Page 22 - Microsemi Corporation Products - Transistors - FETs, MOSFETs - Single

APT4016BVRG
Microsemi Corporation

MOSFET N-CH 400V TO-247

Package: -

Stock3,088
APT5014B2VRG
Microsemi Corporation

MOSFET N-CH 500V T-MAX

Package: -

Stock4,128
APT12080JVR
Microsemi Corporation

MOSFET N-CH 1.2KV 15A ISOTOP

Package: SOT-227-4, miniBLOC

Stock5,600
APT4012BVRG
Microsemi Corporation

MOSFET N-CH 400V 37A TO247AD

Package: TO-247-3

Stock6,624
APT4012BVR
Microsemi Corporation

MOSFET N-CH 400V 37A TO247AD

Package: TO-247-3

Stock103,464
APT10M11JVR
Microsemi Corporation

MOSFET N-CH 100V 144A ISOTOP

Package: SOT-227-4, miniBLOC

Stock2,384
APT10M07JVR
Microsemi Corporation

MOSFET N-CH 100V 225A ISOTOP

Package: SOT-227-4, miniBLOC

Stock7,952
APT58MJ50J
Microsemi Corporation

MOSFET N-CH 500V 58A ISOTOP

Package: SOT-227-4, miniBLOC

Stock5,088
APT8075BN
Microsemi Corporation

MOSFET N-CH 800V 13A TO247AD

Package: TO-247-3

Stock94,800
APT8018JN
Microsemi Corporation

MOSFET N-CH 800V 40A ISOTOP

Package: SOT-227-4, miniBLOC

Stock4,864
APT6040BNG
Microsemi Corporation

MOSFET N-CH 600V 18A TO247AD

Package: TO-247-3

Stock5,600
APT6040BN
Microsemi Corporation

MOSFET N-CH 600V 18A TO247AD

Package: TO-247-3

Stock87,600
APT6030BN
Microsemi Corporation

MOSFET N-CH 600V 23A TO247AD

Package: TO-247-3

Stock188,664
APT5025BN
Microsemi Corporation

MOSFET N-CH 500V 23A TO247AD

Package: TO-247-3

Stock171,864
APT5022BNG
Microsemi Corporation

MOSFET N-CH 500V 27A TO247AD

Package: TO-247-3

Stock7,280
APT5020BNFR
Microsemi Corporation

MOSFET N-CH 500V 28A TO247AD

Package: TO-247-3

Stock7,200
APT5020BN
Microsemi Corporation

MOSFET N-CH 500V 28A TO247AD

Package: TO-247-3

Stock61,200
APT5012JN
Microsemi Corporation

MOSFET N-CH 500V 43A ISOTOP

Package: SOT-227-4, miniBLOC

Stock4,608
APT40M75JN
Microsemi Corporation

MOSFET N-CH 400V 56A ISOTOP

Package: SOT-227-4, miniBLOC

Stock10,032
APT40M42JN
Microsemi Corporation

MOSFET N-CH 400V 86A ISOTOP

Package: SOT-227-4, miniBLOC

Stock5,888

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT4016BVRG	Microsemi Corporation	MOSFET N-CH 400V TO-247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,088	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT5014B2VRG	Microsemi Corporation	MOSFET N-CH 500V T-MAX FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT12080JVR	Microsemi Corporation	MOSFET N-CH 1.2KV 15A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 485nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,600	MOSFET (Metal Oxide)	1200V	15A (Tc)	10V	4V @ 2.5mA	485nC @ 10V	7800pF @ 25V	±30V	-	450W (Tc)	800 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT4012BVRG	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock6,624	MOSFET (Metal Oxide)	400V	37A (Tc)	10V	4V @ 1mA	290nC @ 10V	5400pF @ 25V	±30V	-	370W (Tc)	120 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT4012BVR	Microsemi Corporation	MOSFET N-CH 400V 37A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock103,464	MOSFET (Metal Oxide)	400V	37A (Tc)	10V	4V @ 1mA	290nC @ 10V	5400pF @ 25V	±30V	-	370W (Tc)	120 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT10M11JVR	Microsemi Corporation	MOSFET N-CH 100V 144A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock2,384	MOSFET (Metal Oxide)	100V	144A (Tc)	10V	4V @ 2.5mA	450nC @ 10V	10300pF @ 25V	±30V	-	450W (Tc)	-	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT10M07JVR	Microsemi Corporation	MOSFET N-CH 100V 225A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 1050nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,952	MOSFET (Metal Oxide)	100V	225A (Tc)	10V	4V @ 5mA	1050nC @ 10V	21600pF @ 25V	±30V	-	700W (Tc)	-	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT58MJ50J	Microsemi Corporation	MOSFET N-CH 500V 58A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,088	MOSFET (Metal Oxide)	500V	58A (Tc)	10V	5V @ 2.5mA	340nC @ 10V	13500pF @ 25V	±30V	-	540W (Tc)	65 mOhm @ 42A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT8075BN	Microsemi Corporation	MOSFET N-CH 800V 13A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock94,800	MOSFET (Metal Oxide)	800V	13A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	750 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT8018JN	Microsemi Corporation	MOSFET N-CH 800V 40A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,864	MOSFET (Metal Oxide)	800V	40A (Tc)	10V	4V @ 5mA	700nC @ 10V	14000pF @ 25V	±30V	-	690W (Tc)	180 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT6040BNG	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock5,600	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	400 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT6040BN	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock87,600	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	400 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT6030BN	Microsemi Corporation	MOSFET N-CH 600V 23A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock188,664	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	300 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT5025BN	Microsemi Corporation	MOSFET N-CH 500V 23A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock171,864	MOSFET (Metal Oxide)	500V	23A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	250 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT5022BNG	Microsemi Corporation	MOSFET N-CH 500V 27A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock7,280	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	220 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT5020BNFR	Microsemi Corporation	MOSFET N-CH 500V 28A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock7,200	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT5020BN	Microsemi Corporation	MOSFET N-CH 500V 28A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock61,200	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT5012JN	Microsemi Corporation	MOSFET N-CH 500V 43A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 370nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 21.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,608	MOSFET (Metal Oxide)	500V	43A (Tc)	10V	4V @ 2.5mA	370nC @ 10V	6500pF @ 25V	±30V	-	520W (Tc)	120 mOhm @ 21.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT40M75JN	Microsemi Corporation	MOSFET N-CH 400V 56A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 370nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock10,032	MOSFET (Metal Oxide)	400V	56A (Tc)	10V	4V @ 2.5mA	370nC @ 10V	6800pF @ 25V	±30V	-	520W (Tc)	75 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT40M42JN	Microsemi Corporation	MOSFET N-CH 400V 86A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 760nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,888	MOSFET (Metal Oxide)	400V	86A (Tc)	10V	4V @ 5mA	760nC @ 10V	14000pF @ 25V	±30V	-	690W (Tc)	42 mOhm @ 43A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
APT4065BNG	Microsemi Corporation	MOSFET N-CH 400V 11A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock2,752	MOSFET (Metal Oxide)	400V	11A (Tc)	10V	4V @ 1mA	55nC @ 10V	950pF @ 25V	±30V	-	180W (Tc)	650 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT1002RBNG	Microsemi Corporation	MOSFET N-CH 1KV 8A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock2,464	MOSFET (Metal Oxide)	1000V	8A (Tc)	10V	4V @ 1mA	105nC @ 10V	1800pF @ 25V	±30V	-	240W (Tc)	1.6 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT1001RBN	Microsemi Corporation	MOSFET N-CH 1KV 11A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock2,512	MOSFET (Metal Oxide)	1000V	11A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	1 Ohm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
APT1001R1BN	Microsemi Corporation	MOSFET N-CH 1KV 10.5A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock123,876	MOSFET (Metal Oxide)	1000V	10.5A (Tc)	10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	±30V	-	310W (Tc)	1.1 Ohm @ 5.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
JANTXV2N6898	Microsemi Corporation	P CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 15.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock7,984	MOSFET (Metal Oxide)	100V	25A (Tc)	10V	4V @ 250µA	-	3000pF @ 25V	±20V	-	150W (Tc)	200 mOhm @ 15.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AA, TO-3