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NXP |
DIODE SCHOTTKY 40V 120MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 40V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,280 |
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40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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NXP |
DIODE GEN PURP 100V 215MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-76, SOD-323 |
Stock4,832 |
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100V | 215mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 4ns | 500nA @ 80V | 1pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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NXP |
DIODE GEN PURP 200V 250MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 200V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-76, SOD-323 |
Stock3,344 |
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200V | 250mA (DC) | 1.25V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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NXP |
DIODE GEN PURP 200V 250MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 200V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-76, SOD-323 |
Stock2,560 |
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200V | 250mA (DC) | 1.25V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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NXP |
DIODE GEN PURP 100V 215MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-76, SOD-323 |
Stock7,680 |
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100V | 215mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
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NXP |
DIODE GEN PURP 600V 8A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18ns
- Current - Reverse Leakage @ Vr: 20µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,368 |
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600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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NXP |
DIODE SCHOTTKY 30V 200MA SC75
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-75, SOT-416 |
Stock5,392 |
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30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-75, SOT-416 | SC-75 | 150°C (Max) |
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NXP |
DIODE GEN PURP 75V 215MA SC75
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5nA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-75, SOT-416 |
Stock6,336 |
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75V | 215mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-75, SOT-416 | SC-75 | 150°C (Max) |
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NXP |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-201AD, Axial |
Stock4,368 |
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600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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NXP |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-201AD, Axial |
Stock6,576 |
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600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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NXP |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-201AD, Axial |
Stock2,496 |
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600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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NXP |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-201AD, Axial |
Stock6,192 |
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600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 150°C (Max) |
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NXP |
DIODE GEN PURP 1.5KV 10A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 6.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 220ns
- Current - Reverse Leakage @ Vr: 250µA @ 1300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220FP
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock4,352 |
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1500V | 10A (DC) | 1.35V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | 250µA @ 1300V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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NXP |
DIODE GEN PURP 1.5KV 12A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 350ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock6,000 |
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1500V | 12A (DC) | 1.3V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | - | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |