Page 6 - Microsemi Corporation Products - Transistors - Bipolar (BJT) - RF

TAN250A
Microsemi Corporation

TRANS RF BIPO 60V 30A 55AW1

Package: 55AW

Stock4,208
1214-32L
Microsemi Corporation

TRANS RF BIPO 125W 5A 55AW1

Package: 55AW-1

Stock6,304
DME500
Microsemi Corporation

TRANS RF BIPO 1700W 40A 55KT1

Package: 55KT

Stock5,776
MS2552
Microsemi Corporation

TRANS RF BIPO 880W 24A M112

Package: 2NLFL

Stock6,320
DME375A
Microsemi Corporation

TRANS RF BIPO 875W 30A 55AW1

Package: 55AW

Stock3,776
MS2207
Microsemi Corporation

TRANS RF BIPO 24A 65V M216

Package: M216

Stock6,352
MSC1350M
Microsemi Corporation

TRANS RF BIPO 720W 19.8A M218

Package: M218

Stock6,816
MS2554
Microsemi Corporation

TRANS RF BIPO 600W 17.8A SO42

Package: M218

Stock4,688
UTV080
Microsemi Corporation

TRANS RF BIPO 65W 2.5A 55JV2

Package: 55JV

Stock7,824
1214-30
Microsemi Corporation

TRANS RF BIPO 88W 4A 55AW1

Package: 55AW

Stock4,832
1517-20M
Microsemi Corporation

TRANS RF BIPO 175W 3A 55LV1

Package: 55LV-1

Stock3,232
2224-6L
Microsemi Corporation

TRANS RF BIPO 22W 1.25A 55LV1

Package: 55LV

Stock4,496
UMIL80
Microsemi Corporation

TRANS RF BIPO 220W 12A 55HU-2

Package: 55HV

Stock6,672
MS2210
Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Package: M216

Stock7,104
MDS60L
Microsemi Corporation

TRANS RF BIPO 120W 4A 55AW1

Package: 55AW

Stock3,808
JTDB75
Microsemi Corporation

TRANS RF BIPO 220W 8A 55AW1

Package: 55AW

Stock5,760
2731-20
Microsemi Corporation

TRANS RF BIPO 70W 1.85 55KCR-1

Package: 55KCR-1

Stock2,896
MS2422
Microsemi Corporation

TRANS RF BIPO 875W 22A M138

Package: M138

Stock5,552
MS2441
Microsemi Corporation

TRANS RF BIPO 1458W 22A M112

Package: M112

Stock4,896
MSC1175M
Microsemi Corporation

TRANS RF BIPO 400W 12A M218

Package: M218

Stock2,992

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TAN250A	Microsemi Corporation	TRANS RF BIPO 60V 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.2db ~ 7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock4,208	60V	960MHz ~ 1.215GHz	-	6.2db ~ 7dB	575W	10 @ 1A, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
1214-32L	Microsemi Corporation	TRANS RF BIPO 125W 5A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB ~ 8.9dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	Package: 55AW-1	Stock6,304	50V	1.2GHz ~ 1.4GHz	-	7.8dB ~ 8.9dB	125W	20 @ 1A, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
DME500	Microsemi Corporation	TRANS RF BIPO 1700W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6dB ~ 6.5dB Power - Max: 1700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock5,776	55V	1.025GHz ~ 1.15GHz	-	6dB ~ 6.5dB	1700W	10 @ 500mA, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
MS2552	Microsemi Corporation	TRANS RF BIPO 880W 24A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: 2NLFL Supplier Device Package: 2NLFL	Package: 2NLFL	Stock6,320	65V	1.025GHz ~ 1.15GHz	-	6.7dB	880W	15 @ 1A, 5V	24A	250°C (TJ)	Chassis Mount	2NLFL	2NLFL
DME375A	Microsemi Corporation	TRANS RF BIPO 875W 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock3,776	55V	1.025GHz ~ 1.15GHz	-	6.5dB	875W	10 @ 300mA, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2207	Microsemi Corporation	TRANS RF BIPO 24A 65V M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	Package: M216	Stock6,352	65V	1.09GHz	-	8dB	880W	10 @ 5A, 5V	24A	250°C (TJ)	Chassis Mount	M216	M216
MSC1350M	Microsemi Corporation	TRANS RF BIPO 720W 19.8A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 7.1dB Power - Max: 720W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 19.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Package: M218	Stock6,816	65V	1.025GHz ~ 1.15GHz	-	7dB ~ 7.1dB	720W	15 @ 1A, 5V	19.8A	200°C (TJ)	Chassis Mount	M218	M218
MS2554	Microsemi Corporation	TRANS RF BIPO 600W 17.8A SO42 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Package: M218	Stock4,688	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C (TJ)	Chassis Mount	M218	M218
UTV080	Microsemi Corporation	TRANS RF BIPO 65W 2.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Channel, DIN Rail Mount Package / Case: 55JV Supplier Device Package: 55JV	Package: 55JV	Stock7,824	28V	470MHz ~ 860MHz	-	9dB ~ 10dB	65W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Channel, DIN Rail Mount	55JV	55JV
1214-30	Microsemi Corporation	TRANS RF BIPO 88W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock4,832	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
1517-20M	Microsemi Corporation	TRANS RF BIPO 175W 3A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.48GHz ~ 1.65GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB ~ 9.3dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55LV-1 Supplier Device Package: 55LV-1	Package: 55LV-1	Stock3,232	65V	1.48GHz ~ 1.65GHz	-	7.6dB ~ 9.3dB	175W	20 @ 500mA, 5V	3A	-	Chassis Mount	55LV-1	55LV-1
2224-6L	Microsemi Corporation	TRANS RF BIPO 22W 1.25A 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 22W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	Package: 55LV	Stock4,496	40V	2.2GHz ~ 2.4GHz	-	7dB	22W	20 @ 1A, 5V	1.25A	200°C (TJ)	Chassis Mount	55LV	55LV
UMIL80	Microsemi Corporation	TRANS RF BIPO 220W 12A 55HU-2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 200MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	Package: 55HV	Stock6,672	31V	200MHz ~ 500MHz	-	9dB ~ 9.5dB	220W	10 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55HV	55HV
MS2210	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	Package: M216	Stock7,104	65V	960MHz ~ 1.215GHz	-	7dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
MDS60L	Microsemi Corporation	TRANS RF BIPO 120W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 120W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock3,808	65V	1.03GHz ~ 1.09GHz	-	10dB	120W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
JTDB75	Microsemi Corporation	TRANS RF BIPO 220W 8A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.2dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock5,760	55V	960MHz ~ 1.215GHz	-	7dB ~ 8.2dB	220W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
2731-20	Microsemi Corporation	TRANS RF BIPO 70W 1.85 55KCR-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.85A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KCR-1 Supplier Device Package: 55KCR-1	Package: 55KCR-1	Stock2,896	65V	2.7GHz ~ 3.1GHz	-	8.2dB	70W	-	1.85A	200°C (TJ)	Chassis Mount	55KCR-1	55KCR-1
MS2422	Microsemi Corporation	TRANS RF BIPO 875W 22A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	Package: M138	Stock5,552	65V	960MHz ~ 1.215GHz	-	6.3dB	875W	10 @ 1A, 5V	22A	200°C (TJ)	Chassis Mount	M138	M138
MS2441	Microsemi Corporation	TRANS RF BIPO 1458W 22A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	Package: M112	Stock4,896	65V	1.025GHz ~ 1.15GHz	-	6.5dB	1458W	5 @ 250mA, 5V	22A	200°C (TJ)	Chassis Mount	M112	M112
MSC1175M	Microsemi Corporation	TRANS RF BIPO 400W 12A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Package: M218	Stock2,992	65V	1.025GHz ~ 1.15GHz	-	8dB	400W	15 @ 1A, 5V	12A	250°C (TJ)	Chassis Mount	M218	M218
MS2209	Microsemi Corporation	TRANS RF BIPO 220W 7A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 225MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Package: M218	Stock5,776	65V	225MHz	-	8.4dB	220W	20 @ 2A, 5V	7A	200°C (TJ)	Chassis Mount	M218	M218
TPR400	Microsemi Corporation	TRANS RF BIPO 875W 30A 55CX1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7.27dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CX Supplier Device Package: 55CX	Package: 55CX	Stock5,552	55V	1.03GHz ~ 1.09GHz	-	7.27dB	875W	10 @ 2.5A, 5V	30A	200°C (TJ)	Chassis Mount	55CX	55CX
MPA201	Microsemi Corporation	TRANS RF BIPO 6W 300MA 55AU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AU Supplier Device Package: 55AU	Package: 55AU	Stock6,480	22V	2GHz	-	13dB	6W	20 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	55AU	55AU
TAN150	Microsemi Corporation	TRANS RF BIPO 583W 15A 55AT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AT Supplier Device Package: 55AT	Package: 55AT	Stock3,248	55V	960MHz ~ 1.215GHz	-	7dB	583W	10 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55AT	55AT
MDS140L	Microsemi Corporation	TRANS RF BIPO 500W 12A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock4,064	70V	1.03GHz ~ 1.09GHz	-	9.5dB	500W	20 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55AW	55AW
SD1536-08	Microsemi Corporation	TRANS RF BIPO 292W 10A M105 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 292W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	Package: M105	Stock3,792	65V	1.025GHz ~ 1.15GHz	-	8.4dB	292W	5 @ 100mA, 5V	10A	200°C (TJ)	Chassis Mount	M105	M105
S200-50	Microsemi Corporation	TRANS RF BIPO 110V 30A 55HX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 110V Frequency - Transition: 1.5MHz ~ 30MHz Noise Figure (dB Typ @ f): - Gain: 12dB ~ 14.5dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HX Supplier Device Package: 55HX	Package: 55HX	Stock3,280	110V	1.5MHz ~ 30MHz	-	12dB ~ 14.5dB	320W	10 @ 1A, 5V	30A	150°C (TJ)	Chassis Mount	55HX	55HX
MDS150	Microsemi Corporation	TRANS RF BIPO 350W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock3,888	60V	1.03GHz ~ 1.09GHz	-	10dB	350W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW