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ON Semiconductor |
MOSFET N-CH 20V 0.915A SC89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 300mW (Tj)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89
- Package / Case: SC-89, SOT-490
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Package: SC-89, SOT-490 |
Stock7,360 |
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MOSFET (Metal Oxide) | 20V | 915mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 1.82nC @ 4.5V | 110pF @ 16V | ±6V | - | 300mW (Tj) | 230 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89 | SC-89, SOT-490 |
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ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock3,104 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 5.1nC @ 4.5V | 410pF @ 10V | ±12V | - | 1W (Ta) | 38 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 100V 0.7A CPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 142pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 700mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,264 |
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MOSFET (Metal Oxide) | 100V | 700mA (Ta) | 4V, 10V | 2.6V @ 1mA | 3.7nC @ 10V | 142pF @ 20V | ±20V | - | 1W (Ta) | 1.7 Ohm @ 700mA, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 27A U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 690mW (Ta), 20.2W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,968 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta), 27A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 10.3nC @ 10V | 500pF @ 15V | ±20V | - | 690mW (Ta), 20.2W (Tc) | 17 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 600V 0.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,904 |
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MOSFET (Metal Oxide) | 600V | 800mA (Ta) | 10V | 4.5V @ 50µA | 4.9nC @ 10V | 92pF @ 25V | ±30V | - | 26W (Tc) | 15 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.2A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock2,544 |
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MOSFET (Metal Oxide) | 30V | 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 987pF @ 15V | ±20V | - | 750mW (Ta) | 6.95 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8.2A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc)
- Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock4,384 |
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MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6nC @ 10V | 987pF @ 15V | ±20V | - | 2.51W (Ta), 23.6W (Tc) | 6.95 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
- Rds On (Max) @ Id, Vgs: 5.88 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock5,552 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6nC @ 10V | 987pF @ 15V | ±20V | - | 2.49W (Ta), 23.6W (Tc) | 5.88 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 20V 750MA SOT-23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,776 |
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MOSFET (Metal Oxide) | 20V | 750mA (Ta) | 4.5V, 10V | 2.4V @ 250µA | - | 125pF @ 5V | ±20V | - | 400mW (Ta) | 90 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 7A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock2,400 |
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MOSFET (Metal Oxide) | 20V | 7A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 8.4nC @ 4.5V | 660pF @ 10V | ±12V | - | 1.5W (Ta) | 24 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 12V 5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock3,984 |
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MOSFET (Metal Oxide) | 12V | 5A (Ta) | 1.8V, 4.5V | 1.4V @ 1mA | 6.9nC @ 4.5V | 660pF @ 6V | ±10V | - | 1.5W (Ta) | 43 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 200V 0.5A CPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 250mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,568 |
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MOSFET (Metal Oxide) | 200V | 500mA (Ta) | 4V, 10V | 2.6V @ 1mA | 2.4nC @ 10V | 90pF @ 20V | ±20V | - | 1W (Ta) | 3.7 Ohm @ 250mA, 10V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 48A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 23.2W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock5,904 |
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MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 10.8nC @ 4.5V | 1264pF @ 15V | ±20V | - | 920mW (Ta), 23.2W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 38A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock3,472 |
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MOSFET (Metal Oxide) | 30V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 16nC @ 10V | 913pF @ 15V | ±20V | - | 920mW (Ta), 20.8W (Tc) | 7.3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 24V 6A EFCP
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: EFCP1313-4CC-037
- Package / Case: 4-XBGA, 4-FCBGA
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Package: 4-XBGA, 4-FCBGA |
Stock2,048 |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | EFCP1313-4CC-037 | 4-XBGA, 4-FCBGA |
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ON Semiconductor |
MOSFET N-CH 24V 6A EFCP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EFCP1515-4CC-037
- Package / Case: 4-XBGA, 4-FCBGA
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Package: 4-XBGA, 4-FCBGA |
Stock333,744 |
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MOSFET (Metal Oxide) | 24V | 6A (Ta) | 2.5V, 4.5V | 1.3V @ 1mA | 8.8nC @ 4.5V | - | ±12V | - | 1.6W (Ta) | 31 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | EFCP1515-4CC-037 | 4-XBGA, 4-FCBGA |
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|
ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 2.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock3,360 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 0.9V, 2.5V | 800mV @ 1mA | 11nC @ 2.5V | 630pF @ 10V | ±5V | - | 1W (Ta) | 40 mOhm @ 2A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 60V 4.5A CPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,416 |
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MOSFET (Metal Oxide) | 60V | 4.5A (Ta) | 4V, 10V | - | 10nC @ 10V | 505pF @ 20V | ±20V | - | 1.6W (Ta) | 78 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock3,216 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | - | 5.1nC @ 4.5V | 410pF @ 10V | ±12V | - | 1W (Ta) | 38 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 35V 6A CPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,488 |
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MOSFET (Metal Oxide) | 35V | 6A (Ta) | 4V, 10V | 2.6V @ 1mA | 10nC @ 10V | 470pF @ 20V | ±20V | - | 1.6W (Ta) | 37 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 30V 1.6A SC-70FL
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock4,752 |
|
- | - | - | 4V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH 12V 5.5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock7,088 |
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MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.5V, 4.5V | - | 12nC @ 4.5V | 1250pF @ 6V | ±10V | - | 1.4W (Ta) | 35 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 3.5A SCH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock72,720 |
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MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | - | 2.8nC @ 4.5V | 260pF @ 10V | ±10V | - | 800mW (Ta) | 64 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
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|
ON Semiconductor |
MOSFET P-CH 12V 5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock7,632 |
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MOSFET (Metal Oxide) | 12V | 5A (Ta) | 1.8V, 4.5V | - | 6.9nC @ 4.5V | 660pF @ 6V | ±10V | - | 1.5W (Ta) | 43 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 20V 3.2A SC88
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,416 |
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MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | 850pF @ 10V | ±12V | - | 1.2W (Ta) | 67 mOhm @ 2.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET P-CH 20V 4.5A SOT563
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 49 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563/SCH6
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock3,792 |
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MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.5V, 4.5V | 1.3V @ 1mA | 11nC @ 4.5V | 1220pF @ 10V | ±10V | - | 1W (Ta) | 49 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 20V 4A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 83 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock4,464 |
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MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | - | 4.6nC @ 4.5V | 375pF @ 10V | ±10V | - | 1.5W (Ta) | 83 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 1.8A SCH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock36,864 |
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MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 4V, 10V | - | 2nC @ 10V | 88pF @ 10V | ±20V | - | 800mW (Ta) | 180 mOhm @ 900mA, 10V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |