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Microsemi Corporation |
MOSFET 4N-CH 600V 20A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock6,176 |
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Standard | 600V | 20A | 276 mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 5316pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 4N-CH 500V 25A SP1
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock2,976 |
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Standard | 500V | 25A | 180 mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | 5448pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 39A SP1
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock3,840 |
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Super Junction | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 700pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 39A SP1
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock3,856 |
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Logic Level Gate | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 4N-CH 800V 15A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
- Power - Max: 156W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,080 |
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Standard | 800V | 15A | 290 mOhm @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 105A SP3F
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 105A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V
- Power - Max: 500W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock3,424 |
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Standard | 1200V (1.2kV) | 105A | 25 mOhm @ 80A, 20V | 2.2V @ 4mA (Typ) | 197nC @ 20V | 3800pF @ 1000V | 500W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 100V 495A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 495A
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock4,144 |
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Standard | 100V | 495A | 2.5 mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | 40000pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 372A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 372A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,456 |
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Standard | 200V | 372A | 5 mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 3N-CH 600V 49A SP1
- FET Type: 3 N Channel (Phase Leg + Boost Chopper)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock3,488 |
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Standard | 600V | 49A | 45 mOhm @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 250A D3
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 250A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V
- Power - Max: 1100W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
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Package: D-3 Module |
Stock6,352 |
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Standard | 1200V (1.2kV) | 250A | 10 mOhm @ 200A, 20V | 2.2V @ 10mA (Typ) | 490nC @ 20V | 9500pF @ 1000V | 1100W | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | D3 |
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Microsemi Corporation |
MOSFET 6N-CH 1200V 78A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 78A
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V
- Power - Max: 370W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock7,152 |
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Standard | 1200V (1.2kV) | 78A | 33 mOhm @ 60A, 20V | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V | 370W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 131A D3
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 131A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V
- Power - Max: 625W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
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Package: D-3 Module |
Stock6,640 |
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Standard | 1200V (1.2kV) | 131A | 20 mOhm @ 100A, 20V | 2.2V @ 5mA (Typ) | 246nC @ 20V | 4750pF @ 1000V | 625W | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | D3 |
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Microsemi Corporation |
MOSFET 4N-CH 1200V 34A SP6
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 34A
- Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
- Power - Max: 780W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,072 |
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Standard | 1200V (1.2kV) | 34A | 348 mOhm @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | 10300pF @ 25V | 780W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 6N-CH 600V 72A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 416W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock7,056 |
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Standard | 600V | 72A | 35 mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi Corporation |
MOSFET 2N-CH 500V 90A SP4
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock6,080 |
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Standard | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 4N-CH 1000V 18A SP4
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 18A
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock7,776 |
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Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 4N-CH 600V 72A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 416W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock6,928 |
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Standard | 600V | 72A | 35 mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 95A SP3
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 95A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 462W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,720 |
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Super Junction | 600V | 95A | 24 mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 95A SP2
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 95A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 462W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: Module |
Stock7,904 |
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Standard | 600V | 95A | 24 mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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Microsemi Corporation |
MOSFET 4N-CH 500V 26A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A
- Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock7,376 |
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Standard | 500V | 26A | 168 mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 65A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 65A
- Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
|
Package: SP6 |
Stock4,544 |
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Standard | 1000V (1kV) | 65A | 156 mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 600V 143A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 143A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Power - Max: 833W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
|
Package: SP6 |
Stock7,376 |
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Standard | 600V | 143A | 18 mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | 28000pF @ 25V | 833W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 55A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 55A
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock7,600 |
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Standard | 1200V (1.2kV) | 55A | 49 mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 65A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 65A
- Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
|
Package: SP6 |
Stock6,864 |
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Standard | 1000V (1kV) | 65A | 156 mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 4N-CH 1000V 18A SP4
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 18A
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock5,776 |
|
Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 4N-CH 500V 51A SP3
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
|
Package: SP3 |
Stock6,720 |
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Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 4N-CH 500V 46A SP4
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 46A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock6,016 |
|
Standard | 500V | 46A | 90 mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 150A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
|
Package: SP6 |
Stock6,024 |
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Standard | 500V | 150A | 28 mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | 19600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |