Page 37 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NDD60N360U1-1G
ON Semiconductor

MOSFET N-CH 600V 114A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,496
NVMFS4C01NT1G
ON Semiconductor

MOSFET N-CH 30V 49A SO8FL

Package: 8-PowerTDFN

Stock6,112
NVMFS5830NLWFT3G
ON Semiconductor

MOSFET N-CH 40V 172A SO8FL

Package: 8-PowerTDFN

Stock3,824
2SJ661-1E
ON Semiconductor

MOSFET P-CH 60V 38A

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,504
NVB25P06T4G
ON Semiconductor

MOSFET P-CH 60V 27.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,252
NVMFS5830NLT3G
ON Semiconductor

MOSFET N-CH 40V 185A SO8FL

Package: 8-PowerTDFN

Stock4,928
NTP5862NG
ON Semiconductor

MOSFET N-CH 60V TO-220-3

Package: TO-220-3

Stock7,584
NTMFS6B14NT3G
ON Semiconductor

MOSFET N-CH 100V 10A SO8FL

Package: 8-PowerTDFN

Stock6,576
NTMFS5C426NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,856
NTTFS4965NFTWG
ON Semiconductor

MOSFET N-CH 30V 64A U8FL

Package: 8-PowerWDFN

Stock3,344
NVMFS6B14NT1G
ON Semiconductor

MOSFET N-CH 100V 15A SO8FL

Package: 8-PowerTDFN

Stock5,120
NVMFS4C01NWFT3G
ON Semiconductor

MOSFET N-CH 30V 49A SO8FL

Package: 8-PowerTDFN

Stock3,488
NVMFS5C426NWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,984
NVMFS5C426NWFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock3,760
NVMFS6B14NLWFT3G
ON Semiconductor

MOSFET N-CH 100V 11A 5DFN

Package: 8-PowerTDFN, 5 Leads

Stock3,440
NVMFS6B14NWFT3G
ON Semiconductor

MOSFET N-CH 100V 15A SO8FL

Package: 8-PowerTDFN

Stock3,200
NVMFS4C01NT3G
ON Semiconductor

MOSFET N-CH 30V 49A SO8FL

Package: 8-PowerTDFN

Stock6,992
NVMFS5C628NLWFAFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,312
NVMFS5C628NLWFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN

Stock5,152
NTBV45N06LT4G
ON Semiconductor

MOSFET N-CH 60V 45A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,712

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NDD60N360U1-1G	ON Semiconductor	MOSFET N-CH 600V 114A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,496	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	26nC @ 10V	790pF @ 50V	±25V	-	114W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NVMFS4C01NT1G	ON Semiconductor	MOSFET N-CH 30V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,112	MOSFET (Metal Oxide)	30V	49A (Ta), 319A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.84W (Ta), 161W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5830NLWFT3G	ON Semiconductor	MOSFET N-CH 40V 172A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,824	MOSFET (Metal Oxide)	40V	29A (Ta)	4.5V, 10V	2.4V @ 250µA	113nC @ 10V	5880pF @ 25V	±20V	-	3.8W (Ta), 158W (Tc)	2.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
2SJ661-1E	ON Semiconductor	MOSFET P-CH 60V 38A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 19A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,504	MOSFET (Metal Oxide)	60V	38A (Ta)	4V, 10V	-	80nC @ 10V	4360pF @ 20V	±20V	-	1.65W (Ta), 65W (Tc)	39 mOhm @ 19A, 10V	150°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
NVB25P06T4G	ON Semiconductor	MOSFET P-CH 60V 27.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 120W (Tj) Rds On (Max) @ Id, Vgs: 82 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,252	MOSFET (Metal Oxide)	60V	27.5A (Ta)	10V	4V @ 250µA	50nC @ 10V	1680pF @ 25V	±15V	-	120W (Tj)	82 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5830NLT3G	ON Semiconductor	MOSFET N-CH 40V 185A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,928	MOSFET (Metal Oxide)	40V	29A (Ta)	4.5V, 10V	2.4V @ 250µA	113nC @ 10V	5880pF @ 25V	±20V	-	3.8W (Ta), 158W (Tc)	2.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTP5862NG	ON Semiconductor	MOSFET N-CH 60V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,584	MOSFET (Metal Oxide)	60V	98A (Tc)	-	4V @ 250µA	82nC @ 10V	6000pF @ 25V	-	-	-	5.7 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS6B14NT3G	ON Semiconductor	MOSFET N-CH 100V 10A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,576	MOSFET (Metal Oxide)	100V	10A (Ta), 50A (Tc)	6V, 10V	4V @ 250µA	20nC @ 10V	1300pF @ 50V	±20V	-	3.1W (Ta), 77W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS5C426NT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,856	MOSFET (Metal Oxide)	40V	41A (Ta), 235A (Tc)	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTTFS4965NFTWG	ON Semiconductor	MOSFET N-CH 30V 64A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,344	MOSFET (Metal Oxide)	30V	16.3A (Ta), 64A (Tc)	-	2.3V @ 250µA	29.4nC @ 10V	2075pF @ 15V	-	-	-	3.5 mOhm @ 20A, 10V	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVMFS6B14NT1G	ON Semiconductor	MOSFET N-CH 100V 15A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,120	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	20nC @ 10V	1300pF @ 50V	±16V	-	3.8W (Ta), 94W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS4C01NWFT3G	ON Semiconductor	MOSFET N-CH 30V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,488	MOSFET (Metal Oxide)	30V	49A (Ta), 319A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.84W (Ta), 161W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C426NWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,984	MOSFET (Metal Oxide)	40V	41A (Ta), 235A (Tc)	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C426NWFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,760	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B14NLWFT3G	ON Semiconductor	MOSFET N-CH 100V 11A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,440	MOSFET (Metal Oxide)	100V	11A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1680pF @ 25V	±16V	-	3.8W (Ta), 94W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	-	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS6B14NWFT3G	ON Semiconductor	MOSFET N-CH 100V 15A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,200	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	20nC @ 10V	1300pF @ 50V	±16V	-	3.8W (Ta), 94W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS4C01NT3G	ON Semiconductor	MOSFET N-CH 30V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,992	MOSFET (Metal Oxide)	30V	49A (Ta), 319A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.84W (Ta), 161W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C628NLWFAFT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,312	MOSFET (Metal Oxide)	60V	28A (Ta), 150A (Tc)	4.5V, 10V	2V @ 135µA	52nC @ 10V	3600pF @ 25V	±20V	-	3.7W (Ta), 110W (Tc)	2.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C628NLWFT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,152	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 135µA	52nC @ 10V	3600pF @ 25V	±20V	-	3.7W (Ta), 110W (Tc)	2.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTBV45N06LT4G	ON Semiconductor	MOSFET N-CH 60V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,712	MOSFET (Metal Oxide)	60V	45A (Ta)	-	2V @ 250µA	32nC @ 5V	1700pF @ 25V	-	-	2.4W (Ta), 125W (Tj)	28 mOhm @ 22.5A, 5V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C430NLWFAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,096	MOSFET (Metal Oxide)	40V	38A (Ta), 200A (Tc)	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C430NLWFT1G	ON Semiconductor	MOSFET N-CH 40V 200A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,648	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	70nC @ 10V	4300pF @ 20V	±20V	-	3.8W (Ta), 110W (Tc)	1.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5C426NAFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,312	MOSFET (Metal Oxide)	40V	41A (Ta), 235A (Tc)	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5C426NT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,808	MOSFET (Metal Oxide)	40V	-	10V	3.5V @ 250µA	65nC @ 10V	4300pF @ 25V	±20V	-	3.8W (Ta), 128W (Tc)	1.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B14NLT1G	ON Semiconductor	MOSFET N-CH 100V 11A DFN5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,832	MOSFET (Metal Oxide)	100V	11A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1680pF @ 25V	±16V	-	3.8W (Ta), 94W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVATS5A302PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 84W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,696	MOSFET (Metal Oxide)	60V	80A (Ta)	4.5V, 10V	2.6V @ 1mA	115nC @ 10V	5400pF @ 20V	±20V	-	84W (Tc)	13 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS6B14NLT3G	ON Semiconductor	MOSFET N-CH 100V 11A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,560	MOSFET (Metal Oxide)	100V	11A (Ta), 55A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1680pF @ 25V	±16V	-	3.8W (Ta), 94W (Tc)	13 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS6B14NT3G	ON Semiconductor	MOSFET N-CH 100V 15A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,376	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	20nC @ 10V	1300pF @ 50V	±16V	-	3.8W (Ta), 94W (Tc)	15 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN