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1127	Microsemi Corporation	TRANSISTOR BIPO TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 640mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock3,968	18V	175MHz	-	12dB	8W	10 @ 50mA, 5V	640mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MS1649	Microsemi Corporation	TRANS RF BIPO 7.8W 470MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 7.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock3,456	16V	470MHz	-	9.5dB	7.8W	20 @ 100mA, 5V	1A	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MS1409	Microsemi Corporation	TRANS RF BIPO 7W 1A TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock3,520	40V	175MHz	-	10dB	7W	20 @ 100mA, 5V	1A	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N5179	Microsemi Corporation	TRANS RF NPN 12V 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 20dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock17,928	12V	200MHz	4.5dB @ 200MHz	20dB	300mW	25 @ 3mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MRF586G	Microsemi Corporation	TRANS BIPO NPN TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock4,208	17V	3GHz	-	13.5dB	1W	40 @ 50mA, 5V	200mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SRF4427	Microsemi Corporation	TRANS RF BIPO 1.5W 400MA 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): - Gain: 17dB ~ 18dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,672	18V	1.3GHz	-	17dB ~ 18dB	1.5W	20 @ 150mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF5812R2	Microsemi Corporation	RF TRANS NPN 18V 200MA 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB @ 500MHz Gain: 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock266,268	18V	5GHz	2dB @ 500MHz	15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MSC80205	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSC80806	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSC1175MA	Microsemi Corporation	RF TRANS NPN 65V 1.15GHZ M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Package: -	Request a Quote	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C	Chassis Mount	M218	M218
2224-6P	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1143-01	Microsemi Corporation	RF TRANS NPN 18V 175MHZ M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 20W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Package: -	Request a Quote	18V	175MHz	-	10dB	20W	5 @ 250mA, 5V	2A	200°C	Chassis Mount	M113	M113
SD1013-20H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1372-01H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1372-06H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
58048	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRFC545	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRFC544	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
82092H	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1019-02	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
90025HS	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1853-02H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1536-01	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD8266-01H	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2731-200P	Microsemi Corporation	RF TRANS 3.1GHZ MODULE Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8.7dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Request a Quote	-	2.7GHz ~ 3.1GHz	-	8.7dB	-	-	-	-	Chassis Mount	Module	Module
MS1076C	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS1076A	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-