Page 81 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

BXL4004-1E
ON Semiconductor

MOSFET N-CH 40V TO-220-3

Package: TO-220-3

Stock2,784
5HN01C-TB-EX
ON Semiconductor

MOSFET N-CH 50V 100MA CP3

Package: -

Stock3,760
3LP01SS-TL-EX
ON Semiconductor

MOSFET P-CH 30V SOT-623

Package: -

Stock4,192
ATP104-TL-HX
ON Semiconductor

MOSFET P-CH 30V 75A ATPAK

Package: -

Stock3,744
2SK4066-DL-1EX
ON Semiconductor

MOSFET N-CH 60V TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,456
2SK4065-DL-1EX
ON Semiconductor

MOSFET N-CH 75V TO263-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,392
STD5407NNT4G
ON Semiconductor

MOSFET N-CH 40V DPAK-3

Package: -

Stock2,704
NTLUS4C16NTAG
ON Semiconductor

MOSFET N-CH 30V 6UDFN

Package: 6-PowerUFDFN

Stock5,792
FDC642P_SB4N006
ON Semiconductor

MOSFET N-CH SSOT6

Package: -

Stock7,648
SFT1342-E
ON Semiconductor

MOSFET P-CH 60V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,536
CPH6347-TL-HX
ON Semiconductor

MOSFET P-CH 20V 6A SOT23-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,408
CPH6341-TL-EX
ON Semiconductor

MOSFET P-CH 30V 5A SOT23-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,424
2SJ661-1EX
ON Semiconductor

MOSFET P-CH I2PAK

Package: -

Stock2,112
2SJ652-1EX
ON Semiconductor

MOSFET P-CH TO-220FP-3

Package: -

Stock6,736
SFT1452-TL-H
ON Semiconductor

MOSFET P-CH

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,776
SFT1452-H
ON Semiconductor

MOSFET P-CH

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,960
SFT1342-TL-E
ON Semiconductor

MOSFET P-CH

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock174,060
SFT1341-TL-E
ON Semiconductor

MOSFET P-CH

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,000
SFT1341-E
ON Semiconductor

MOSFET P-CH

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock144,000
SFT1341-C-TL-E
ON Semiconductor

MOSFET P-CH

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock276,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BXL4004-1E	ON Semiconductor	MOSFET N-CH 40V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,784	MOSFET (Metal Oxide)	40V	100A (Ta)	4.5V, 10V	-	140nC @ 10V	8200pF @ 20V	±20V	-	75W (Tc)	3.9 mOhm @ 50A, 10V	150°C	Through Hole	TO-220-3	TO-220-3
5HN01C-TB-EX	ON Semiconductor	MOSFET N-CH 50V 100MA CP3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,760	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3LP01SS-TL-EX	ON Semiconductor	MOSFET P-CH 30V SOT-623 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,192	MOSFET (Metal Oxide)	30V	100mA (Ta)	1.5V, 4V	-	1.43nC @ 10V	7.5pF @ 10V	±10V	-	150mW (Ta)	10.4 Ohm @ 50mA, 4V	150°C (TJ)	-	-	-
ATP104-TL-HX	ON Semiconductor	MOSFET P-CH 30V 75A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 38A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: -	Package: -	Stock3,744	MOSFET (Metal Oxide)	30V	75A (Ta)	-	-	76nC @ 10V	3950pF @ 10V	-	-	60W (Tc)	8.4 mOhm @ 38A, 10V	150°C (TJ)	Surface Mount	ATPAK	-
2SK4066-DL-1EX	ON Semiconductor	MOSFET N-CH 60V TO263-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,456	MOSFET (Metal Oxide)	60V	100A (Ta)	-	-	220nC @ 10V	12500pF @ 20V	-	-	1.65W (Ta), 90W (Tc)	4.7 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK4065-DL-1EX	ON Semiconductor	MOSFET N-CH 75V TO263-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,392	MOSFET (Metal Oxide)	75V	100A (Ta)	-	-	220nC @ 10V	12200pF @ 20V	-	-	1.65W (Ta), 90W (Tc)	6 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD5407NNT4G	ON Semiconductor	MOSFET N-CH 40V DPAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,704	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTLUS4C16NTAG	ON Semiconductor	MOSFET N-CH 30V 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.37W (Ta) Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock5,792	MOSFET (Metal Oxide)	30V	9.4A (Ta)	1.8V, 10V	1.1V @ 250µA	7.5nC @ 4.5V	690pF @ 15V	±12V	-	2.37W (Ta)	11.4 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
FDC642P_SB4N006	ON Semiconductor	MOSFET N-CH SSOT6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SFT1342-E	ON Semiconductor	MOSFET P-CH 60V 12A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,536	MOSFET (Metal Oxide)	60V	12A (Ta)	4V, 10V	2.6V @ 1mA	26nC @ 10V	1150pF @ 20V	±20V	-	15W (Tc)	62 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
CPH6347-TL-HX	ON Semiconductor	MOSFET P-CH 20V 6A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,408	MOSFET (Metal Oxide)	20V	6A (Ta)	1.8V, 4.5V	1.4V @ 1mA	10.5nC @ 4.5V	860pF @ 10V	±12V	-	1.6W (Ta)	39 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
CPH6341-TL-EX	ON Semiconductor	MOSFET P-CH 30V 5A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,424	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	-	10nC @ 10V	430pF @ 10V	±20V	-	1.6W (Ta)	59 mOhm @ 3A, 10V	150°C	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
2SJ661-1EX	ON Semiconductor	MOSFET P-CH I2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,112	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
2SJ652-1EX	ON Semiconductor	MOSFET P-CH TO-220FP-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,736	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
SFT1452-TL-H	ON Semiconductor	MOSFET P-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,776	MOSFET (Metal Oxide)	250V	3A (Ta)	10V	4.5V @ 1mA	4.2nC @ 10V	210pF @ 20V	±30V	-	1W (Ta), 26W (Tc)	2.4 Ohm @ 1.5A, 10V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1452-H	ON Semiconductor	MOSFET P-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,960	MOSFET (Metal Oxide)	250V	3A (Ta)	10V	4.5V @ 1mA	4.2nC @ 10V	210pF @ 20V	±30V	-	1W (Ta), 26W (Tc)	2.4 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
SFT1342-TL-E	ON Semiconductor	MOSFET P-CH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock174,060	MOSFET (Metal Oxide)	60V	12A (Ta)	4V, 10V	2.6V @ 1mA	26nC @ 10V	1150pF @ 20V	±20V	-	1W (Ta), 15W (Tc)	62 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1341-TL-E	ON Semiconductor	MOSFET P-CH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,000	MOSFET (Metal Oxide)	40V	10A (Ta)	1.8V, 4.5V	1.4V @ 1mA	8nC @ 4.5V	650pF @ 20V	±10V	-	1W (Ta), 15W (Tc)	112 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1341-E	ON Semiconductor	MOSFET P-CH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock144,000	MOSFET (Metal Oxide)	40V	10A (Ta)	1.8V, 4.5V	1.4V @ 1mA	8nC @ 4.5V	650pF @ 20V	±10V	-	1W (Ta), 15W (Tc)	112 mOhm @ 5A, 4.5V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
SFT1341-C-TL-E	ON Semiconductor	MOSFET P-CH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock276,000	MOSFET (Metal Oxide)	40V	10A (Ta)	-	1.4V @ 1mA	8nC @ 4.5V	650pF @ 20V	-	-	1W (Ta), 15W (Tc)	112 mOhm @ 5A, 4.5V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63