Page 42 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD80N02-001
ON Semiconductor

MOSFET N-CH 24V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock10,728
MPF990
ON Semiconductor

MOSFET N-CH 90V 2A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,264
MPF960
ON Semiconductor

MOSFET N-CH 60V 2A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,296
NVMFS6B03NLWFT1G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

Package: 8-PowerTDFN

Stock3,168
NVMFS6B03NWFT1G
ON Semiconductor

MOSFET N-CH 100V 132A SO8FL

Package: 8-PowerTDFN

Stock3,728
NVMFS6B03NLT1G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

Package: 8-PowerTDFN

Stock4,880
NVMFS6B03NT1G
ON Semiconductor

MOSFET N-CH 100V 132A SO8FL

Package: 8-PowerTDFN

Stock4,000
NVMFS6B03NLWFT3G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

Package: 8-PowerTDFN

Stock5,680
NVMFS6B03NWFT3G
ON Semiconductor

MOSFET N-CH 100V 132A SO8FL

Package: 8-PowerTDFN

Stock5,056
NVMFS6B03NLT3G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

Package: 8-PowerTDFN

Stock2,064
NVMFS6B03NT3G
ON Semiconductor

MOSFET N-CH 100V 132A SO8FL

Package: 8-PowerTDFN

Stock3,376
NTMFS4H01NFT1G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

Package: 8-PowerTDFN

Stock2,656
NTMFS6B03NT3G
ON Semiconductor

MOSFET N-CH 100V 19A SO8FL

Package: 8-PowerTDFN

Stock7,680
NTMFS4H01NT1G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

Package: 8-PowerTDFN

Stock6,752
2SK4094-1E
ON Semiconductor

MOSFET N-CH 60V 100A TO220-3

Package: TO-220-3

Stock828,000
NTMFS4H01NFT3G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

Package: 8-PowerTDFN

Stock2,848
NTMFS4C01NT1G
ON Semiconductor

MOSFET N-CH 30V 47A SO8FL

Package: 8-PowerTDFN

Stock8,484
NTMFS4C020NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock4,240
NTMFS4H01NT3G
ON Semiconductor

MOSFET N-CH 25V 54A SO8FL

Package: 8-PowerTDFN

Stock6,608
NTMFS4H013NFT1G
ON Semiconductor

MOSFET N-CH 25V 35A SO8FL

Package: 8-PowerTDFN

Stock3,680

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD80N02-001	ON Semiconductor	MOSFET N-CH 24V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock10,728	MOSFET (Metal Oxide)	24V	80A (Tc)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	2600pF @ 20V	±20V	-	75W (Tc)	5.8 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
MPF990	ON Semiconductor	MOSFET N-CH 90V 2A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,264	MOSFET (Metal Oxide)	90V	2A (Ta)	10V	3.5V @ 1mA	-	70pF @ 25V	±20V	-	1W (Ta)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MPF960	ON Semiconductor	MOSFET N-CH 60V 2A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,296	MOSFET (Metal Oxide)	60V	2A (Ta)	10V	3.5V @ 1mA	-	70pF @ 25V	±20V	-	1W (Ta)	1.7 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
NVMFS6B03NLWFT1G	ON Semiconductor	MOSFET N-CH 100V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,168	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	9.4nC @ 10V	5320pF @ 25V	±16V	-	3.9W (Ta), 198W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NWFT1G	ON Semiconductor	MOSFET N-CH 100V 132A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,728	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	58nC @ 10V	4200pF @ 50V	±16V	-	3.9W (Ta), 198W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NLT1G	ON Semiconductor	MOSFET N-CH 100V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,880	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	9.4nC @ 10V	5320pF @ 25V	±16V	-	3.9W (Ta), 198W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NT1G	ON Semiconductor	MOSFET N-CH 100V 132A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,000	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	58nC @ 10V	4200pF @ 50V	±16V	-	3.9W (Ta), 198W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NLWFT3G	ON Semiconductor	MOSFET N-CH 100V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,680	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	9.4nC @ 10V	5320pF @ 25V	±16V	-	3.9W (Ta), 198W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NWFT3G	ON Semiconductor	MOSFET N-CH 100V 132A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,056	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	58nC @ 10V	4200pF @ 50V	±16V	-	3.9W (Ta), 198W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NLT3G	ON Semiconductor	MOSFET N-CH 100V 20A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,064	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	9.4nC @ 10V	5320pF @ 25V	±16V	-	3.9W (Ta), 198W (Tc)	4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS6B03NT3G	ON Semiconductor	MOSFET N-CH 100V 132A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 198W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,376	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	58nC @ 10V	4200pF @ 50V	±16V	-	3.9W (Ta), 198W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4H01NFT1G	ON Semiconductor	MOSFET N-CH 25V 54A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5538pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,656	MOSFET (Metal Oxide)	25V	54A (Ta), 334A (Tc)	4.5V, 10V	2.1V @ 250µA	82nC @ 10V	5538pF @ 12V	±20V	-	3.2W (Ta), 125W (Tc)	0.7 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS6B03NT3G	ON Semiconductor	MOSFET N-CH 100V 19A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 165W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,680	MOSFET (Metal Oxide)	100V	19A (Ta), 132A (Tc)	6V, 10V	4V @ 250µA	58nC @ 10V	4200pF @ 50V	±20V	-	3.4W (Ta), 165W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4H01NT1G	ON Semiconductor	MOSFET N-CH 25V 54A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5693pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,752	MOSFET (Metal Oxide)	25V	54A (Ta), 334A (Tc)	4.5V, 10V	2.1V @ 250µA	85nC @ 10V	5693pF @ 12V	±20V	-	3.2W (Ta), 125W (Tc)	0.7 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
2SK4094-1E	ON Semiconductor	MOSFET N-CH 60V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock828,000	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	220nC @ 10V	12500pF @ 20V	±20V	-	1.75W (Ta), 90W (Tc)	5 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTMFS4H01NFT3G	ON Semiconductor	MOSFET N-CH 25V 54A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5538pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,848	MOSFET (Metal Oxide)	25V	54A (Ta), 334A (Tc)	4.5V, 10V	2.1V @ 250µA	82nC @ 10V	5538pF @ 12V	±20V	-	3.2W (Ta), 125W (Tc)	0.7 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C01NT1G	ON Semiconductor	MOSFET N-CH 30V 47A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock8,484	MOSFET (Metal Oxide)	30V	47A (Ta), 303A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.2W (Ta), 134W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C020NT1G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock4,240	MOSFET (Metal Oxide)	30V	47A (Ta), 303A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.2W (Ta), 134W (Tc)	0.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4H01NT3G	ON Semiconductor	MOSFET N-CH 25V 54A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5693pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,608	MOSFET (Metal Oxide)	25V	54A (Ta), 334A (Tc)	4.5V, 10V	2.1V @ 250µA	85nC @ 10V	5693pF @ 12V	±20V	-	3.2W (Ta), 125W (Tc)	0.7 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4H013NFT1G	ON Semiconductor	MOSFET N-CH 25V 35A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 269A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3923pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,680	MOSFET (Metal Oxide)	25V	43A (Ta), 269A (Tc)	4.5V, 10V	2.1V @ 250µA	56nC @ 10V	3923pF @ 12V	±20V	-	2.7W (Ta), 104W (Tc)	0.9 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVB5860NLT4G	ON Semiconductor	MOSFET N-CH 60V 169A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13216pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 283W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,000	MOSFET (Metal Oxide)	60V	220A (Ta)	4.5V, 10V	3V @ 250µA	220nC @ 10V	13216pF @ 25V	±20V	-	283W (Tc)	3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4C01NT3G	ON Semiconductor	MOSFET N-CH 30V 47A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,472	MOSFET (Metal Oxide)	30V	47A (Ta), 303A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.2W (Ta), 134W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
2SK4065-DL-1E	ON Semiconductor	MOSFET N-CH 75V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,680	MOSFET (Metal Oxide)	75V	100A (Ta)	4V, 10V	-	220nC @ 10V	12200pF @ 20V	±20V	-	1.65W (Ta), 90W (Tc)	6 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVB6410ANT4G	ON Semiconductor	MOSFET N-CH 100V 76A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock7,248	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	188W (Tc)	13 mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
NTMFS4C020NT3G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 134W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,120	MOSFET (Metal Oxide)	30V	47A (Ta), 303A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.2W (Ta), 134W (Tc)	0.7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
2SK4066-DL-1E	ON Semiconductor	MOSFET N-CH 60V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,192	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	220nC @ 10V	12500pF @ 20V	±20V	-	1.65W (Ta), 90W (Tc)	4.7 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS6B05NT1G	ON Semiconductor	MOSFET N-CH 100V 16A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,376	MOSFET (Metal Oxide)	100V	16A (Ta), 104A (Tc)	6V, 10V	4V @ 250µA	44nC @ 10V	3100pF @ 50V	±20V	-	3.3W (Ta), 138W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
2SK4066-1E	ON Semiconductor	MOSFET N-CH 60V 100A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,184	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	220nC @ 10V	12500pF @ 20V	±20V	-	1.65W (Ta), 90W (Tc)	4.7 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA