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Microsemi Corporation |
MOSFET 2N-CH 1200V 17A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 17A
- Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,264 |
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Standard | 1200V (1.2kV) | 17A | 684 mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 100V 139A SP3
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 139A
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock7,984 |
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Standard | 100V | 139A | 10 mOhm @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 22A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 22A
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,920 |
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Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Microsemi Corporation |
MOSFET 4N-CH 900V 30A SP2
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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Package: SP2 |
Stock2,240 |
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Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP2 | SP2 |
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Microsemi Corporation |
MOSFET 2N-CH 900V 30A SP1
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock2,400 |
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Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 900V 30A SP1
- FET Type: 2 N Channel (Dual Buck Chopper)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock5,008 |
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Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | 250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET MODULE
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,624 |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
MOSFET SIC PHASE LEG MODULE
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock5,008 |
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- | - | - | - | - | - | - | - | - | Chassis Mount | Module | Module |
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Microsemi Corporation |
MOSFET 2N-CH 600V 20A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock7,520 |
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Standard | 600V | 20A | 276 mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | 5316pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 6N-CH 500V 51A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock5,952 |
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Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi Corporation |
MOSFET 2N-CH 500V 90A SP4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 90A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock6,144 |
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Standard | 500V | 90A | 45 mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 149A LP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 149A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock3,648 |
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Standard | 500V | 149A | 25 mOhm @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | 29600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 163A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 163A
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
- Power - Max: 1136W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,552 |
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Standard | 500V | 163A | 22.5 mOhm @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | 1136W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 46A SP4
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 46A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,032 |
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Standard | 500V | 46A | 90 mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 51A SP4
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock2,016 |
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Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 99A SP6
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 99A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
- Power - Max: 781W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock4,736 |
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Standard | 500V | 99A | 39 mOhm @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | 14000pF @ 25V | 781W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 50A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock2,640 |
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Standard | 500V | 50A | 84 mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | 10800pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 149A SP4
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 149A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock7,280 |
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Standard | 500V | 149A | 25 mOhm @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | 29600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 170A SP4
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 170A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 85A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock3,184 |
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Silicon Carbide (SiC) | 500V | 170A | 19 mOhm @ 85A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 500V 25A SP1
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 25A
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
- Power - Max: 208W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock3,776 |
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Standard | 500V | 25A | 180 mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | 5448pF @ 25V | 208W | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi Corporation |
MOSFET 6N-CH 200V 104A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 104A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
|
Package: SP6 |
Stock4,608 |
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Standard | 200V | 104A | 19 mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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Microsemi Corporation |
MOSFET 2N-CH 200V 175A SP4
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 175A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock4,592 |
|
Standard | 200V | 175A | 12 mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 333A SP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 333A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock4,528 |
|
Standard | 200V | 333A | 5 mOhm @ 166.5A, 10V | 4V @ 8mA | 1184nC @ 10V | 40800pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 89A SP4
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 89A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock2,976 |
|
Standard | 200V | 89A | 24 mOhm @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | 6850pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 104A SP4
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 104A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock4,016 |
|
Standard | 200V | 104A | 19 mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 175A SP6
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 175A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
- Power - Max: 694W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock3,920 |
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Standard | 200V | 175A | 12 mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 333A SP4
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 333A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,560 |
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Standard | 200V | 333A | 5 mOhm @ 166.5A, 10V | 4V @ 8mA | 1184nC @ 10V | 40800pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi Corporation |
MOSFET 6N-CH 1200V 17A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 17A
- Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock5,408 |
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Standard | 1200V (1.2kV) | 17A | 684 mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |