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Microsemi Corporation |
MOSFET 2N-CH 1700V 106A SP1
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 106A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V
- Power - Max: 700W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock5,616 |
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Standard | 1700V (1.7kV) | 106A | 30 mOhm @ 100A, 20V | 2.3V @ 5mA (Typ) | 380nC @ 20V | 6160pF @ 1000V | 700W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 220A SP3F
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 220A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
- Power - Max: 925W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,568 |
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Standard | 1200V (1.2kV) | 220A | 12 mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | 925W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
POWER MODULE - SIC
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V
- Vgs(th) (Max) @ Id: 3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2300W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock5,024 |
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Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10 mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | 2300W | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
POWER MODULE - SIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock5,776 |
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Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
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Microsemi Corporation |
POWER MODULE - SIC
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V
- Power - Max: 714W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,992 |
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Silicon Carbide (SiC) | 1200V (1.2kV) | 112A (Tc) | 33 mOhm @ 60A, 20V | 3V @ 3mA | 408nC @ 20V | 7680pF @ 1000V | 714W | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 1700V 53A SP1
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 53A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V
- Power - Max: 350W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock5,152 |
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Standard | 1700V (1.7kV) | 53A | 60 mOhm @ 50A, 20V | 2.3V @ 2.5mA (Typ) | 190nC @ 20V | 3080pF @ 1000V | 350W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 143A SP1
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 143A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V
- Power - Max: 600W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock2,944 |
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Standard | 1200V (1.2kV) | 143A | 17 mOhm @ 100A, 20V | 2.3V @ 2mA (Typ) | 360nC @ 20V | 5960pF @ 1000V | 600W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
POWER MODULE - SIC
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
- Power - Max: 2140W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock7,584 |
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Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | 2140W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
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Microsemi Corporation |
MOSFET 4N-CH 1200V 55A SP3F
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 55A
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock7,584 |
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Standard | 1200V (1.2kV) | 55A | 49 mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 6N-CH 1000V 22A SP6P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 22A
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P
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Package: Module |
Stock3,600 |
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Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SP6-P |
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Microsemi Corporation |
POWER MODULE - SIC
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 148A (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 3V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V
- Power - Max: 937W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,944 |
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Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | 937W | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 6N-CH 600V 116A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 116A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 100V
- Power - Max: 625W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P
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Package: Module |
Stock6,256 |
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Standard | 600V | 116A | 21 mOhm @ 88A, 10V | 3.6V @ 6mA | 580nC @ 10V | 13000pF @ 100V | 625W | -40°C ~ 150°C (TJ) | Chassis Mount | Module | SP6-P |
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Microsemi Corporation |
MOSFET 6N-CH 600V 95A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 95A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 462W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock3,264 |
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Super Junction | 600V | 95A | 24 mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 60A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,808 |
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Standard | 1200V (1.2kV) | 60A | 175 mOhm @ 30A, 10V | 5V @ 10mA | 748nC @ 10V | 20600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 150A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock3,120 |
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Silicon Carbide (SiC) | 500V | 150A | 28 mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | 19600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 78A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 78A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock5,520 |
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Standard | 1000V (1kV) | 78A | 105 mOhm @ 39A, 10V | 5V @ 10mA | 744nC @ 10V | 20700pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 4N-CH 1000V 43A SP6
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 43A
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
- Power - Max: 780W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,584 |
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Standard | 1000V (1kV) | 43A | 210 mOhm @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | 10400pF @ 25V | 780W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 6N-CH 900V 59A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 59A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
- Power - Max: 462W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock7,648 |
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Super Junction | 900V | 59A | 60 mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | 13600pF @ 100V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi Corporation |
MOSFET 2N-CH 500V 180A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,232 |
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Standard | 500V | 180A | 20 mOhm @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | 28000pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 4N-CH 500V 99A SP6
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 99A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 781W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,392 |
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Standard | 500V | 99A | 39 mOhm @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | 14000pF @ 25V | 781W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 60A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,656 |
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Standard | 1200V (1.2kV) | 60A | 175 mOhm @ 30A, 10V | 5V @ 10mA | 748nC @ 10V | 20600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 4N-CH 200V 208A SP6
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 208A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
- Power - Max: 781W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock5,248 |
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Standard | 200V | 208A | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | 781W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 4N-CH 1200V 28A SP3
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 28A
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
- Power - Max: 125W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock3,232 |
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Standard | 1200V (1.2kV) | 28A | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | 125W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 78A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 78A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
|
Package: SP6 |
Stock2,688 |
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Standard | 1000V (1kV) | 78A | 105 mOhm @ 39A, 10V | 5V @ 10mA | 744nC @ 10V | 20700pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 20A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Power - Max: 520W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock7,040 |
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Standard | 1000V (1kV) | 20A | 720 mOhm @ 10A, 10V | 4V @ 2.5mA | - | 6000pF @ 25V | 520W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 180A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,032 |
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Standard | 500V | 180A | 20 mOhm @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | 28000pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 163A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 163A
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
- Power - Max: 1136W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,416 |
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Standard | 500V | 163A | 22.5 mOhm @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | 1136W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 4N-CH 500V 90A SP6
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock2,592 |
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Standard | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |